UNISONIC TECHNOLOGIES CO., LTD UPS1622 LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE CURRENT MODE POWER SWITCH DESCRIPTION The UTC UPS1622 is an integrated PWM controller and Power MOSFET specifically designed for current mode operation with minimal external components. The UTC UPS1622 is designed to provide several special enhancements to satisfy the needs, for example, Power-Saving mode for low standby power (<0.3W), Frequency Hopping , Constant Output Power Limiting , Over Current Protection (OCP), Over Voltage Protection (OVP), Under Voltage Lock Out (UVLO), and Over Temperature Protection (OTP) etc. IC will be shutdown or can auto-restart in certain situations. DIP-8 FEATURE * Internal High Voltage Start-up Circuit * Internal High Voltage Power MOSFET (650V) * Lower than 0.3W Standby Power Design * Gate Output Maximum Voltage Clamp(15V) * Over temperature protection * Over voltage protection * Leading edge blanking * Cycle-by-Cycle current limiting * Under Voltage Lock Out ORDERING INFORMATION Ordering Number Lead Free Halogen Free UPS1622L-D08-T UPS1622G-D08-T Package Packing DIP-8 Tube UPS1622L-D08-T (1) Packing Type (2) Package Type (3) Lead Free www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd (1) T: Tube (2) D08: DIP-8 (3) G: Halogen Free, L: Lead Free 1 of 6 QW-R119-020.a UPS1622 LINEAR INTEGRATED CIRCUIT PIN CONFIGURATION GND 1 8 Drain GND 2 7 Drain FB 3 6 Drain VCC 4 5 Drain PIN DESCRIPTION PIN NO. 1、2 3 4 5~8 PIN NAME GND FB VCC Drain DESCRIPTION Ground Feedback Supply voltage Power MOSFET drain BLOCK DIAGRAM VCC 4 UVLO Reference voltage 8 Drain 7 Drain 6 Drain 5 Drain OTP GND 1/2 OVP Driver Latch Oscillator Burst mode S Q R Q PWM&OCP COMP LEB 0.23v R2=230 R1=1K FB 3 Notes: OTP (Over Temperature Protection) OVP (Over Voltage Protection) OCP (Over Current Protection) UVLO (Under Voltage Latch-Out) LEB (Led Edge Blanking) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R119-020.a UPS1622 LINEAR INTEGRATED CIRCUIT ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Switching Drain Source Voltage VDS(SW) 650 V Supply Voltage VCC 30 V Feedback Current IFB 3 mA Junction Temperature TJ +150 °C Operating Temperature TOPR -40 ~ +125 °C Storage Temperature TSTG -50 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. OPERATING RANGE PARAMETER Supply Voltage SYMBOL VCC RATINGS 8.6 ~ 22 UNIT V ELECTRICAL CHARACTERISTICS (TA＝25°C, VCC=15V, unless otherwise specified) PARAMETER SUPPLY SECTION Start Up Charge Current Start Up Current Supply Current with switch UNDER-VOLTAGE LOCKOUT SECTION Start Threshold Voltage Min. Operating Voltage INTERNAL VOLTAGE REFERENCE Reference Voltage CONTROL SECTION IFB to ID Current Gain Feedback Source Shutdown Current FB Pin Input Impedance Burst-Mode Out FB Voltage Burst-Mode Enter FB Voltage Normal initial Switching frequency Frequency Deviation VS VCC Frequency Deviation VS Temperature PROTECTION SECTION OVP threshold OTP threshold CURRENT LIMITING SECTION Peak Current Limitation Minmum Turn On Time POWER MOSFET SECTION Drain-Source Breakdown Voltage Turn-on voltage between gate and source Off State Drain Current Static Drain-Source On-State Resistance Rise Time SYMBOL ICH IST IOP TEST CONDITIONS GFB-D IFBSD RFB VFB(OUT) VFB(IN) F(SW) FDV FDT Guarantee by design MAX UNIT 22 4.5 1 45 6.5 mA μA mA 13.5 7.5 14.2 8.2 15 9 V V 6.3 6.5 6.7 V 54 560 900 1200 0.94 1.05 60 66 5 5 μA Ω V V kHz % % 130 28 150 170 V °C VCC=10 to 22V TA =-40 to 105°C VOVP T(THR) ILIM tON(MIN) VFB=0V 0.56 VDSS VTH IDSS RDS(ON) VFB=2V, ID=250μA VDS=VGS, ID=250μA VDS=500V, VFB=2V VGS=10V,ID=0.4A VDD =300V, ID =4.0A RG=25Ω (Note 1, 2) 650 2 tR Fall Time tF Drain Capacitance COSS VDS=25V Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP VDS=100V, VCC=0~VCCON VCC = VCCON-0.2V IFB=0.5mA, ID=50mA VCCON VCCOFF VREF MIN 0.7 680 0.84 A nS 12 4 100 14 V V uA Ω 45 100 ns 35 40 80 ns pF 3 of 6 QW-R119-020.a UPS1622 LINEAR INTEGRATED CIRCUIT FUNCTIONAL DESCRIPTION The internal reference voltages and bias circuit work at VCC> VTHD(ON), and shutdown at VCC<VCC(MIN). (1) High Voltage Start up switch Circuit At startup, an internal high-voltage current source supplies the internal bias and charges the external capacitor connected to the VCC pin. When VCC reaches VTHD (ON), the IC begins switching and the internal high-voltage current source is disabled. The IC continues its normal switching operation and the power is supplied from the auxiliary transformer winding unless VCC goes below the stop voltage of VCC(MIN). (2) Switching Frequency Limit The UTC UPS1622 have a constant switching frequency of 60kHz. (3) Protection section The IC takes on more protection functions such as OVP and OTP etc. In case of those failure modes for continual blanking time, the driver is shut down. At the same time, IC enters auto-restart, VCC power on and driver is reset after VCC power on again. OVP OVP will shutdown the switching of the power MOSFET whenever VCC>VOVP. The OVP case as followed Fig. 1 the test circuit as followed Fig. 2. 15V VCC 470u 33n 2 3 4 VDD 470u 33n 8 1 Fig.1 OVP case 500Ω IC3 15V UTC UPS1622 Drain 7 6 5 VOVP VCC Fig.2 OVP test circuit OTP OTP will shut down driver and latch-off when junction temperature TJ>T (THR), and IC will be release on when temperature decreasing under T (THR)-30 and powering on again. (4) The Gain of FB pin to Drain Current Limiting ILIM=GFB-D*0.23V*(R2||R1) (5) Driver Output Section The driver-stage drives the gate of the MOSFET and is optimized to minimize EMI and to provide high circuit efficiency. This is done by reducing the switch on slope when reaching the MOSFET threshold. This is achieved by a slope control of the rising edge at the driver’s output. The output driver is clamped by an internal 15V Zener diode in order to protect power MOSFET transistors against undesirable gate over voltage. (6) Inside power MOSFET Specific Power MOSFET parameter is as “Power MOSFET SECTION” in electrical characteristics table. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R119-020.a UPS1622 TYPICAL APPLICATION CIRCUIT YC1 LINE F1 2 C1 3 NEUT C9 R7 L2 1 T1 7 BD1 1 B6S 4 C8 12V/1.0A D3 D1 C2 L1 C4 C5 C12 GND 10 R1 5 2 D2 C3 3 Drain Source Drain Drain Source Drain 5 6 7 8 R9 UTC UPS1622 R5 R8 R11 IC2 4 1 3 2 C11 1 C6 IC1 2 3 FB 4 VCC LINEAR INTEGRATED CIRCUIT R12 IC3 R10 Fig. 3 UTC UPS1622 Typical Application Circuit Table1. Components reference description for UTC UPS1622 application circuit DESIGNATOR C1 C2 C3 C4 C5 C6 C8 C9 C11 C12 PART TYPE 10μF/400V 10μF/400V 22μF/50V 470μF/16V 220μF/16V 334pF 102pF/1KV 102pF/100V 104pF 104pF DESIGNATOR R1 R5 R7 R8 R9 R10 R11 R12 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw PART TYPE 100KΩ 6.8KΩ 30Ω 1.8KΩ 510Ω 3.92KΩ 15KΩ 4.7KΩ DESIGNATOR D1 D2 D3 IC1 IC2 IC3 YC1 T1 L1 L2 F1 BD1 PART TYPE FR107 RS1D SR39 UPS1622 PC-817 TL431 102pF/400V EE-19 1mH 2μH 1A/250V B6S 5 of 6 QW-R119-020.a UPS1622 LINEAR INTEGRATED CIRCUIT UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R119-020.a