UTC-IC 2SB1151

UNISONIC TECHNOLOGIES CO., LTD
2SB1151
PNP SILICON TRANSISTOR
LOW COLLECTOR
SATURATION VOLTAGE
LARGE CURRENT
„
FEATURES
*High Power Dissipation
*Complementary to 2SD1691
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SB1151L-x-AA3-R
2SB1151G-x-AA3-R
2SB1151L-x-T60-K
2SB1151G-x-T60-K
2SB1151L-x-TN3-R
2SB1151G-x-TN3-R
2SB1511L-x-AA3-R
Package
SOT-223
TO-126
TO-252
Pin Assignment
1
2
3
E
C
B
E
C
B
B
C
E
Packing
Tape Reel
Bulk
Tape Reel
(1) K: Bulk, R: Tape Reel
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Free
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
(2) AA3: SOT-223, T60: TO-126, TN3: TO-252
(3) x: refer to Classification of hFE2
(4) G: Halogen Free, L: Lead Free
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2SB1151
„
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
RATINGS
UNIT
-60
V
-60
V
-7
V
DC
-5
A
Collector Current
Pulse(Note 2)
-8
A
Base Current
-1
A
SOT-223
1
W
PD
TO-126
1.5
W
Power Dissipation (Ta=25°C)
2
W
TO-252
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.PW≤10ms, Duty Cycle≤50%
„
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Switching Time
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
VBE(SAT)
hFE 1
hFE 2
hFE 3
TEST CONDITIONS
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-100uA, Ic=0
VCB=-50V, IE=0
VEB=-7V, IC=0
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-1V, IC=-0.1A
VCE=-1V, IC=-2A
VCE=-2V, IC=-5A
MIN
-60
-60
-7
TYP MAX UNIT
V
V
V
-10
µA
-10
µA
-0.14 -0.3
V
-0.9 -1.2
V
60
160
50
400
Turn On Time
tON
0.15
1
µS
Storage Time
tSTG
0.78
2.5
µS
tF
0.18
1
µS
Fall Time
Pulse test : PW≤350 µS, Duty Cycle≤2% Pulse
„
CLASSIFICATION OF hFE2
RANK
RANGE
O
160 ~ 320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Y
200 ~ 400
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DC Current Gain, hFE
Collector Current, IC(A)
VCEO( MAX)
d
0m
A
ite
-20
m
IB =
IC Derating, dT (%)
n
Li
Power Dissipation, PD (W)
tio
www.unisonic.com.tw
pa
d
ite
m
Li
n ted
tio m i
pa Li
si /b
S
UNISONIC TECHNOLOGIES CO., LTD
si
is
2m
10 s*
ms
20
*
0m
s
D
is
Collector Current, IC(A)
„
D
Collector Current, IC(A)
2SB1151
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
QW-R204-022.C
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2SB1151
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Staturation Voltage, VBE(SAT), VCE(SAT) (V)
„
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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