UNISONIC TECHNOLOGIES CO., LTD UP9971 Power MOSFET 5A, 60V N-CHANNEL POWER MOSFET DESCRIPTION DIP-8 The UTC UP9971 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for being used as a load switch or in PWM applications. FEATURES * RDS(ON)<60 mΩ @VGS=10V * RDS(ON)<72 mΩ @VGS=4.5V * Ultra low gate charge ( typical 32.5 nC ) * Low reverse transfer Capacitance ( CRSS = typical 109 pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness SYMBOL (5) (6) 2.Drain (7) (8) 1.Drain (2) 1.Gate (4) 2.Gate (1) 1.Source SOP-8 (3) 2.Source ORDERING INFORMATION Ordering Number Lead Free UP9971L-D08-T UP9971L-S08-R UP9971L-S08-T Halogen Free UP9971G-D08-T UP9971G-S08-R UP9971G-S08-T www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package Packing DIP-8 SOP-8 SOP-8 Tube Tape Reel Tube 1 of 4 QW-R502-294.C UP9971 Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-294.C UP9971 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (VGS=10V) RATINGS UNIT 60 V ±25 V 5 A SOP-8 30 Pulsed Drain Current (Note 2,3) IDM A DIP-8 20 Power Dissipation PD 2 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. Pulse width≦300µs, Duty cycle≦2% SYMBOL VDSS VGSS ID THERMAL DATA PARAMETER SYMBOL θJA Junction to Ambient RATINGS 62.5 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Static Drain-Source On-Resistance (Note) Forward Transconductance (Note) RDS(ON) SOP-8 DIP-8 gFS SOP-8 DIP-8 CISS TEST CONDITIONS MIN VGS=0V, ID=250µA VDS=60 V, VGS=0V VGS=±25V Reference to 25℃, ID=1mA 60 VDS=VGS, ID=250µA VGS=10V, ID=5A VGS=4.5V, ID=2.5 A 1.5 VDS=10V, ID=5 A TYP MAX UNIT 0.06 V 1 µA ±100 nA V/°C 3 60 72 16 7 V mΩ S DYNAMIC PARAMETERS Input Capacitance Output Capacitance VDS=25V, VGS=0V, f =1.0MHz COSS SOP-8 Reverse Transfer Capacitance CRSS DIP-8 SWITCHING PARAMETERS Turn-ON Delay Time (Note) tD(ON) VGS=10V, VDS=30V, RD=6Ω, Turn-ON Rise Time tR RG=3.3Ω, ID=5 A Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge (Note) QG VDS=48V, VGS=10V, ID=5A Gate Source Charge QGS Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage (Note) VSD IS =1.6 A,VGS =0 V Body Diode Reverse Recovery Time trr IS=5A, VGS=0V, di/dt=100A/µs Body Diode Reverse Recovery Charge QRR Note: Pulse width≦300µs, Duty cycle≦2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1658 1560 156 109 110 pF pF pF 9.6 10 30 5.5 32.5 4.9 8.8 ns ns ns ns nC nC nC 1.2 29.2 48 V ns nC 3 of 4 QW-R502-294.C UP9971 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Gate Threshold Voltage Drain Current vs. Drain-Source Breakdown Voltage 300 16 250 14 12 200 10 150 8 100 6 4 50 2 0 0 0 500 1000 1500 2000 2500 0 10 20 30 40 50 60 70 Drain-Source Breakdown Voltage,BVDSS(V) 80 Drain Current, ID (A) Drain Current,ID (mA) Gate Threshold Voltage,VTH (mV) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-294.C