UNISONIC TECHNOLOGIES CO., LTD UF520 Preliminary Power MOSFET 9.2A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF520 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with high Input Impedance and high switching speed. This UTC UF520 is suitable for motor drivers, switching convertors, switching regulators, relay drivers and drivers for high power bipolar switching transistors. FEATURES * RDS(ON)=0.25Ω @ VGS=10V,ID=5.6A * High Input Impedance * High Switching Speed SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF520L-TA3-T UF520G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube 1 of 6 QW-R502-659.a UF520 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 100 V ±20 V TC=25°C 9.2 A ID Continuous Drain Current TC=100°C 6.5 A Pulsed (Note 2) IDM 37 A Single Pulsed Avalanche Energy (Note 3) EAS 36 mJ Power Dissipation PD 50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve 3. VDD=25V, starting TJ=25°C, L=640mH, RG=25Ω, peak IAS=9.2A SYMBOL VDSS VGSS THERMAL DATA PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 80 2.5 UNIT °C/W °C/W 2 of 6 QW-R502-659.a UF520 Preliminary ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=95V, VGS=0V Gate- Source Leakage Current IGSS VGS=±20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5.6A (Note 1) On State Drain Current (Note 1) ID(ON) VGS=10V, VDS>ID(ON)×RDS(ON)MAX DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, ID=9.2A, VDS=0.8*Rated Gate to Source Charge QGS BVDSS, IG(REF)=1.5mA (Note 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=50V, ID≈9.2A, RG=18Ω, RL=5.5 Ω (Note 3) Turn-OFF Delay Time tD(OFF) Fall-Time tF Notes: 1. Pulse test: pulse width≤300µs, duty cycle≤2% 2. Gate Charge is Essentially Independent of Operating Temperature 3. MOSFET Switching Times are Essentially Independent of Operating Temperature Power MOSFET MIN TYP MAX UNIT 100 2.0 V 250 µA ±100 nA 4.0 0.25 0.27 V Ω A 350 130 25 pF pF pF 9.2 10 2.5 2.5 9 30 18 20 30 13 63 70 59 nC nC nC ns ns ns ns SOURCE TO DRAIN DIODE SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Source to Drain Diode Voltage VSD TJ=25°C,ISD=9.2A,VGS=0V (Note 1) 2.5 V Continuous Source to Drain Current ISD 9.2 A Note 3 Pulse Source to Drain Current (Note 2) ISDM 37 A Note : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve 3. Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-659.a UF520 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-659.a UF520 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-659.a UF520 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-659.a