FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC (max) = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 75 Units V VCES VEBO Collector-Emitter Voltage 40 V Emitter-Base Voltage 6 IC V Collector Current 600 mA PC Collector Power Dissipation 325 mW TSTG Storage Temperature 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=10µA, IE=0 Min. 75 BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 40 BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 ICBO Collector Cut-off Current VCB=60V, IE=0 hFE * DC Current Gain VCE=10V, IC=0.1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA Max. V V 0.01 35 50 75 100 40 VCE (sat) * Collector-Emitter Saturation Voltage IC=150mA, IB=15mA IC=500mA, IB=50mA VBE (sat) * Base-Emitter Saturation Voltage IC=150mA, IB=15mA IC=500mA, IB=50mA 0.6 fT Current Gain Bandwidth Product IC=20mA, VCE=20V, f=100MHz 300 Cob Output Capacitance VCB=10V, IE=0, f=1MHz NF Noise Figure tON tOFF 4 Units V µA 300 0.3 1.0 V V 1.2 2.0 V V MHz 8 pF IC=100µA, VCE=10V RS=1KΩ, f=1kHz 4 dB Turn On Time VCC=30V, IC=150mA VBE=0.5V, IB1=15mA 35 ns Turn Off Time VCC=30V, IC=150mA IB1=IB2=15mA 285 ns * Pulse Test: PW≤300µs, Duty Cycle≤2% Marking S1P ©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 FJX2222A VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 10000 hFE, DC CURRENT GAIN VCE = 10V 1000 100 10 1 10 100 10 IC = 10 IB VBE (sat) 1 0.1 VCE (sat) 0.01 1000 1 10 IC[A], COLLECTOR CURRENT 1000 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Base Saturation Voltage Base-Emitter Saturation Voltage 12 8 6 4 2 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 IE = 0 f = 1MHz 10 Cob [pF], CAPACITANCE 100 VCE = 20V 100 10 0 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Output Capacitance ©2002 Fairchild Semiconductor Corporation 1 10 100 1000 IC[mA], COLLECTOR CURRENT Figure 4. Current Gain Bandwidth Product Rev. B1, August 2002 FJX2222A Package Dimensions SOT-323 2.00±0.20 3° 1.25±0.10 2.10±0.10 0.95±0.15 0.90 ±0.10 +0.05 0.05 –0.02 1.00±0.10 1.30±0.10 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I1