UNISONIC TECHNOLOGIES CO., LTD UT3N06 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3N06 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. FEATURES * Simple drive requirement SYMBOL Drain Gate Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT3N06L-AE3-R UT3N06G-AE3-R UT3N06L-TN3-R UT3N06G-TN3-R UT3N06L-TN3-T UT3N06G-TN3-T Package SOT-23 TO-252 TO-252 Pin Assignment 1 2 3 S G D G D S G D S Packing Tape Reel Tape Reel Tube MARKING www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-366.c UT3N06 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (VGS=4.5V, TA= 25°C) (Note 2) Pulsed Drain Current (Note 3, 4) SYMBOL VDSS VGSS RATINGS 60 ±20 UNIT V V ID 3.0 A 10 A SOT-23 0.35 W Power Dissipation (TA= 25°C) PD TO-252 1.13 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface mounted on 1 in2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad. 3. Pulse width limited by TJ(MAX) 4. Pulse width ≤300μs, duty cycle≤2%. IDM THERMAL DATA PARAMETER Junction to Ambient SYMBOL SOT-23 TO-252 RATING 350 110 θJA UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient SYMBOL TEST CONDITIONS BVDSS ΔBVDSS ΔTJ VGS =0V, ID =250µA IDSS IGSS VDS =60V,VGS =0V VGS =±20V Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Drain to Source On-state Resistance RDS(ON) VDS =VGS, ID =250µA VGS =10V, ID =3A VGS =4.5V, ID =2A www.unisonic.com.tw TYP MAX UNIT 60 Reference to 25°C, ID=1mA DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS=25V,VGS=0V,f =1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time (Note) tD(ON) Turn-ON Rise Time tR VGS=10V, VDS=30V, ID=1A, Turn-OFF Delay Time tD(OFF) RD =30Ω, RG =3.3Ω Turn-OFF Fall-Time tF Total Gate Charge (Note) QG Gate Source Charge QGS VGS =4.5V, VDS =48V, ID =3A Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note) VSD IS =1.2A, VGS =0V Reverse Recovery Time trr IS=3A,VGS=0V, dI/dt=100A/µs Reverse Recovery Charge QRR Note: Pulse width ≤300μs, duty cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD MIN V 0.05 1.0 490 55 40 6 5 16 3 6 1.6 3 V/°C 10 ±100 µA nA 3.0 90 120 V mΩ mΩ 780 pF pF pF 42 58 10 1.2 25 26 ns ns ns ns nC nC nC V ns nC 2 of 3 QW-R502-366.c UT3N06 Preliminary Power MOSFET TEST WAVEFORMS VG QG 4.5V QGS QGD Charge Switching Time Waveform Q Gate Charge Waveform UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-366.c