MITSUBISHI RM400DG-90F

MITSUBISHI HVDi MODULES
Prepared by
H.Uemura
Revision: 1.0
Approved by
H.Yamaguchi 21-Sep.-2010
RM400DG-90F
HIGH POWER SWITCHING USE
INSULATED TYPE
HVDi (High Voltage Diode) Modules
RM400DG-90F
N/A
● IF ………………………
400 A
● VRRM ……………………
4500 V
● 2-element in a Pack
● High Insulated Type
● Soft Recovery Diode
● AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
HVDi (High Voltage Diode) MODULES
HVM-2024
1 of 5
MITSUBISHI HVDi MODULES
RM400DG-90F
HIGH POWER SWITCHING USE
INSULATED TYPE
HVDi (High Voltage Diode) Modules
MAXIMUM RATINGS
Symbol
Conditions
Item
VRRM
Repetitive peak reverse voltage
VRSM
Non-repetitive peak reverse voltage
IF
IFRM
IFSM
2
It
Ratings
Tj = −40…+125°C
4500
Tj = −50°C
4400
Tj = −40…+125°C
4500
Tj = −50°C
4400
DC, Tc = 25°C
Collector current
Unit
Pulse
(Note 1)
V
V
400
A
800
A
Surge (non-repetitive) forward current
Tj = 125°C, VR = 0 V, t = 10 ms
3.4
kA
Surge forward current integral
Tj = 125°C, VR = 0 V, t = 10 ms
58
kA s
Viso
Isolation voltage
RMS, sinusoidal, f = 60Hz, t = 1 min.
Ve
Partial discharge extinction voltage
RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC
Tj
2
10200
V
5100
V
Junction temperature
−50 ~ +150
°C
Tjop
Operating temperature
−50 ~ +125
°C
Tstg
Storage temperature
−55 ~ +150
°C
ELECTRICAL CHARACTERISTICS
Symbol
Item
Limits
Conditions
IRRM
Repetitive reverse current
VRM = VRRM
VFM
Forward voltage
IF = 400 A
trr
Reverse recovery time
Irr
Reverse recovery current
(Note 2)
VCC = 2800 V
IC = 400 A
VGE = ±15 V
Ls = 150 nH
Qrr
Reverse recovery charge
Erec(10%)
Reverse recovery energy
(Note 3)
Erec
Reverse recovery energy
(Note 4)
−diF/dt =
1350 A/µs @ Tj = 25°C
1250 A/µs @ Tj = 125°C
Inductive load
Min
Typ
Max
Tj = 25°C
—
—
1.0
Tj = 125°C
—
1.0
—
Tj = 25°C
—
2.55
—
Tj = 125°C
—
2.85
3.45
Tj = 25°C
—
0.70
—
Tj = 125°C
—
0.90
—
Tj = 25°C
—
400
—
Tj = 125°C
—
440
—
Tj = 25°C
—
370
—
Tj = 125°C
—
580
—
Tj = 25°C
—
0.48
—
Tj = 125°C
—
0.75
—
Tj = 25°C
—
0.55
—
Tj = 125°C
—
0.85
—
Unit
mA
V
µs
A
µC
J/P
J/P
HVDi (High Voltage Diode) MODULES
HVM-2024
2 of 5
MITSUBISHI HVDi MODULES
RM400DG-90F
HIGH POWER SWITCHING USE
INSULATED TYPE
HVDi (High Voltage Diode) Modules
THERMAL CHARACTERISTICS
Symbol
Item
Rth(j-c)D
Thermal resistance
Rth(c-s)
Contact thermal resistance
Conditions
Junction to Case, 1/2 module
Case to Fin, λgrease = 1W/m·K
D(c-s) = 100 µm, 1/2 module
Limits
Unit
Min
Typ
Max
—
—
58.5
K/kW
—
48.0
—
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
Item
Mounting torque
Conditions
Limits
Unit
Min
Typ
Max
M8: Main terminals screw
7.0
—
22.0
N·m
M6: Mounting screw
3.0
—
6.0
N·m
—
1.0
—
kg
m
Mass
CTI
Comparative tracking index
600
—
—
—
da
Clearance
26.0
—
—
Mm
ds
Creepage distance
56.0
—
—
Mm
LP AK
Parasitic stray inductance
1/2 module
—
44.0
—
nH
RAA’+KK’
Internal lead resistance
Tc = 25°C, 1/2 module
—
0.27
—
mΩ
Note 1.
Note 2.
Note 3.
Note 4.
Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
Pulse width and repetition rate should be such as to cause negligible temperature rise.
Erec(10%) is the integral of 0.1VR x 0.1IF x dt.
The integration range of Erec according to IEC 60747.
HVDi (High Voltage Diode) MODULES
HVM-2024
3 of 5
MITSUBISHI HVDi MODULES
RM400DG-90F
HIGH POWER SWITCHING USE
INSULATED TYPE
HVDi (High Voltage Diode) Modules
PERFORMANCE CURVES
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
FORWARD CHARACTERISTICS
(TYPICAL)
2.0
800
V = 2800V, LS = 150nH
Tj = 125 °C , Inductive load
Reverse Recovery Energies [J/pulse]
CC
700
Forward Current [A]
600
Tj = 125°C
500
Tj = 25°C
400
300
200
100
0
1.5
1.0
0.5
0.0
0
1
2
3
4
5
Forward Voltage [V]
0
100 200 300 400 500 600 700 800
Forward Current [A]
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
2.0
V = 2800V, LS = 150nH
Tj = 125°C, Inductive load
Reverse Recovery Energies [J/pulse]
CC
1.5
1.0
0.5
0.0
0
400
800
1200
1600
2000
Current Slope [A/µs]
HVDi (High Voltage Diode) MODULES
HVM-2024
4 of 5
MITSUBISHI HVDi MODULES
RM400DG-90F
HIGH POWER SWITCHING USE
INSULATED TYPE
HVDi (High Voltage Diode) Modules
PERFORMANCE CURVES
REVERSE RECOVERY SAFE OPERATING AREA
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
1000
1000
V ≤ 3200V, di/dt < 2kA/µs
Tj = 125°C, Ls = 150nH
Irr
1
100
trr
0.1
100
Reverse Recovery Current [A]
CC
Reverse Recovery Current [A]
Reverse Recovery Time [µs]
VCC = 2800V, LS = 150nH
Tj = 125°C, Inductive load
800
600
400
200
10
1000
0
0
1000
Forward Current [A]
2000
3000
4000
5000
Reverse Voltage [V]
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
Normalized Transient Thermal impedance
1.2
Rth(j-c )R = 58.5K/kW
Z
1.0
0.8
th( j − c )
(t ) =
n
⎧
⎪
i⎨
⎪⎩
∑ R 1− exp
i =1
⎛ t ⎞⎫
⎜− ⎟
⎜
⎟⎪
i ⎠⎬
⎝
τ
⎪⎭
Ri [K/kW] :
1
0.0059
2
0.0978
3
0.6571
4
0.2392
τi [sec] :
0.0002
0.0074
0.0732
0.4488
0.6
0.4
0.2
0.0
0.001
0.01
0.1
1
10
Time [s]
HVDi (High Voltage Diode) MODULES
HVM-2024
5 of 5