UTC-IC MMBTA44

UNISONIC TECHNOLOGIES CO., LTD
MMBTA44/45
NPN SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTORS
„
FEATURES
*Collector-Emitter voltage: VCEO=400V (UTC MMBTA44)
VCEO=350V (UTC MMBTA45)
*Collector current up to 300mA
*Complement to UTC MMBTA94/93
*Power Dissipation: PD(max)=350mW
Lead-free:
MMBTA44L/MMBTA45L
Halogen-free: MMBTA44G/MMBTA45G
„
ORDERING INFORMATION
Normal
MMBTA44-AE3-R
MMBTA45-AE3-R
„
Ordering Number
Lead Free Plating
MMBTA44L-AE3-R
MMBTA45L-AE3-R
Halogen Free
MMBTA44G-AE3-R
MMBTA45G-AE3-R
Package
SOT-23
SOT-23
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
MARKINGS
MMBTA45
MMBTA44
3D
L: Lead Free
G: Halogen Free
35
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd.
L: Lead Free
G: Halogen Free
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„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
500
V
Collector-Base Voltage
VCBO
400
V
400
V
Collector-Emitter Voltage
VCEO
350
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
300
mA
Ta=25°C
350
mW
Power Dissipation
PD
TC=25°C
1.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
MMBTA44
MMBTA45
MMBTA44
MMBTA45
„
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown
MMBTA44
Voltage
MMBTA45
Collector-Emitter Breakdown MMBTA44
Voltage
MMBTA45
Emitter-Base Breakdown Voltage
SYMBOL
BVCBO
IC=100μA, IB=0
BVCEO
IC =1mA, IB=0
BVEBO
IE=100μA, IC =0
IC =1mA, IB=0.1mA
IC =10mA, IB=1mA
IC =50mA, IB=5mA
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
MMBTA44
Collector Cut-off Current
MMBTA45
MMBTA44
Collector Cut-off Current
MMBTA45
Emitter Cut-off Current
VBE(SAT)
DC Current Gain (Note)
Current Gain Bandwidth Product
Output Capacitance
Note: Pulse test: PW<300μs, Duty Cycle<2%
ICBO
ICES
IEBO
hFE1
hFE2
hFE3
hFE4
fT
Cob
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
IC 10mA, IB=1mA
VCB=400V, IE =0
VCB=320V, IE =0
VCE =400V, IB=0
VCE =320V, IB=0
VEB=4V, IC =0
VCE =10V, IC =1mA
VCE =10V, IC =10mA
VCE =10V, IC =50mA
VCE =10V, IC =100mA
VCE =20V, IC =10mA
f=100MHz
VCB=20V, IE =0, f=1MHz
MIN
500
400
400
350
6
40
50
45
40
TYP
MAX
0.4
0.5
0.75
UNIT
V
V
V
V
V
V
V
V
0.75
0.1
0.1
0.5
0.5
0.1
V
μA
μA
μA
μA
μA
240
50
MHz
7
pF
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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„
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(cont.)
High Frequency Current Gain
1
2
10
3
C
1
5°
0
10
10
10
Collector Current, IC (mA)
=2
-1
10
10 2
0.1ms
C
-1
1s
Ta
10
1ms
10 3
5°
10 0
Valid Duty
Cycle <10 %
=2
Collector Current, IC (mA)
10
10 4
VCE =10 V
f =10 MHz
Ta =25°C
Ta
Small Signal Current Gain, hFE
10 2
Safe Operating Area
10
10
1
MPSA 44
0
10
0
1
2
10
10
10
Collector Voltage(V)
3
10
4
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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