UNISONIC TECHNOLOGIES CO., LTD UT30P04 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT30P04 is a P-channel enhancement mode Power MOSFET, providing customers fast switching, ruggedized device design, low on-resistance and cost-effectiveness with UTC’s advanced technology. FEATURES * Low on-Resistance * Fast Switching Speed SYMBOL D G S ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT30P04L-TN3-R UT30P04G-TN3-R Note: G:Gate, D:Drain, S:Source Package TO-252 www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 G Pin Assignment 2 3 D S Packing Tape Reel 1 of 3 QW-R502-465.b UT30P04 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C Unless Otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT -40 V ±20 V TC=25°C -21 Continuous Drain Current ID TC=70°C -17 A Pulsed Drain Current (Note 2) IDM -70 Avalanche Current IAS -27 Avalanche Energy (Note 3) L=0.1mH EAS 36 mJ TC=25°C 30 PD Power Dissipation W TC=70°C 20 Operating Junction Temperature TJ -55~150 °C Storage Temperature TSTG -55~150 °C Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by maximum junction temperature. 3. VDD=-20V. Starting TJ=25°C. SYMBOL VDS VGS THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 40 4.1 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS Drain-Source Leakage Current IDSS Gate- Source Leakage Current On-State Drain Current (Note 1) ON CHARACTERISTICS Gate Threshold Voltage IGSS ID(ON) Static Drain-Source On-State Resistance (Note 1) Forward Transconductance (Note 1) Gate Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS (Note 2) VGS(TH) RDS(ON) gFS Rg CISS COSS CRSS TEST CONDITIONS ID=-250µA, VGS=0V VDS=-32V, VGS=0V VDS=-30V, VGS=0V, TJ=125°C VDS=0V, VGS=±20V VDS=-5V, VGS=-10V -40 VDS=VGS, ID=-250µA VGS=-5V, ID=-8A VGS=-7V, ID=-8A VGS=-10V, ID=-10A VDS=-10V, ID=-10A VGS=0V, VDS=0V, f=1.0MHz -1 VGS=0V, VDS=-20V, f=1.0MHz QG (VGS=-10V) QG (VGS=-4.5V) VDS=0.5V(BR)DSS, ID=-18A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VGS=-10V, VDS=-20V, ID≈-10A, Rise Time tR RGS=6Ω, RL=2Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Current IS Drain-Source Diode Forward Voltage 1 VSD IF=-10A, VGS=0V Reverse Recovery Time tRR IF=-10A, dIF/dt=100A/µs Reverse Recovery Charge QRR Note: 1. Pulsde test: Pulse width ≤300µsec, duty cycle ≤2%. 2. Independent of operating temperature. Total Gate Charge UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT V 1 10 ±250 -70 -2.5 65 35 30 20 4.95 -3 73 50 40 nA A V mΩ S Ω 1090 175 91 pF 17 8.5 5.5 3 6 16 26 10 nC ns ns ns ns -21 -1.2 15.5 7.9 µA A V ns nC 2 of 3 QW-R502-465.b UT30P04 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-465.b