MITSUBISHI HIGH VOLTAGE DIODE MODULE RM600DG-130S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM600DG-130S ● IF ................................................................... 600A ● VRRM ...................................................... 6500V ● High Insulated Type ● 2-element in a Pack ● AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 ±0.5 4-M8 NUTS 57 ±0.25 40.4 ±0.5 1 4 (K) 2 (K) 3 (A) 1 (A) 140 ±0.5 3 124 ±0.25 2 44 ±0.3 4 22 ±0.3 17 ±0.1 57 ±0.25 >PET+PBT< 6-φ7 MOUNTING HOLES CIRCUIT DIAGRAM 48 +1.0 0 Screwing depth min. 16.5 5 ±0.15 61.2 ±0.5 16.5 ±0.3 34.4 ±0.5 High Voltage Diode Module May 2009 1 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM600DG-130S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module MAXIMUM RATINGS Symbol Item Conditions VRRM Repetitive peak reverse voltage VRSM Non-repetitive peak reverse voltage VR(DC) IF Reverse DC voltage DC forward current IFSM Surge forward current I 2t Current-squared, time integration Viso Isolation voltage Ve Tj Top Tstg Partial discharge extinction voltage Junction temperature Operating temperature Storage temperature Ratings Tj = –40 °C Tj = +25 °C Tj = +125 °C Tj = –40 °C Tj = +25 °C Tj = +125 °C Tj = 25 °C TC = 25 °C Tj = 25 °C start, tw = 8.3 ms Half sign wave Tj = 25 °C start, tw = 8.3 ms Half sign wave Charged part to the baseplate RMS sinusoidal, 60Hz 1min. RMS sinusoidal, 60Hz, QPD ≤ 10PC — — — Unit 5800 6300 6500 5800 6300 6500 4500 600 V V V A 4800 A 96 kA2s 10200 V 5100 –40 ~ +150 –40 ~ +125 –40 ~ +125 V °C °C °C ELECTRICAL CHARACTERISTICS Symbol Item Conditions IRRM Repetitive reverse current VRM = VRRM VFM Forward voltage IF = 600 A trr Irr Qrr Erec Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy (Note 2) (Note 1) Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VR = 3600 V, IF = 600 A di/dt = –2000 A/µs Ls=100nH, Tj = 125 °C Min — — — — — — — — Limits Typ — 10 4.00 3.60 1.0 1250 900 2.0 Max 10 90 — — — — — — Unit mA V µs A µC J/P Note 1. It doesn't include the voltage drop by internal lead resistance. 2. Erec is the integral of 0.1VR x 0.1Irr x dt. High Voltage Diode Module May 2009 2 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM600DG-130S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module THERMAL CHARACTERISTICS Symbol Item Conditions Rth(j-c) Thermal resistance Rth(c-f) Contact thermal resistance Junction to case (per 1/2 module) Case to Fin, λgrease = 1W/m·K D(c-f)=100µm, (per 1/2 module) Min Limits Typ Max — — 22.0 K/kW — 16.0 — K/kW Min 7.0 3.0 — 600 26 56 — — Limits Typ — — 1.0 — — — 44 0.27 Max 15.0 6.0 — — — — — — Unit MECHANICAL CHARACTERISTICS Item Symbol Mt Ms m CTI Da Ds LP CE RCC’+EE’ Conditions M8: Main terminals screw M6: Mounting screw Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance — — — — — Tc = 25 °C Unit N·m N·m kg — mm mm nH mΩ PERFORMANCE CURVES REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) FORWARD CHARACTERISTICS (TYPICAL) 3.0 REVERSE RECOVERY ENERGY Erec (J/p) 1200 FORWARD CURRENT IF (A) 1000 800 600 400 200 VR = 3600V, di/dt = 2000A/µs Tj = 125°C, LS = 100nH 2.5 2.0 1.5 1.0 0.5 Tj = 25°C Tj = 125°C 0 0 1 2 3 4 5 6 7 0 8 FORWARD VOLTAGE VF (V) 0 200 400 600 800 1000 1200 1400 FORWARD CURRENT IF (A) High Voltage Diode Module May 2009 3 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM600DG-130S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 102 104 VR = 3600V, di/dt = 2000A/µs Tj = 125°C, LS = 100nH 2 2 Irr 101 103 7 5 7 5 3 3 2 2 trr 102 7 5 7 5 3 3 2 2 10-1 1 10 2 3 5 7 102 2 3 5 7 103 VR ≤ 4500V, di/dt ≤ 3000A/µs Tj = 125°C REVERSE RECOVERY CURRENT Irr (A) 3 3 100 1500 7 5 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (µs) 7 5 101 2 3 1000 500 0 5 7 104 0 FORWARD CURRENT IF (A) 2000 4000 6000 8000 REVERSE VOLTAGE VR (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Rth(j–c) = 22K/kW 1.0 n 0.8 Z th( j –c ) ( t ) = 0.6 0.4 Ri 1–exp Σ i=1 NORMALIZED TRANSIENT THERMAL IMPEDANCE 1.2 – t ti 1 2 3 4 Ri [K/kW] 0.0059 0.0978 0.6571 0.2392 τ i [sec] 0.0002 0.0074 0.0732 0.4488 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) High Voltage Diode Module May 2009 4