UNISONIC TECHNOLOGIES CO., LTD 8N90 Preliminary Power MOSFET 8 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N90 is an N-channel mode power MOSFET, using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 8N90 is generally applied in high efficiency switch mode power supplies. FEATURES * 8A, 900V, RDS(ON)=1.55Ω @ VGS=10V * Fast Switching Speed * 100% Avalanche Tested * Improved dv/dt Capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 8N90L-TA3-T 8N90G-TA3-T Note: G: GND, D: Drain, S: Source www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube 1 of 5 QW-R502-470.b 8N90 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 900 V Gate to Source Voltage VGSS ±30 V Continuous Drain Current (TC=25°C) ID 8 A Pulsed Drain Current (Note 1) IDM 25 A Avalanche Current (Note 1) IAR 6.3 A Single Pulsed Avalanche Energy (Note 2) EAS 850 mJ Repetitive Avalanche Energy (Note 1) EAR 17.1 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.0 V/ns Total Power Dissipation (TC=25°C) 147 W PD Linear Derating Factor above TC=25°C 1.17 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=40mH, IAS=6.3A, VDD= 50V, RG=25Ω, Starting TJ=25°C 3. ISD ≤8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 4. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL RATINGS θJA 62.5 θJC 0.85 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 900 Breakdown Voltage Temperature ΔBVDSS/ΔTJ ID=250μA, Referenced to 25°C Coefficient VDS=900V, VGS=0V Drain-Source Leakage Current IDSS VDS=720V, TC=125°C Gate-Source Leakage Current IGSS VDS=0V ,VGS=±30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4A Forward Transconductance (Note 1) gFS VDS=50V, ID=4A4 DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 1, Note 2) Total Gate Charge QG VDS=720V, VGS=10V, ID=8A Gate-Source Charge QGS Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=450V, ID=8A, RG=25Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =8A, VGS=0V Body Diode Reverse Recovery Time tRR VGS=0V, IS=8A, dIF/dt=100A/μs (Note 1) Body Diode Reverse Recovery Charge QRR Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT °C/W °C/W TYP MAX UNIT V 0.95 V/°C 10 100 ±100 µA µA nA 5.0 1550 V mΩ S 1600 2080 130 170 12 15 pF pF pF 35 10 14 40 110 70 70 nC nC nC ns ns ns ns 940 5.5 45 90 230 150 150 8 25 1.4 530 5.8 A A V ns μC 2 of 5 QW-R502-470.b 8N90 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-470.b 8N90 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Gate Charge Test Circuit Gate Charge Waveforms VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Unclamped Inductive Switching Waveforms Unclamped Inductive Switching Test Circuit 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time 4 of 5 QW-R502-470.b 8N90 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-470.b