UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR FEATURES * Low saturation voltage with equivalent on-resistance be RCE(SAT) about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET. 1 SOT-223 *Pb-free plating product number: UP1868L ORDERING INFORMATION Order Number Normal Lead Free Plating UP1868-AA3-R UP1868L-AA3-R UP1868L-AA3-R Package SOT-223 Pin Assignment 1 2 3 B C E Packing Tape Reel (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AA3: SOT-223 (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R207-015,A UP1868 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -15 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current IC(PEAK) -20 A Continuous Collector Current IC -6 A Power Dissipation PC 3 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (at Ta = 25℃ unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS BVCBO IC=-100µA Breakdown Voltage (Note) BVCEO IC=-10mA BVEBO IE=-100µA IC=-500mA,IB=-5mA Collector-Emitter Saturation Voltage VCE(SAT) IC=-2A, IB=-50mA (Note) IC=-6A, IB=-250mA Base-Emitter Saturation Voltage VBE(SAT) IC=-6A, IB=-250mA Base-Emitter Turn-On Voltage (Note) VBE(ON) VCE=-1V, IC=-6A VCB=-12V Collector Cut-Off Current ICBO VCB=-12V,Ta=100℃ Emitter Cut-Off Current IEBO VEB=-6V hFE1 VCE=-1V , IC=-10mA hFE2 VCE=-1V , IC=-500mA DC Current Gain (Note) hFE3 VCE=-1V , IC=-5mA hFE4 VCE=-1V , IC=-10A Current Gain Bandwidth Product fT VCE=-10V, IC=-100mA, f=50MHz Output Capacitance Cob VCB=-20V, f=1MHz tON IC=-4A, IB1=-400mA Switching Times IB2=400mA, VCC=-10V tOFF Note: Pulse test: Pulse Width=300µs, Duty Cycle≦2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN -15 -12 -6 TYP MAX UNIT V V V -55 -100 mV -132 -160 mV -440 mV -1050 -1200 mV -950 -1050 mV -10 nA -1.0 µA -10 nA 300 300 200 150 1000 80 161 120 116 MHz pF ns 2 of 4 QW-R207-015,A UP1868 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS VCE(SAT ) vs IC VCE(SAT ) vs I C 0.8 0.8 I C/IB=50 Saturation Voltage, VCE(SAT)(V) Saturation Voltage, VCE(SAT) (V) +25℃ 0.6 IC/I B=200 IC/I B=100 IC/I B=50 0.4 0.2 0 0.6 +100℃ +25℃ -20℃ 0.4 0.2 0 1m 10m 100m 1 1m 10 10m Collector Current, I C (A) 100m 10 Collector Current, IC (A) hFE vs. I C VBE(SAT) vs. I C 800 1.6 VCE=1V Saturation Voltage, VBE(SAT)(V) +100℃ DC Current Gain, hFE 1 600 +25℃ 400 -20℃ 200 0 IC/IB =50 -20℃ +25℃ 1.2 +100℃ 0.8 0.4 0 1m 10m 100m 1 10 1m 10m Collector Current, I C (A) 100m 1 10 Collector Current, IC (A) VBE(ON) vs I C Safe Operating Area 1.4 100 -20℃ +25℃ Collector Current, IC(A) Turn on Voltage, VBE(ON) (V) VCE=1V +100℃ 0.7 10 DC 1s 1 10ms 100µs 0.1 0 1m 10m 100m 1 10 Collector Current, I C (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.1 1 10 Collector Emitter Voltage, VCE(V) 3 of 4 QW-R207-015,A UP1868 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R207-015,A