UTC-IC 18N40

UNISONIC TECHNOLOGIES CO., LTD
18N40
Power MOSFET
400V N-CHANNEL POWER
MOSFET
„
DESCRIPTION
The UTC 18N40 is a 400V N-channel Power MOSFET,
providing customers with perfect RDS(ON), low gate charge and
operation with low gate voltages.
The UTC 18N40 is generally used as a load switch or applied in
PWM applications.
„
FEATURES
* RDS(ON) ≤ 408mΩ @VGS = 10 V
* Ultra Low Gate Charge: 50nC (TYP.)
* Low Reverse Transfer ( CRSS = typical 23pF )
* Fast Switching Speed
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen-Free
18N40L-T47-T
18N40G-T47-T
Package
TO-247
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1
G
Pin Assignment
2
3
D
S
Packing
Tube
1 of 3
QW-R502-389.A
18N40
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC =25°С, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
RATINGS
UNIT
VDSS
400
V
VGSS
±30
V
Continuous
ID
18
A
Drain Current
Pulsed
IDM
45
A
Avalanche Current
IAR
18
A
Single Pulsed
EAS
1000
mJ
Avalanche Energy
30
mJ
Repetitive
EAR
Peak Diode Recovery dv/dt
dv/dt
10
V/ns
Power Dissipation
PD
360
W
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Junction to Case
„
SYMBOL
θJC
RATINGS
0.35
UNIT
°С/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=9A (Note)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=0.5VDSS,
Gate Source Charge
QGS
ID=18A, RG=5Ω (External)
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGS=10V, VDS=0.5VDSS,
ID=9A
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IF=IS ,VGS=0V (Note)
Maximum Continuous Drain-Source
IS
VGS=0V
Diode Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Repetitive
Forward Current
Reverse Recovery Time
tRR
VGS=0V, dIF/dt=100A/µs,
IS=18A, VR=100V
Reverse Recovery Charge
QRR
Note: Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
400
2.0
25
±100
V
µA
nA
4.0
200
V
mΩ
2500
280
23
pF
pF
pF
50
15
18
21
22
62
22
nC
nC
nC
ns
ns
ns
ns
0.8
1.5
V
18
A
54
A
200
ns
µC
2 of 3
QW-R502-389.A
18N40
„
Power MOSFET
TYPICAL CHARACTERISTICS
Drain-Source On-State Resistance
Characteristics
Drain Current vs. Source to Drain Voltage
10
10
Drain Current, ID (A)
12
Drain Current,ID (A)
12
8
6
4
2
8
6
4
2
0
0
0
0
400
600
200
800 1000
Source to Drain Voltage,VSD (mV)
Drain Current vs. Gate Threshold Voltage
300
300
250
250
Drain Current,ID (µA)
Drain Current,ID (µA)
VGS=10V,
ID=9.0A
200
150
100
50
2.0
1.5
1.0
0.5
Drain to Source Voltage, VDS (V)
Drain Current vs. Drain-Source
Breakdown Voltage
200
150
100
50
0
0
2
3
1
4
Gate Threshold Voltage,VTH (V)
0
200
100
300
400
500
0
Drain-Source Breakdown Voltage,BVDSS(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-389.A