UNISONIC TECHNOLOGIES CO., LTD 90N02 Preliminary Power MOSFET 90A, 20V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 90N02 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, superior switching performance and low gate charge. The UTC 90N02 is suitable for switching regulators, DC linear mode control, automotive systems, solenoid & motor control, etc. 1 TO-251 FEATURES * RDS(ON)= 7mΩ @ VGS=10V, ID=90A * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 90N02L-TM3-T 90N02G-TM3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-251 Pin Assignment 1 2 3 G D S Packing Tube 1 of 3 QW-R502-751.a 90N02 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (Note 2) VDSS 20 V Gate-Source Voltage VGSS ±20 V ID 90 A Continuous (TC<135°C, VGS=10V) Drain Current Pulsed IDM 360 A Single Pulsed Avalanche Energy (Note 3) EAS 168 mJ Power Dissipation PD 54 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Starting TJ=25~150°C 3. Starting TJ=25°C , L = 0.42mH, IAS = 90A THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.5 2.3 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=20V, VGS=0V Forward VGS=+20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=90A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=20V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge at 20V QG Gate to Source Charge QGS VDD=20V, ID=90A, RL=0.4Ω Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=20V, ID=90A, RL=0.4Ω, VGS=10V, RGS=2.5 Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD ISD=90A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 20 0.9 V 1 µA +100 nA -100 nA 2.8 5.1 2.5 7 3565 1310 395 V mΩ pF pF pF 46 6.9 9.8 9 106 53 41 60 nC nC nC ns ns ns ns 0.9 1.25 V 2 of 3 QW-R502-751.a 90N02 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-751.a