UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET 3 DESCRIPTION 1 2 The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed. SOT-23 (SC-59) FEATURES * RDS(ON)=700Ω @ VGS=0V,ID=3mA * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF601L-AE3-R UF601G-AE3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel 1 of 3 QW-R502-699.C UF601 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (Note 2) VDSS 600 V Drain-Gate Voltage (Note 2) VDGX 600 V Gate-Source Voltage VGSS ±20 V 0.185 A Continuous ID Drain Current Pulsed IDM 0.740 A Power Dissipation PD 0.50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. TJ=+25°C~+150°C THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA RATINGS 250 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=-5V Drain-Source Leakage Current ID(OFF) VDS=600V, VGS=-5V Forward VGS=+20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=3V, ID=8µA Drain-Source Leakage Current IDSS VDS=25V, VGS=0V Static Drain-Source On-State Resistance RDS(ON) VGS=0V, ID=3mA DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, Output Capacitance COSS f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=-5~5V, VDS=30V, Gate to Source Charge QGS ID=5mA Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VGS=-5~5V, VDD=30V, ID=5mA, RG=20Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD ISD=3.0mA, VGS=-10V Notes: 1. Repetitive rating, pulse width limited by maximum junction temperature. 2. Pulse width≤380μs; duty cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 600 0.1 +100 -100 -2.7 7.0 -1.5 600 700 V μA nA nA V mA Ω 9.44 2.28 1.42 pF pF pF 1.29 0.1 0.47 4 9 14 84 nC nC nC ns ns ns ns 1.4 V 2 of 3 QW-R502-699.C UF601 Power MOSFET TYPICAL CHARACTERISTICS TR TF VDD=30V ,ID=5mA, RG=20Ω VDD=30V ,ID=5mA, RG=20Ω 10V /5V 0 10V /5V 0 -10V /-5V -10V /-5V 0 200 Time (40ns/div) 400 0 1000 Time (200ns/div) 2000 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-699.C