UNISONIC TECHNOLOGIES CO., LTD 1N80

UNISONIC TECHNOLOGIES CO., LTD
1N80
Power MOSFET
1A, 800V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 1N80 is an N-channel mode power MOSFET using UTC’s
advanced technology to provide costomers with planar stripe and
DMOS technology. This technology specializes in allowing a minimum
on-state resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation mode.
The UTC 1N80 is universally applied in high efficiency switch mode
power supply.
„
FEATURES
* RDS(on)=13.5Ω @VGS =10V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
„
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N80L-TA3-T
1N80G-TA3-T
1N80L-TF3-T
1N80G-TF3-T
1N80L-TF1-T
1N80G-TF1-T
1N80L-TM3-T
1N80G-TM3-T
1N80L-TN3-T
1N80G-TN3-T
1N80L-TN3-R
1N80G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
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QW-R502-491.E
1N80
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
800
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
1.0
A
1.0
A
Continuous
ID
Drain Current
Pulsed (Note 1)
IDM
4.0
A
90
mJ
Single Pulsed (Note 2)
EAS
Avalanche Energy
Repetitive (Note 1)
EAR
4.5
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.0
V/ns
TO-220
39
Power Dissipation
TO-220F/TO-220F1
PD
23
W
TO-251/TO-252
27
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=170mH, IAS=1.0A, VDD= 50V, RG=25Ω, Starting TJ=25°C
3. ISD ≤1.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
TO-220/TO-220F/TO-220F1
Junction to Ambient
TO-251/TO-252
TO-220
Junction to Case
TO-220F/TO-220F1
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
62.5
110
3.13
5.35
4.53
UNIT
°C/W
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
800
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C
VDS=800V, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=640V, TC=125°C
Forward
VDS=0V ,VGS=30V
Gate-Source Leakage Current
IGSS
Reverse
VDS=0V ,VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=0.5A
Forward Transconductance
gFS
VDS=50V, ID=0.5A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V,VGS=0V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=640V, VGS=10V, ID=1.0A
Gate-Source Charge
QGS
(Note 1,2)
Gate-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=400V, ID=1.0A, RG=25Ω
(Note 1,2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS =1.0A, VGS=0V
Body Diode Reverse Recovery Time
tRR
VGS=0V, IS=1.0A,
dIF/dt=100A/μs (Note 1)
Body Diode Reverse Recovery Charge
QRR
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP
MAX
UNIT
10
100
100
-100
V
V/°C
µA
µA
nA
nA
1.0
5.0
13.5
V
Ω
S
150
20
2.7
195
26
3.5
pF
pF
pF
5.5
1.1
3.3
10
25
15
25
7.2
nC
nC
nC
ns
ns
ns
ns
11
0.75
30
60
40
60
1.0
4.0
1.4
300
0.6
A
A
V
ns
μC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
VGS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-491.E
1N80
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
esistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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QW-R502-491.E
1N80
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (A)
Drain Current, ID (A)
Drain Current, ID (µA)
Drain Current, ID (µA)
„
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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