MITSUBISHI HVDi MODULES Prepared by H.Uemura Revision: 1.0 Approved by H.Yamaguchi 21-Sep.-2010 RM400DG-90F HIGH POWER SWITCHING USE INSULATED TYPE HVDi (High Voltage Diode) Modules RM400DG-90F N/A ● IF ……………………… 400 A ● VRRM …………………… 4500 V ● 2-element in a Pack ● High Insulated Type ● Soft Recovery Diode ● AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm HVDi (High Voltage Diode) MODULES HVM-2024 1 of 5 MITSUBISHI HVDi MODULES RM400DG-90F HIGH POWER SWITCHING USE INSULATED TYPE HVDi (High Voltage Diode) Modules MAXIMUM RATINGS Symbol Conditions Item VRRM Repetitive peak reverse voltage VRSM Non-repetitive peak reverse voltage IF IFRM IFSM 2 It Ratings Tj = −40…+125°C 4500 Tj = −50°C 4400 Tj = −40…+125°C 4500 Tj = −50°C 4400 DC, Tc = 25°C Collector current Unit Pulse (Note 1) V V 400 A 800 A Surge (non-repetitive) forward current Tj = 125°C, VR = 0 V, t = 10 ms 3.4 kA Surge forward current integral Tj = 125°C, VR = 0 V, t = 10 ms 58 kA s Viso Isolation voltage RMS, sinusoidal, f = 60Hz, t = 1 min. Ve Partial discharge extinction voltage RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC Tj 2 10200 V 5100 V Junction temperature −50 ~ +150 °C Tjop Operating temperature −50 ~ +125 °C Tstg Storage temperature −55 ~ +150 °C ELECTRICAL CHARACTERISTICS Symbol Item Limits Conditions IRRM Repetitive reverse current VRM = VRRM VFM Forward voltage IF = 400 A trr Reverse recovery time Irr Reverse recovery current (Note 2) VCC = 2800 V IC = 400 A VGE = ±15 V Ls = 150 nH Qrr Reverse recovery charge Erec(10%) Reverse recovery energy (Note 3) Erec Reverse recovery energy (Note 4) −diF/dt = 1350 A/µs @ Tj = 25°C 1250 A/µs @ Tj = 125°C Inductive load Min Typ Max Tj = 25°C — — 1.0 Tj = 125°C — 1.0 — Tj = 25°C — 2.55 — Tj = 125°C — 2.85 3.45 Tj = 25°C — 0.70 — Tj = 125°C — 0.90 — Tj = 25°C — 400 — Tj = 125°C — 440 — Tj = 25°C — 370 — Tj = 125°C — 580 — Tj = 25°C — 0.48 — Tj = 125°C — 0.75 — Tj = 25°C — 0.55 — Tj = 125°C — 0.85 — Unit mA V µs A µC J/P J/P HVDi (High Voltage Diode) MODULES HVM-2024 2 of 5 MITSUBISHI HVDi MODULES RM400DG-90F HIGH POWER SWITCHING USE INSULATED TYPE HVDi (High Voltage Diode) Modules THERMAL CHARACTERISTICS Symbol Item Rth(j-c)D Thermal resistance Rth(c-s) Contact thermal resistance Conditions Junction to Case, 1/2 module Case to Fin, λgrease = 1W/m·K D(c-s) = 100 µm, 1/2 module Limits Unit Min Typ Max — — 58.5 K/kW — 48.0 — K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms Item Mounting torque Conditions Limits Unit Min Typ Max M8: Main terminals screw 7.0 — 22.0 N·m M6: Mounting screw 3.0 — 6.0 N·m — 1.0 — kg m Mass CTI Comparative tracking index 600 — — — da Clearance 26.0 — — Mm ds Creepage distance 56.0 — — Mm LP AK Parasitic stray inductance 1/2 module — 44.0 — nH RAA’+KK’ Internal lead resistance Tc = 25°C, 1/2 module — 0.27 — mΩ Note 1. Note 2. Note 3. Note 4. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. Erec(10%) is the integral of 0.1VR x 0.1IF x dt. The integration range of Erec according to IEC 60747. HVDi (High Voltage Diode) MODULES HVM-2024 3 of 5 MITSUBISHI HVDi MODULES RM400DG-90F HIGH POWER SWITCHING USE INSULATED TYPE HVDi (High Voltage Diode) Modules PERFORMANCE CURVES REVERSE RECOVERY CHARACTERISTICS (TYPICAL) FORWARD CHARACTERISTICS (TYPICAL) 2.0 800 V = 2800V, LS = 150nH Tj = 125 °C , Inductive load Reverse Recovery Energies [J/pulse] CC 700 Forward Current [A] 600 Tj = 125°C 500 Tj = 25°C 400 300 200 100 0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 Forward Voltage [V] 0 100 200 300 400 500 600 700 800 Forward Current [A] REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 2.0 V = 2800V, LS = 150nH Tj = 125°C, Inductive load Reverse Recovery Energies [J/pulse] CC 1.5 1.0 0.5 0.0 0 400 800 1200 1600 2000 Current Slope [A/µs] HVDi (High Voltage Diode) MODULES HVM-2024 4 of 5 MITSUBISHI HVDi MODULES RM400DG-90F HIGH POWER SWITCHING USE INSULATED TYPE HVDi (High Voltage Diode) Modules PERFORMANCE CURVES REVERSE RECOVERY SAFE OPERATING AREA (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 10 1000 1000 V ≤ 3200V, di/dt < 2kA/µs Tj = 125°C, Ls = 150nH Irr 1 100 trr 0.1 100 Reverse Recovery Current [A] CC Reverse Recovery Current [A] Reverse Recovery Time [µs] VCC = 2800V, LS = 150nH Tj = 125°C, Inductive load 800 600 400 200 10 1000 0 0 1000 Forward Current [A] 2000 3000 4000 5000 Reverse Voltage [V] TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Normalized Transient Thermal impedance 1.2 Rth(j-c )R = 58.5K/kW Z 1.0 0.8 th( j − c ) (t ) = n ⎧ ⎪ i⎨ ⎪⎩ ∑ R 1− exp i =1 ⎛ t ⎞⎫ ⎜− ⎟ ⎜ ⎟⎪ i ⎠⎬ ⎝ τ ⎪⎭ Ri [K/kW] : 1 0.0059 2 0.0978 3 0.6571 4 0.2392 τi [sec] : 0.0002 0.0074 0.0732 0.4488 0.6 0.4 0.2 0.0 0.001 0.01 0.1 1 10 Time [s] HVDi (High Voltage Diode) MODULES HVM-2024 5 of 5