DICE SPECIFICATION RH119 Dual Comparator 10 8 9 PAD FUNCTION 7 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 1 6 2 3 5 4 W DICE ELECTRICAL TEST LI ITS PARAMETER Input Offset Voltage IOS IB AV VSAT Input Offset Current Input Bias Current Large-Signal Voltage Gain Saturation Voltage Output Leakage Current Input Voltage Range IS Differential Input Voltage Positive Supply Current Negative Supply Current LTC Finished Part Number Order DICE CANDIDATE Part Number Below RH119 RH119 DICE Backside (substrate) is an alloyed gold layer. Connect to V –. 80 × 59 mils SYMBOL VOS Output 1 Ground 1 +Input 1 –Input 1 V – (Substrate) Output 2 Ground 2 +Input 2 –Input 2 V+ DIE CROSS REFERENCE (Notes 1, 2, 3) CONDITIONS VS = ±15V, VCM = 0V (Note 4) (Note 4) (Note 4) MIN MAX 4.0 4.0 75 500 UNITS mV mV nA nA 1.5 0.4 2 12 3 ±5 11.5 4.5 V V µA V V V mA mA 10 VIN ≤ – 5mV, IO = 25mA V + ≥ 4.5V, V – = 0V, VIN = ≤ – 6mV, ISINK ≤ 3.2mA VIN = ≥ 5mV, VOUT = 35V VS = ±15V V + = 5V, V – = 0V V + = ±15V VS = ±15V Note 1: Dice are probe tested at 25°C to the limits above. Final specs after assembly cannot be guaranteed at the die level due to yield loss and assembly shifts. For absolute maximum ratings, typical specifications, performance curves and finished product specifications, please refer to the standard data sheet. Note 2: For lot qualification based on sample lot assembly and testing, please contact LTC Marketing. Note 3: Unless otherwise noted, supply voltage equals ±15V and TA = 25°C. The ground pin is grounded. Note that the maximum –12 1 voltage allowed between the ground pin and V + is 18V. Do not tie the ground pin to V – when the power supply voltage exceeds ±9V. The offset voltage, offset current and bias current specifications apply for all supply voltages between ±15V and 5V unless otherwise specified. Note 4: The offset voltages and currents given are the maximum values required to drive the output within 1V of either supply with a 1mA load. Thus, these parameters define an error band and take into account the worst-case effects of voltage gain and input impedance. Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 1 DICE SPECIFICATION RH119 Rad Hard die require special handling as compared to standard IC chips. Rad Hard die are susceptible to surface damage because there is no silicon nitride passivation as on standard die. Silicon nitride protects the die surface from scratches by its hard and dense properties. The passivation on Rad Hard die is silicon dioxide that is much “softer” than silicon nitride. the die around from the chip tray, use a Teflon-tipped vacuum wand. This wand can be made by pushing a small diameter Teflon tubing onto the tip of a steel-tipped wand. The inside diameter of the Teflon tip should match the die size for efficient pickup. The tip of the Teflon should be cut square and flat to ensure good vacuum to die surface. Ensure the Teflon tip remains clean from debris by inspecting under stereoscope. LTC recommends that die handling be performed with extreme care so as to protect the die surface from scratches. If the need arises to move During die attach, care must be exercised to ensure no tweezers touch the top of the die. Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information on dice performance and lot qualifications via lot sampling test procedures. Dice data sheet subject to change. Please consult factory for current revision in production. 2 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408)432-1900 ● FAX: (408) 434-0507 ● www.linear-tech.com I.D. No. 66-01-0176 LT/LT 0599 50 Rev A PRINTED IN USA © LINEAR TECHNOLOGY CORPORATION 1998