UNISONIC TECHNOLOGIES CO., LTD MMDT3904 Preliminary NPN EPITAXIAL SILICON TRANSISTOR DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DESCRIPTION The UTC MMDT3904 is a dual NPN small signal surface mount transistor. FEATURES * Suitable for Low Power Amplification and Switching * Epitaxial Planar Die Construction * Extremely-Small Surface Mount Package ORDERING INFORMATION Ordering Number Lead Free Halogen Free MMDT3904L-AL6-R MMDT3904G-AL6-R MMDT3904L-AL6-R Package Packing SOT-363 Tape Reel (1)Packing Type (1) R: Tape Reel (2)Package Type (2) TL6: SOT-363 (3)Lead Free (3) Halogen Free, L: Lead Free MARKING PIN CONFIGURATION www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 3 QW-R218-013.a MMDT3904 Preliminary NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous IC 200 mA Power Dissipation PD 200 mW Thermal Resistance, Junction to Ambient θJA 625 ℃/W Junction Temperature TJ -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS (Note 1) Collector-Base Breakdown Voltage V(BR)CBO IC = 10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO IE = 10μA, IC = 0 Collector Cut-off Current ICEX VCE = 30V, VEB(OFF) = 3.0V Base Cut-off Current IBL VCE = 30V, VEB(OFF) = 3.0V ON CHARACTERISTICS (Note 1) IC = 100μA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V DC Current Gain hFE IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA Collector-Emitter Saturation Voltage VCE(sat) IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA Base- Emitter Saturation Voltage VBE(sat) IC = 50mA, IB = 5.0mA SMALL SIGNAL CHARACTERISTICS Output Capacitance COBO VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance CIBO VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hIE VCE = 10V, IC = 1.0mA, Voltage Feedback Ratio HRE f = 1.0kHz Small Signal Current Gain HFE Output Admittance HOE VCE = 20V, IC = 10mA, Current Gain-Bandwidth Product fT f = 100MHz VCE = 5.0V, IC = 100μA, Noise Figure NF RS = 1.0kΩ, f = 1.0kHz SWITCHING CHARACTERISTICS VCC = 3.0V, IC = 10mA, Delay Time TD VBE(off) = - 0.5V, IB1 = 1.0mA Rise Time TR Storage Time TS VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA Fall Time TF Note: 1. Short duration test pulse used to minimize self-heating. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 50 50 V V V nA nA 60 40 5.0 40 70 100 60 30 0.65 1.0 0.5 100 1.0 300 0.20 0.30 0.85 0.95 V V V V 4.0 8.0 10 8.0 400 40 pF pF KΩ -4 ×10 300 μS MHz 5.0 dB 35 35 ns ns 200 ns 50 ns 2 of 3 QW-R218-013.a MMDT3904 Preliminary NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R218-013.a