DICE SPECIFICATION RH1021C Precision Reference RH1021C-5 5 RH1021C-10 5 4 6 4 6 6 2 2 94 × 55 mils PAD FUNCTION 2. 4. 5. 6. Input Ground Trim Output 94 × 55 mils DIE CROSS REFERENCE LTC Finished Part Number Order DICE CANDIDATE Part Number Below RH1021C-5 RH1021C-10 RH1021C-5 DICE RH1021C-10 DICE Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 1 DICE SPECIFICATION RH1021C W DICE ELECTRICAL TEST LI ITS VS = 10V, IOUT = 0, TA = 25°C unless otherwise noted. RH1021C-5 PARAMETER CONDITIONS MIN MAX Output Voltage (Note 1) RH1021C-5 4.9975 5.0025 Line Regulation (Note 2) 7.2V ≤ VIN ≤ 10V 10V ≤ VIN ≤ 40V 12 6 ppm/V ppm/V Load Regulation (Sourcing Current) 0 ≤ IOUT ≤ 10mA (Note 2) 440 ppm/mA Load Regulation (Sinking Current) 0 ≤ IOUT ≤ 10mA (Note 2) 440 ppm/mA 1.2 mA Supply Current UNITS V VS = 15V, IOUT = 0, TA = 25°C unless otherwise noted. RH1021C-10 PARAMETER CONDITIONS MIN MAX Output Voltage (Note 1) RH1021C-10 9.995 10.005 Line Regulation (Note 2) 11.5V ≤ VIN ≤ 14.5V 14.5V ≤ VIN ≤ 40V 15 3 ppm/V ppm/V Load Regulation (Sourcing Current) 0 ≤ IOUT ≤ 10mA (Note 2) 220 ppm/mA Load Regulation (Shunt Mode) 1.7mA ≤ ISHUNT ≤ 10mA (Notes 2, 3) 220 ppm/mA 1.7 mA 1.5 mA Supply Current (Series Mode) Minimum Current (Shunt Mode) VIN is Open UNITS V Note 1: Output voltage is measured immediately after turn-on. Changes due to chip warm-up are typically less than 0.005%. Note 2: Line and load regulation are measured on a pulse basis. Output changes due to die temperature change must be taken into account separately. Note 3: Shunt mode regulation is measured with the input open. With the input connected, shunt mode current can be reduced to 0mA. Load regulation will remain the same. Rad Hard die require special handling as compared to standard IC chips. Rad Hard die are susceptible to surface damage because there is no silicon nitride passivation as on standard die. Silicon nitride protects the die surface from scratches by its hard and dense properties. The passivation on Rad Hard die is silicon dioxide that is much “softer” than silicon nitride. the die around from the chip tray, use a Teflon-tipped vacuum wand. This wand can be made by pushing a small diameter Teflon tubing onto the tip of a steel-tipped wand. The inside diameter of the Teflon tip should match the die size for efficient pickup. The tip of the Teflon should be cut square and flat to ensure good vacuum to die surface. Ensure the Teflon tip remains clean from debris by inspecting under stereoscope. LTC recommends that die handling be performed with extreme care so as to protect the die surface from scratches. If the need arises to move During die attach, care must be exercised to ensure no tweezers touch the top of the die. Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information on dice performance and lot qualifications via lot sampling test procedures. Dice data sheet subject to change. Please consult factory for current revision in production. I.D.No. 66-13-1021 2 Linear Technology Corporation rh1021c LT/LT 1099 50 • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408)432-1900 ● FAX: (408) 434-0507 ● www.linear-tech.com © LINEAR TECHNOLOGY CORPORATION 1999