UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR * * * * FEATURES Collector-Emitter Voltage: BVCEO=50V Collector Current up to 150mA High hFE Linearity Complement to MMBT1015 ORDERING INFORMATION Ordering Number Lead Free Halogen Free MMBT1815L-x-AC3-R MMBT1815G-x-AC3-R MMBT1815L-x-AE3-R MMBT1815G-x-AE3-R MMBT1815L-x-AL3-R MMBT1815G-x-AL3-R MMBT1815L-x-AN3-R MMBT1815G-x-AN3-R MMBT1815L-x-AQ3-R MMBT1815G-x-AQ3-R www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package SOT-113 SOT-23 SOT-323 SOT-523 SOT-723 Pin Assignment 1 2 3 E B C E B C E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel 1 of 5 QW-R206-014,K MMBT1815 NPN SILICON TRANSISTOR MARKING PACKAGE MARKING GR Y SOT-23 C4Y C4G L: Lead Free G: Halogen Free SOT-113 SOT-323 SOT-523 C4 L: Lead Free G: Halogen Free SOT-723 C L: Lead Free G: Halogen Free UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw BL C4B L: Lead Free G: Halogen Free L: Lead Free G: Halogen Free 2 of 5 QW-R206-014,K MMBT1815 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING ( TA=25°C , unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SOT-23 Collector Dissipation SOT-523/SOT-113/SOT-323 (TA=25°C) SOT-723 Collector Current Base Current SYMBOL VCBO VCEO VEBO RATINGS 60 50 5 250 200 190 150 50 PC IC IB UNIT V V V mW mA mA Junction Temperature TJ 150 °С Storage Temperature TSTG -55 ~ +150 °С Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Transition Frequency Output Capacitance Noise Figure SYMBOL BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) ICBO IEBO hFE1 hFE2 fT COB NF TEST CONDITIONS IC = 100μA, IE = 0 IC = 10mA, IB = 0 IE = 10μA, IC = 0 IC = 100mA, IB = 10mA IC = 100mA, IB = 10mA VCB = 60V, IE = 0 VEB = 5V, IC = 0 VCE = 6V, IC = 2mA VCE = 6V, IC = 150mA VCE = 10V,Ic = 50mA VCB = 10V, IE = 0, f = 1MHz IC = 0.1mA, VCE = 6V RG = 10kΩ, f = 100Hz MIN 50 50 5 TYP 0.1 120 25 80 MAX UNIT V V V 0.25 V 1.0 V 100 nA 100 nA 700 2.0 3.0 MHz pF 1.0 1.0 dB CLASSIFICATION OF hFE1 RANK RANGE Y 120-240 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw GR 200-400 BL 350-700 3 of 5 QW-R206-014,K MMBT1815 TYPICAL CHARACTERISTICS Current Gain-Bandwidth Product Collector Output Capacitance 3 10 10 V CE =6V Capacitance, Cob (pF) Current Gain-bandwidth product,fT (MHz) NPN SILICON TRANSISTOR 2 10 1 10 0 10 10 10 2 f=1MHz IE =0 1 0 -1 10 -1 10 0 10 1 10 Collector Current, Ic (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 10 0 10 1 10 2 10 3 10 Collector-Base Voltage (V) 4 of 5 QW-R206-014,K MMBT1815 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R206-014,K