UTC-IC UF520

UNISONIC TECHNOLOGIES CO., LTD
UF520
Preliminary
Power MOSFET
9.2A, 100V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC UF520 is an N-channel enhancement power MOSFET
using UTC’s advanced technology to provide the customers with
high Input Impedance and high switching speed.
This UTC UF520 is suitable for motor drivers, switching
convertors, switching regulators, relay drivers and drivers for high
power bipolar switching transistors.
„
FEATURES
* RDS(ON)=0.25Ω @ VGS=10V,ID=5.6A
* High Input Impedance
* High Switching Speed
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF520L-TA3-T
UF520G-TA3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
100
V
±20
V
TC=25°C
9.2
A
ID
Continuous
Drain Current
TC=100°C
6.5
A
Pulsed (Note 2)
IDM
37
A
Single Pulsed Avalanche Energy (Note 3)
EAS
36
mJ
Power Dissipation
PD
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve
3. VDD=25V, starting TJ=25°C, L=640mH, RG=25Ω, peak IAS=9.2A
„
SYMBOL
VDSS
VGSS
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATINGS
80
2.5
UNIT
°C/W
°C/W
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Preliminary
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=95V, VGS=0V
Gate- Source Leakage Current
IGSS
VGS=±20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=5.6A (Note 1)
On State Drain Current (Note 1)
ID(ON)
VGS=10V, VDS>ID(ON)×RDS(ON)MAX
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, ID=9.2A, VDS=0.8*Rated
Gate to Source Charge
QGS
BVDSS, IG(REF)=1.5mA (Note 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=50V, ID≈9.2A, RG=18Ω,
RL=5.5 Ω (Note 3)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
Notes: 1. Pulse test: pulse width≤300µs, duty cycle≤2%
2. Gate Charge is Essentially Independent of Operating Temperature
3. MOSFET Switching Times are Essentially Independent of Operating Temperature
„
Power MOSFET
MIN TYP MAX UNIT
100
2.0
V
250 µA
±100 nA
4.0
0.25 0.27
V
Ω
A
350
130
25
pF
pF
pF
9.2
10
2.5
2.5
9
30
18
20
30
13
63
70
59
nC
nC
nC
ns
ns
ns
ns
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Source to Drain Diode Voltage
VSD
TJ=25°C,ISD=9.2A,VGS=0V (Note 1)
2.5
V
Continuous Source to Drain Current
ISD
9.2
A
Note 3
Pulse Source to Drain Current (Note 2)
ISDM
37
A
Note : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance
curve
3. Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode.
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„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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UF520
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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