UTC-IC 2SC2235L-X-T9N-K

UNISONIC TECHNOLOGIES CO., LTD
2SC2235
NPN SILICON TRANSISTOR
AUDIO POWER AMPLIFIER
APPLICATIONS DRIVER STAGE
AMPLIFIER APPLICATIONS
„
FEATURES
* Complimentary to UTC 2SA965
Lead-free:
2SC2235L
Halogen-free: 2SC2235G
„
ORDERING INFORMATION
Ordering Number
Normal
Lead Free
Halogen Free
2SC2235-x-T9N-B 2SC2235L-x-T9N-B 2SC2235G-x-T9N-B
2SC2235-x-T9N-K 2SC2235L-x-T9N-K 2SC2235G-x-T9N-K
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
Package
TO-92NL
TO-92NL
Pin Assignment
1
2
3
E
C
B
E
C
B
Packing
Tape Box
Bulk
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2SC2235
„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
800
mA
Emitter Current
IE
-800
mA
Collector Power Dissipation
PC
900
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
„
SYMBOL
VBCEO
VBEBO
ICBO
IEBO
hFE
VCE(SAT)
VBE
fT
Cob
TEST CONDITIONS
IC =10mA, IB=0
IE=1mA, IC =0
VCB=120V, IE=0
VEB=5V, IC=0
VCE=5V, IC =100mA
IC =500mA, IB=50mA
VCE=5V, IC =500mA
VCE=5V, IC =100mA
VCB=10V, IE=0,f=1MHz
MIN
120
5
80
TYP MAX UNIT
V
V
100
nA
100
nA
240
1.0
V
1.0
V
120
MHz
30
pF
CLASSIFICATION OF hFE
RANK
RANGE
Y
120-240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
O
80-160
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TYPICAL CHARACTERISTICS
Collector Current vs. Collector Emitter
Voltage
4
400
3
2
IB=1mA
0
2
4
6
10
8
12
1000
500
Ta=100°C
Ta=25°C
Ta=-25°C
3
10
30
100
300
100
30
300
1000
Common Emitter
VCE=5V
600
Ta=100°C
Ta=25°C
Ta=-25°C
400
200
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current, Ic (mA)
Base Emitter Voltage, VBE (V)
Safe Operating Area
Collector Power Dissipaton vs. Ambient
Temperature
1000
Ic Max.(Pulse) *
1ms *
Ic Max. (Continous)
10ms *
s*
DC Operation
*Single Nonrepetitive Pulse Ta=25°C
Curve must be derated linearly with
increase in temperature
1
0.5 1
800
1000
10
5
3
10
Collector Current vs. Base Emitter
Voltage
0m
10
50
30
3
Collector Emitter Saturation Voltage vs.
Collector Current
300
100
Ta=-25°C
50
Collector Current, Ic (mA)
0.03
3000
Ta=25°C
Collector Emitter Voltage, VCE (V)
0.05
0.01
Ta=100°C
100
10
14
Common Emitter
0.3 Ic/IB =10
0.1
300
30
0
0.5
Collector Emitter Saturation
Voltage, VCE(SAT)
7
5
200
Common Emitter
VCE=5V
500
600
0
Collector Current, Ic (mA)
10
DC Current Gain, hFE
Common Emitter
Ta =25°C
15
800
DC Current Gain vs. Collector Current
1000
Collector Current, Ic (mA)
Collector Current, Ic (mA)
1000
3 5
10 30 50 100 300 5001000
Collector Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Power Dissipaton, Pc
(mW)
„
NPN SILICON TRANSISTOR
800
600
400
200
0
0
20
40
60
80
100 120 140 160
Ambient Temperature, Ta (°C)
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NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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