UNISONIC TECHNOLOGIES CO., LTD 1N80 Power MOSFET 1A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 1N80 is universally applied in high efficiency switch mode power supply. FEATURES * RDS(on)=13.5Ω @VGS =10V * High switching speed * Improved dv/dt capability * 100% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 1N80L-TA3-T 1N80G-TA3-T 1N80L-TF3-T 1N80G-TF3-T 1N80L-TF1-T 1N80G-TF1-T 1N80L-TM3-T 1N80G-TM3-T 1N80L-TN3-T 1N80G-TN3-T 1N80L-TN3-R 1N80G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-251 TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel 1 of 6 QW-R502-491.E 1N80 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 1.0 A 1.0 A Continuous ID Drain Current Pulsed (Note 1) IDM 4.0 A 90 mJ Single Pulsed (Note 2) EAS Avalanche Energy Repetitive (Note 1) EAR 4.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.0 V/ns TO-220 39 Power Dissipation TO-220F/TO-220F1 PD 23 W TO-251/TO-252 27 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=170mH, IAS=1.0A, VDD= 50V, RG=25Ω, Starting TJ=25°C 3. ISD ≤1.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 4. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER TO-220/TO-220F/TO-220F1 Junction to Ambient TO-251/TO-252 TO-220 Junction to Case TO-220F/TO-220F1 TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 110 3.13 5.35 4.53 UNIT °C/W °C/W 2 of 6 QW-R502-491.E 1N80 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 800 Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C VDS=800V, VGS=0V Drain-Source Leakage Current IDSS VDS=640V, TC=125°C Forward VDS=0V ,VGS=30V Gate-Source Leakage Current IGSS Reverse VDS=0V ,VGS=-30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.5A Forward Transconductance gFS VDS=50V, ID=0.5A (Note 1) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=640V, VGS=10V, ID=1.0A Gate-Source Charge QGS (Note 1,2) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=400V, ID=1.0A, RG=25Ω (Note 1,2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =1.0A, VGS=0V Body Diode Reverse Recovery Time tRR VGS=0V, IS=1.0A, dIF/dt=100A/μs (Note 1) Body Diode Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT 10 100 100 -100 V V/°C µA µA nA nA 1.0 5.0 13.5 V Ω S 150 20 2.7 195 26 3.5 pF pF pF 5.5 1.1 3.3 10 25 15 25 7.2 nC nC nC ns ns ns ns 11 0.75 30 60 40 60 1.0 4.0 1.4 300 0.6 A A V ns μC 3 of 6 QW-R502-491.E 1N80 Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver ) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-491.E 1N80 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms esistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-491.E 1N80 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (A) Drain Current, ID (µA) Drain Current, ID (µA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-491.E