UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR 3 DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 2 FEATURES SOT-23 * High Collector-Emitter voltage: VCEO=-300V * Collector Dissipation: PC(MAX)=350mW *Pb-free plating product number: MMBTA92L ORDERING INFORMATION Order Number Normal Lead Free Plating MMBTA92-AE3-R MMBTA92L-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MMBTA92L-AE3-R (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AE3: SOT-23 (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn MARKING 2D www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-005,B MMBTA92 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation SYMBOL VCBO VCEO VEBO IC Ta=25℃ Tc=25℃ Derate Above 25℃ PC RATINGS -300 -300 -5 -500 350 1.5 12 UNIT V V V mA mW W mW/℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO IC=-1mA, IB=0 Emitter-Base Breakdown Voltage BVEBO IE=-100µA, IC=0 Collector Cut-Off Current ICBO VCB=-200V, IE=0 Emitter Cut-Off Current IEBO VEB=-3V, IC=0 VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA DC Current Gain (Note) hFE VCE=-10V, IC=-30mA Collector-Emitter Saturation Voltage VCE(SAT)1 IC=-20mA, IB=-2mA Base-Emitter Saturation Voltage VBE(SAT)1 IC=-20mA, IB=-2mA VCE=-20V, IC=-10mA, Current Gain Bandwidth Product fT f=100MHz Collector Base Capacitance Ccb VCB=-20V, IE=0, f=1MHz Note: Pulse test: PW<300µs, Duty Cycle<2%, VCE(sat)1<200mV (Class SIN) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN -300 -300 -5 TYP MAX -0.25 -0.10 UNIT V V V µA µA 60 80 80 -0.5 -0.90 V V MHz 6 pF 50 2 of 4 QW-R206-005,B MMBTA92 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS DC Current Gain 103 Saturation Voltage -104 IC=10*IB VCE(SAT), VBE(SAT) (mV) DC Current Gain, hFE VCE=-10V 102 101 100 -100 1 -10 -10 2 -10 3 -10 4 -103 VBE(SAT) -102 -101 -100 Collector Current, IC (mA) -101 -10 2 -103 -10 4 Collector Current, I C (mA) Active-Region Safe Operating Area Capacitance -10 3 CIB 101 CCB -10-1 -100 -101 -102 Collector-Base Voltage(V) -10 2 -10 1 s 0 .1m 3 9 A 92 ms PS SA 1.0 M P M al m ℃ er 25 DC Th T C= 5W o n 1. ati it lim Collector Current, IC (mA) 102 C IB(pF), CCB(pF) VCE(SAT) 625mW Thermal limitation Ta=25℃ bonding breakdown -10 0 limitation T J=150℃ -100 -10 1 -102 -103 Collector-Emitter Voltage (V) Current Gain Bandwidth Product 3 Current Gain Bandwidth Product (MHz) 10 VCE=-20V f=100MHz 102 101 -100 -101 Collector Current, IC (mA) -102 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-005,B MMBTA92 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-005,B