UTC-IC S486

UNISONIC TECHNOLOGIES CO., LTD
S486
CMOS IC
DUAL 100mW AUDIO POWER
AMPLIFIER WITH STANDBY
MODE
„
DESCRIPTION
The UTC S486 is a dual power amplifier capable of delivering
typically 100mW per channel of continuous average power to an
8Ω load with 0.1% THD+N using a 5V power supply.
The UTC S486 features an externally controlled, low-power
consumption stand by mode. The UTC S486 exhibit a low
quiescent current of typically 1.8mA, allowing usage in portable
applications.
The unity-gain stable UTC S486 can be configured by external
gain-setting resistors.
„
FEATURES
* Operating voltage range VCC=2V ~ 5.5V
* Output power:
- 102mW @5V into 16Ω with 0.1% THD+N max (1kHz)
* Stand by mode available
* Low current consumption: 2.5mA max
* Click and pop reduction circuitry
* Unity-gain stable
* Short circuit protected
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
S486L-S08-R
S486G-S08-R
Package
Packing
SOP-8
Tape Reel
S486L-S08-R
(1)Packing Type
(2)Package Type
(3)Lead Plating
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Copyright © 2011 Unisonic Technologies Co., Ltd
(1) R: Tape Reel
(2) S08: SOP-8
(3) G: Halogen Free, L: Lead Free
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„
CMOS IC
PIN CONFIGURATION
OUT (1)
1
8
VCC
VIN (1)
2
7
OUT (2)
BYPASS
3
6
VIN (2)
GND
4
5
SHUTDOWN
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„
CMOS IC
ABSOLUTE MAXIMUM RATING (Ta=25°С)
PARAMETER
SYMBOL
RATINGS
UNIT
Supply voltage (Note 2)
VCC
6
V
Input Voltage
VIN
-0.3V ~ VCC+0.3V
V
Output Short Circuit to VCC or GND
Continuous(Note 3)
Power Dissipation (TJ=150°С)
PD
0.71
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-40 ~ +85
°С
Storage Temperature
TSTG
-65 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. All voltage values are measured with respect to the ground pin.
3. Attention must be paid to continuous power dissipation (VDD x 300mA). Exposure of the IC to a short circuit
for an extended time period is dramatically reducing product life expectancy.
„
THERMAL DATA
PARAMETER
Junction to Ambient
„
SYMBOL
θJA
RATINGS
175
UNIT
°С/W
RECOMMENDED OPERATING CONDITIONS
PARAMETER
RATINGS
2 ~ 5.5
ACTIVE
1.5≤VSTB≤VCC
Standby Voltage Input
VSTB
STANDBY
GND≤VSTB≤0.4(Note)
Load Resistor
RL
≥16
RL = 16 ~ 100Ω
400
Load Capacitor
CL
RL > 100Ω
100
Junction to Ambient
θJA
150
Note: The minimum current consumption (ISTB) is guaranteed at GND for the whole temperature range.
Supply Voltage
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SYMBOL
VCC
UNIT
V
V
V
Ω
pF
pF
℃/W
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CMOS IC
ELECTRICAL CHARACTERISTICS (Ta = 25°С, GND = 0V, unless otherwise specified)
For VCC = +5V
PARAMETER
SYMBOL
TEST CONDITIONS
VOL : RL = 32Ω
VOH : RL = 32Ω
Output Swing
VOUT
VOL : RL = 16Ω
VOH : RL = 16Ω
Input Offset Voltage
VI(OFF) VICM = VCC/2
Supply Current
ICC
No input signal, no load
Stand By Current
ISTB
No input signal, VSTB=GND, RL=32Ω
Input Bias Current
II(BIAS) VICM = VCC/2
THD+N≤1%,
Max Output Current
IOUT
RL=16Ω connected between out and VCC/2
RL = 16Ω
THD+N = 0.1% Max, F= 1kHz
RL = 32Ω
Output Power
POUT
RL = 16Ω
THD+N = 1% Max, F= 1kHz
RL = 32Ω
RL = 32Ω, POUT= 60mW, 20Hz≤F≤20kHz
Total Harmonic Distortion +
THD+N
RL = 16Ω, POUT= 90mW, 20Hz≤F≤20kHz
Noise (Gv=-1)
inputs grounded(GV=-1)(Note), RL≧16Ω,
Power Supply Rejection Ratio
PSRR
CB=1mF, F = 1kHz, VRIPPLE = 200mVPP
(A weighted, GV=-1)(Note), RL = 32Ω,
Signal-to-Noise Ratio
SNR
THD +N < 0.4%, 20Hz≤F≤20kHz
Channel Separation,
RL = 16Ω
GV=-1, F = 1kHz
RL = 32Ω
Crosstalk
CT
RL = 16Ω
Channel Separation,
GV=-1, F = 20Hz ~ 20kHz
RL = 32Ω
Input Capacitance
CIN
Gain Bandwidth Product
GBW RL = 32Ω
Slew Rate
SR
Unity Gain Inverting(RL = 16Ω)
Note: Guaranteed by design and evaluation.
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MIN
4.45
4.2
TYP
0.45
4.52
0.6
4.35
1
1.8
10
90
106
115
95
60
102
64
108
65
0.3
0.3
MAX
0.5
UNIT
V
0.7
2.5
1000
200
mV
mA
nA
nA
mA
mW
%
53
58
dB
80
103
dB
80
83
72
79
1
1.1
0.4
dB
pF
MHz
V/µs
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CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.) (Ta = 25°С, GND = 0V, unless otherwise specified)
For VCC = +3.3V
PARAMETER
SYMBOL
TEST CONDITIONS
VOL : RL = 32Ω
MIN
VOH : RL = 32Ω
2.85
VOL : RL = 16Ω
VOH : RL = 16Ω
2.68
Input Offset Voltage
VI(OFF) VICM = VCC/2
Supply Current
ICC
No input signal, no load
Stand By Current
ISTB
No input signal, VSTB=GND, RL=32Ω
Input Bias Current
II(BIAS) VICM = VCC/2
THD +N≤1%,
64
Max Output Current
IOUT
RL = 16Ω connected between out and VCC/2
RL = 16Ω
THD+N = 0.1% Max, F= 1kHz
RL = 32Ω
Output Power
POUT
RL = 16Ω
36
THD+N = 1% Max, F= 1kHz
RL = 32Ω
23
RL = 32Ω, POUT= 60mW, 20Hz≤F≤20kHz
Total Harmonic Distortion +
THD+N
RL = 16Ω, POUT= 90mW, 20Hz≤F≤20kHz
Noise (Gv=-1)
inputs grounded (GV=-1)(Note 2), RL≧16Ω,
53
Power Supply Rejection Ratio
PSRR
CB=1mF, F = 1kHz, VRIPPLE = 200mVPP
(A weighted, GV=-1)(Note 2), RL = 32Ω,
Signal-to-Noise Ratio
SNR
80
THD +N < 0.4%, 20Hz≤F≤20kHz
Channel Separation,
RL = 16Ω
GV=-1, F = 1kHz
RL = 32Ω
Crosstalk
CT
Channel Separation,
RL = 16Ω
GV=-1, F = 20Hz ~ 20kHz
RL = 32Ω
Input Capacitance
CIN
Gain Bandwidth Product
GBw RL = 32Ω
Slew Rate
SR
Unity Gain Inverting( RL = 16Ω)
Note 1. All electrical values are guaranteed with correlation measurements at 2V and 5V.
2. Guaranteed by design and evaluation.
Output Swing
VOUT
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TYP
0.3
3
0.45
2.85
1
1.8
10
90
75
38
26
42
28
0.3
0.3
MAX
0.38
0.52
2.5
1000
200
UNIT
V
mV
mA
nA
nA
mA
mW
%
58
dB
98
dB
77
80
69
76
1
1.1
0.4
dB
pF
MHz
V/µs
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CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.) (Ta = 25°С, GND = 0V, unless otherwise specified)
For VCC = +2.5V
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
VOL : RL = 32Ω
VOH : RL = 32Ω
2.14
Output Swing
VOUT
VOL : RL = 16Ω
VOH : RL = 16Ω
1.97
Input Offset Voltage
VI(OFF) VICM = VCC/2
Supply Current
ICC
No input signal, no load
Stand By Current
ISTB
No input signal, VSTB=GND, RL=32Ω
Input Bias Current
II(BIAS) VICM = VCC/2
THD +N≤1%,
45
Max Output Current
IOUT
RL = 16Ω connected between out and VCC/2
RL = 16Ω
THD+N = 0.1% Max, F= 1kHz
RL = 32Ω
Output Power
POUT
RL = 16Ω 17.5
THD+N = 1% Max, F= 1kHz
RL = 32Ω 12.5
RL = 32Ω,POUT = 60mW, 20Hz≤F≤20kHz
Total Harmonic Distortion +
THD+N
RL = 16Ω, POUT = 90mW, 20Hz≤F≤20kHz
Noise (Gv=-1)
inputs grounded(GV=-1)(Note 2), RL≧16Ω,
53
Power Supply Rejection Ratio
PSRR
CB=1mF, F = 1kHz, VRIPPLE = 200mVPP
(A weighted, AV=-1)(Note 2), RL = 32Ω,
Signal-to-Noise Ratio
SNR
80
THD +N < 0.4%, 20Hz≤F≤20kHz
Channel Separation,
RL = 16Ω
GV=-1, F = 1kHz
RL = 32Ω
Crosstalk
CT
RL = 16Ω
Channel Separation,
GV=-1, F = 20Hz ~ 20kHz
RL = 32Ω
Input Capacitance
CIN
Gain Bandwidth Product
GBP RL = 32Ω
Slew Rate
SR
Unity Gain Inverting (RL = 16Ω)
Note 1. All electrical values are guaranteed with correlation measurements at 2V and 5V.
2. Guaranteed by design and evaluation.
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TYP
0.25
2.25
0.35
2.15
1
1.7
10
90
56
21
13
22
14
0.3
0.3
MAX
0.32
0.45
2.5
1000
200
UNIT
V
mV
mA
nA
nA
mA
mW
%
58
dB
95
dB
77
80
69
76
1
1.1
0.4
dB
pF
MHz
V/µs
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CMOS IC
ELECTRICAL CHARACTERIST(Cont.) (Ta = 25°С, GND = 0V, unless otherwise specified)
For VCC = +2V
PARAMETER
SYMBOL
TEST CONDITIONS
VOL : RL = 32Ω
VOH : RL = 32Ω
Output Swing
VOUT
VOL : RL = 16Ω
VOH : RL = 16Ω
Input Offset Voltage
VI(OFF) VICM = VCC/2
Supply Current
ICC
No input signal, no load
Stand By Current
ISTB
No input signal, VSTB=GND, RL=32Ω
Input Bias Current
II(BIAS) VICM = VCC/2
THD +N≤1%,
Max Output Current
IOUT
RL=16Ω connected between out and VCC/2
RL = 16Ω
THD+N = 0.1% Max, F= 1kHz
RL = 32Ω
Output Power
POUT
RL = 16Ω
THD+N = 1% Max, F= 1kHz
RL = 32Ω
RL = 32Ω, POUT= 60mW, 20Hz≤F≤20kHz
Total Harmonic Distortion +
THD+N
RL = 16Ω, POUT= 90mW, 20Hz≤F≤20kHz
Noise (Gv=-1)
inputs grounded (GV=-1)(Note) ,RL≧16Ω,
Power Supply Rejection Ratio
PSRR
CB=1mF, F = 1kHz, VRIPPLE = 200mVPP
(A weighted, GV=-1)(Note), RL = 32Ω,
Signal-to-Noise Ratio
SNR
THD +N < 0.4%, 20Hz≤F≤20kHz
Channel Separation,
RL = 16Ω
GV=-1, F = 1kHz
RL = 32Ω
Crosstalk
CT
RL = 16Ω
Channel Separation,
GV=-1, F = 20Hz ~ 20kHz
RL = 32Ω
Input Capacitance
CIN
Gain Bandwidth Product
GBP RL = 32Ω
Slew Rate
SR
Unity Gain Inverting (RL = 16Ω)
Note: Guaranteed by design and evaluation.
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MIN
1.67
1.53
TYP
0.24
1.73
0.33
1.63
1
1.7
10
90
33
41
9.5
7
12
8
13
9
0.3
0.3
MAX
0.29
0.41
2.5
1000
200
UNIT
V
mV
mA
nA
nA
mA
mW
%
52
57
dB
80
93
dB
77
80
69
76
1
1.1
0.4
dB
pF
MHz
V/µs
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„
CMOS IC
TYPICAL APPLICATION CIRCUIT
VCC
Stdby level
threshold=0.9V
RFEED1
Stdby ctrl
20K
Right In
CIN1
330nF
20K
2
CB
330nF
Left In
CIN2
8
VCC
1
5 Stdby
RIN1
3
220µF
COUT1
BIAS
UTC S486=Stdby
1µF
RIN2
CS
1µF
7
6
20K
GND
4
ZL=32 Ω
1K
COUT2
220µF
ZL=32 Ω
1K
20K
RFEED2
COMPONENTS INFORMATION
Components
RIN1, 2
CIN1, 2
RFEED1, 2
CS
CB
COUT1, 2
Functional Description
Inverting input resistor which sets the closed loop gain in conjunction with RFEED. This resistor
also forms a high pass filter with CIN (fc = 1 / (2 xπx RIN x CIN) .
Input coupling capacitor which blocks the DC voltage at the amplifier’s input terminal.
Feedback resistor which sets the closed loop gain in conjunction with RIN.
AV= Closed Loop Gain= -RFEED/RIN.
Supply Bypass capacitor which provides power supply filtering.
Bypass capacitor which provides half supply filtering.
Output coupling capacitor which blocks the DC voltage at the load input terminal.
This capacitor also forms a high pass filter with RL (fc = 1 / (2 xπx RL x COUT)).
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THD + N (%)
THD + N (%)
THD + N (%)
THD + N (%)
TYPICAL CHARACTERISTICS
THD + N (%)
THD + N (%)
„
CMOS IC
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TYPICAL CHARACTERISTICS(Cont.)
Gain (dB)
60
0
40
-20
20
0
-40
0.1
1
10
100 1000
Frequency (kHz)
Open Loop Gain and Phase vs
Frequency
VCC=5V
RL=600Ω
Ta=25°С
80
60
180
160
140
120
Gain
40
100
20
80
Phase
60
0
40
-20
20
0
-40
0.1
1
10
100 1000
Frequency (kHz)
3.0
3.5 4.0
VCC(V)
4.5
5.0
80
Phase
60
0
40
-20
20
0
1
10
100 1000
Frequency (kHz)
-20
10000
Output Power vs Power Supply
Voltage
200
RL = 16Ω
175 F = 1kHz
BW < 125kHz
150 Ta = 25°С
THD+N=1%
125
100
THD+N=10%
75
50
0
Power Dissipation (mW)
5.5
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20
THD+N=0.1%
2.0 2.5
3.0
3.5 4.0
VCC(V)
4.5
5.0
5.5
VCC=5V
THD+N=0.1%
0
2.0 2.5
100
80 F=1kHz
THD+N=10%
25
40
Power Dissipation vs Output Power
75
50
140
25
-20
10000
Output Power vs Power Supply
Voltage
RL = 32Ω
F = 1kHz
100 BW < 125kHz
Ta = 25°С
THD+N=1%
160
120
-40
0.1
-20
10000
180
Phase (Deg)
80
Phase
60
Gain (dB)
100
20
Gain (dB)
140
Output Power (mW)
40
160
120
Gain
80
Phase (Deg)
60
Open Loop Gain and Phase vs
Frequency
VCC=5V
RL=32Ω
Ta=25°С
Gain
180
Phase (Deg)
Open Loop Gain and Phase vs
Frequency
VCC=5V
RL=16Ω
Ta=25°С
80
Output Power (mW)
„
CMOS IC
THD+N<1%
60
RL=16Ω
40
RL=32Ω
20
0
0
20
40
60
80
100
Output Power (mW)
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TYPICAL CHARACTERISTICS(Cont.)
Power Derating vs Ambiant
Temperature
Power Dissipation vs Output Power
1.0
VCC=2V
F=1kHz
THD+N<1%
0.9
10
Power Dissipation (W)
Power Dissipation (mW)
15
RL=16Ω
5
RL=32Ω
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
6
8
10
4
Output Power (mW)
2
0.0
0
12
1.5
Ta=25°С
Ta=-40°С
1.0
0.5
0.0
5.0
4.5
No load
0
1
2
3
VCC (V)
50
75
100
125
150
Current Consumption vs Standby
Voltage
2.0
Ta=85°С
Current Consumption (mA)
Current Consumption (mA)
2.0
25
Ambiant Temperature (°С)
Current Consumption vs Power Supply
Voltage
4
5
1.5
Ta=85°С
Ta=25°С
1.0
Ta=-40°С
0.5
0.0
VCC = 5V
No load
0
1
2
3
4
Standby Voltage (V)
5
Output Voltage Swing vs Power
Supply Voltage
Ta=25°С
4.0
VOH & VOL (V)
„
CMOS IC
3.5
3.0
2.5
RL=32Ω
2.0
RL=16Ω
1.5
1.0
0.5
0.0
2.0
2.5
3.0
3.5
4.0
VCC (V)
4.5
5.0
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CMOS IC
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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