MICROCHIP MCP1631HV

MCP1631/HV/MCP1631V/VHV
High-Speed, Pulse Width Modulator
Features
General Description
• Programmable Switching Battery Charger
Designs
• High-Speed Analog PWM Controller
(2 MHz Operation)
• Combine with Microcontroller for “Intelligent”
Power System Development
• Peak Current Mode Control (MCP1631)
• Voltage Mode Control (MCP1631V)
• High Voltage Options Operate to +16V Input:
- MCP1631HV Current Mode
- MCP1631VHV Voltage Mode
• Regulated Output Voltage Options:
+5.0V or +3.3V
250 mA maximum current
• External Oscillator Input sets Switching
Frequency and Maximum Duty Cycle Limit
• External Reference Input Sets Regulation Voltage
or Current
• Error Amplifier, Battery Current ISNS Amplifier,
Battery Voltage VSNS Amplifier Integrated
• Integrated Overvoltage Comparator
• Integrated High Current Low Side MOSFET
Driver (1A Peak)
• Shutdown mode reduces IQ to 2.4 µA (typical)
• Internal Overtemperature Protection
• Undervoltage Lockout (UVLO)
• Package Options:
- 4 mm x 4 mm 20-Lead QFN
(MCP1631/MCP1631V only)
- 20-Lead TSSOP (All Devices)
- 20-Lead SSOP (All Devices)
T he MCP16 31/MC P1631 V is a hi gh-spe ed
analog pulse width modulator (PWM) used to develop
intelligent power systems. When combined with a
microcontroller, the MCP1631/MCP1631V will control
the power system duty cycle providing output voltage
or current regulation. The microcontroller can be used
to adjust output voltage or current, switching frequency
and maximum duty cycle while providing additional
features making the power system more intelligent,
robust and adaptable.
Typical applications for the MCP1631/MCP1631V
include programmable switch mode battery chargers
capable of charging multiple chemistries, like Li-Ion,
NiMH, NiCd and Pb-Acid configured as single or
multiple cells. By combining with a small
microcontroller, intelligent LED lighting designs and
programmable SEPIC topology voltage and current
sources can also be developed.
The MCP1631/MCP1631V inputs were developed to
be attached to the I/O pins of a microcontroller for
design flexibility. Additional features integrated into the
MCP1631HV/MCP1631VHV provide signal conditioning and protection features for battery charger or
constant current source applications.
For applications that operate from a high voltage input,
the MCP1631HV and MCP1631VHV device options
can be used to operate directly from a +3.5V to +16V
input. For these applications, an additional low drop out
+5V or +3.3V regulated output is available and can
provide current up to 250 mA to power a microcontroller
and auxiliary circuits.
Applications
• High Input Voltage Programmable Switching
Battery Chargers
• Supports Multiple Chemistries Li-Ion, NiMH, NiCd
Intelligent and Pb-Acid
• LED Lighting Applications
• Constant Current SEPIC Power Train Design
• USB Input Programmable Switching Battery
Chargers
© 2008 Microchip Technology Inc.
DS22063B-page 1
MCP1631/HV/MCP1631V/VHV
Package Types
20-Lead SSOP and TSSOP
20-Lead SSOP and TSSOP
MCP1631/MCP1631V
MCP1631HV/MCP1631VHV
PGND
1
20 VEXT
PGND
1
20 VEXT
SHDN
2
19 PVDD
SHDN
2
19 PVDD
OSCIN
3
18 CS/VRAMP
OSCIN
3
18
OSCDIS
4
17 FB
OSCDIS
4
17 FB
OVIN
5
16 COMP
OVIN
5
16
VREF
6
15 ISOUT
VREF
6
15 ISOUT
AGND
7
14 VSOUT
AGND
7
14
NC
8
13 ISIN
NC
8
13 ISIN
NC
9
12 VSIN
NC
9
12 VSIN
NC
10
11
VIN
10
11
VREF
OVIN
OSCDIS
OSCIN
SHDN
AVDD_IN
20
19
18
17
16
AGND
1
15 PGND
NC
2
14 VEXT
AVDD_IN
3
NC
4
12 NC
VSIN
5
11 CS/VRAMP
EP
7
8
9
10
VSOUT
ISOUT
COMP
FB
ISIN
COMP
VSOUT
AVDD_OUT
13 PVDD
21
6
CS/VRAMP
20 Lead 4x4 QFN
MCP1631/MCP1631V
DS22063B-page 2
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
Typical Application Diagram
Multi-cell, Multi-Chemistry Charger
VIN Range +5.5V to +16V
L1A
CC
SCHOTTKY
DIODE
COUT
CIN
RTHERM
L1B
MCP1631HV
VEXT
VIN
CS
AVDD_OUT
PVDD
PGND
OSCIN
ISIN
ISOUT
OVIN
NC
VSIN
FB
VREF
NC
SHDN
COMP
OSCDIS
AGND
VSOUT
R
C
PIC12F683
VDD
GP1/C
CCP1
GP3
GP4
GP5
GND
GP0/C
AVDD_OUT
LED
© 2008 Microchip Technology Inc.
DS22063B-page 3
MCP1631/HV/MCP1631V/VHV
Functional Block Diagram(1)
MCP1631HV/VHV High Speed PIC PWM
Internal Regulator for MCP1631HV and MCP1631VHV
Options Only; For MCP1631 and MCP1631V AVDD_IN is input
+3.3V or +5.0V
LDO
250 mA
VIN
VDD
Internal
1.2V VREF
VDD
AVDD_OUT / AVDD_IN
Shutdown Control
A3 Remains On
SHDN
Overvoltage Comp
w/ Hysteresis
C2
+
OVIN
PVDD
OSCDIS
VDD
100 kΩ
0.1 µA
OT
OSCIN
VEXT
UVLO
S
VDD
PGND
Q
VDD
+
C1
-
COMP
Q
R
VDD
VDD
A1
+
2R
R
AGND
Remove for MCP1631V
and MCP1631VHV Options
R
ISIN
R
ISOUT
VDD
2.7V Clamp
A3
+
VREF
A2
+
FB
100 kΩ
10R
-
CS/VRAMP
VSIN
Note 1: For Shutdown control, amplifier A3 remains functional so
battery voltage can be sensed during discharge phase.
VSOUT
2: For HV options, internal Low Drop Out Regulator provides
+3.3V or +5.0V bias to VDD.
DS22063B-page 4
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings †
VIN - GND (MCP1631/V)................................................+6.5V
VIN - GND (MCP1631HV/VHV)....................................+18.0V
All Other I/O ..............................(GND - 0.3V) to (VDD + 0.3V)
LX to GND............................................. -0.3V to (VDD + 0.3V)
VEXT Output Short Circuit Current ........................ Continuous
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature ...................-40°C to +150°C
Operating Junction Temperature...................-40°C to +125°C
ESD Protection On All Pins:
HBM ................................................................................. 4 kV
MM ..................................................................................400V
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
VDD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Voltage (MCP1631/V)
VDD
3.0
—
5.5
V
Non-HV Options
Input Voltage
(MCP1631HV/VHV)
VDD
3.5
—
16.0
V
HV Options (Note 2)
UVLO
2.7
2.8
3.0
V
VIN Falling, VEXT low when input
below UVLO threshold
Undervoltage Lockout Hysteresis
(MCP1631/MCP1631V)
UVLO_HYS
40
64
100
mV
UVLO Hysteresis
Input Quiescent Current
(MCP1631/V, MCP1631HV,VHV)
I(VIN)
—
3.7
5
mA
SHDN = VDD =OSCDIS
IIN_SHDN
—
2.4
4.4
12
17
µA
µA
SHDN = GND =OSCDIS,
Note: Amplifier A3 remains
powered during Shutdown.
Input Characteristics
Undervoltage Lockout
(MCP1631/V)
Shutdown Current
I_AVDD for MCP1631/V
I_VIN for MCP1631HV/VHV
OSCIN, OSCDIS and SHDN Input Levels
Low Level Input Voltage
VIL
—
—
0.8
V
High Level Input Voltage
VIH
2.0
—
—
V
0.005
1
µA
—
—
2
MHz
—
10
—
ns
Input Leakage Current
ILEAK
External Oscillator Range
FOSC
Minimum Oscillator High Time
Minimum Oscillator Low Time
TOH_MIN.
TOL_MIN.
Oscillator Rise and Fall Time
TR and TF
0.01
—
10
µs
Oscillator Input Capacitance
COSC
—
5
—
pf
Note 1:
2:
3:
4:
5:
Maximum operating frequency is
dependent upon circuit topology
and duty cycle.
Note 1
External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device
characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%
of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and
specified that are not production tested.
The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)).
TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater.
© 2008 Microchip Technology Inc.
DS22063B-page 5
MCP1631/HV/MCP1631V/VHV
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
VDD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums.
Parameters
Sym
Min
Typ
Max
Units
Conditions
VREF
0
—
AVDD
V
The reference input is capable of
rail-to-rail operation.
RDSON P-channel
RDSon_P
—
7.2
15
Ω
RDSON N-channel
External Reference Input
Reference Voltage Input
Internal Driver)
RDSon_N
—
3.8
15
Ω
VEXT Rise Time
TRISE
—
2.5
18
ns
CL = 100 pF
Typical for VIN = 5V (Note 1)
VEXT Fall Time
TFALL
—
2.7
18
ns
CL = 100 pF
Typical for VIN = 5V (Note 1)
mV
Error Amplifier (A1)
Input Offset Voltage
VOS
-5
-0.6
+5
A1 Input Bias Current
IBIAS
—
0.05
1
µA
Error Amplifier PSRR
PSRR
—
85.4
—
dB
VCM
GND - 0.3
—
VIN
V
—
90
—
dB
VIN = 5V, VCM = 0V to 2.5V
AVOL
80
95
—
dB
RL = 5 kΩ to VIN/2,
100 mV < VEAOUT < VIN - 100 mV,
VCM = 1.2V
Common Mode Input Range
Common Mode Rejection Ratio
Open-loop Voltage Gain
VIN = 3.0V to 5.0V, VCM = 1.2V
VOL
—
25
GND + 65
mV
RL = 5 kΩ to VIN/2
GBWP
—
3.5
—
MHz
VIN = 5V
ISINK
4
12
—
mA
VIN = 5V, VREF = 1.2V,
VFB = 1.4V, VCOMP = 2.0V
ISOURCE
-2
-9.8
—
mA
VIN = 5V, VREF = 1.2V,
VFB = 1.0V, VCOMP = 2.0V,
Absolute Value
Input Offset Voltage
VOS
-3.0
1.2
+3.0
mV
CS Input Bias Current
IBIAS
—
0.13
1
µA
CS Amplifier PSRR
PSRR
—
65
—
dB
VIN = 3.0V to 5.0V, VCM = 0.12V,
GAIN = 10
Closed-loop Voltage Gain
A2VCL
—
10
—
V/V
RL = 5 kΩ to VIN/2,
100 mV < VOUT < VIN - 100 mV,
VCM = +0.12V
VOL
5
11
GND + 50
mV
RL = 5 kΩ to VIN/2
Low-level Output
Gain Bandwidth Product
Error Amplifier Sink Current
Error Amplifier Source Current
Current Sense (CS) Amplifier (A2)
Low-level Output
ISINK
5
17.7
—
mA
ISOURCE
-5
-19.5
—
mA
Input Offset Voltage
VOS
-5
0.9
+5
mV
VS Input Bias Current
IBIAS
—
0.001
1
µA
CS Sink Current
CS Amplifier Source Current
Voltage Sense (VS) Amplifier (A3)
Note 1:
2:
3:
4:
5:
External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device
characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%
of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and
specified that are not production tested.
The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)).
TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater.
DS22063B-page 6
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
VDD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums.
Parameters
Min
Typ
PSRR
—
VCM
GND
A3VCL
Low-level Output
VS Amplifier Sink Current
VS Amplifier PSRR
Sym
Max
Units
65
—
dB
VIN = 3.0V to 5.0V, VCM = 1.2V
—
AVDD
V
Rail to Rail Input
—
1
—
V/V
RL = 5 kΩ to VIN/2,
100 mV < VEAOUT < VIN - 100 mV,
VCM = 1.2V
VOL
—
38
GND + 85
mV
RL = 5 kΩ to VIN/2
ISINK
1
5
—
mA
ISOURCE
-2
-5
—
mA
VCS_MAX
0.85
0.9
0.98
V
VRAMP
2.7
2.78
2.9
V
VIN > 4V
Maximum CS input range limited
by comparator input common
mode range. VCS_MAX = VIN-1.4V
ICS_B
—
-0.1
—
µA
VIN = 5V
TCS_VEXT
—
8.5
25
ns
Note 1
DCMIN
—
—
0
%
VFB = VREF + 0.1V,
VCS = GND
V
Common Mode Input Range
Closed-loop Voltage Gain
VS Amplifier Source Current
Conditions
Peak Current Sense Input (C1)
Maximum Current Sense Signal
MCP1631/MCP1631HV
Maximum Ramp Signal
MCP1631V/MCP1631VHV
Current Sense Input Bias Current
Delay From CS to VEXT
MCP1631
Minimum Duty Cycle
Overvoltage Sense Comparator (C2)
OV Reference Voltage High
OV_VREF_H
—
1.23
—
OV Reference Voltage Low
OV_VREF_L
1.15
1.18
1.23
V
OV_HYS
—
50
—
mV
OV_IN Bias Current
OV_IBIAS
—
0.001
1
µA
Delay From OV to VEXT
TOV_VEXT
—
63
150
ns
C_OV
—
5
—
pF
OV Hysteresis
OV Input Capacitance
Overvoltage Comparator
Hysteresis
Delay from OV detection to PWM
termination (Note 1)
Internal Regulator HV Options Input / Output Characteristics
VIN
3.5
—
16.0
V
Maximum Output Current
IOUT_mA
250
—
—
mA
Output Short Circuit Current
IOUT_SC
—
400
—
mA
VOUT
VR-3.0%
VR±0.4%
VR+3.0%
V
TCVOUT
—
50
150
ppm/
°C
Input Operating Voltage
Output Voltage Regulation
VOUT Temperature Coefficient
Note 1:
2:
3:
4:
5:
Note 2
VIN = VIN(MIN) (Note 2),
VOUT = GND,
Current (average current)
measured 10 ms after short is
applied.
VR = 3.3V or 5.0V
Note 3
External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device
characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%
of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and
specified that are not production tested.
The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)).
TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater.
© 2008 Microchip Technology Inc.
DS22063B-page 7
MCP1631/HV/MCP1631V/VHV
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
VDD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Line Regulation
ΔVOUT/
(VOUTXΔ
VIN)
-0.3
±0.1
+0.3
%/V
(VOUT(MAX) + VDROPOUT(MAX)) ≤
VIN ≤ 16V Note 2
Load Regulation
ΔVOUT/
VOUT
-2.5
±1.0
+2.5
%
Dropout Voltage
Note 2, Note 5
VDROPOUT
—
330
650
mV
IL = 250 mA, VR = 5.0V
—
525
725
mV
IL = 250 mA, VR = 3.3V
TDELAY
—
1000
—
µs
VIN = 0V to 6V, VOUT = 90% VR,
RL = 50Ω resistive
eN
—
8
—
PSRR
—
44
—
dB
TSHD
—
150
—
°C
TSHD_HYS
—
18
—
°C
Output Delay Time
Output Noise
Power Supply Ripple Rejection
Ratio
IL = 1.0 mA to 250 mA, Note 4
µV/
IL = 50 mA, f = 1 kHz, COUT =
(Hz)1/2 1 µF
f = 100 Hz, COUT = 1 µF,
IL = 100 µA,
VINAC =100 mV pk-pk,
CIN = 0 µF, VR = 1.2V
Protection Features
Thermal Shutdown
Thermal Shutdown Hysteresis
Note 1:
2:
3:
4:
5:
External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device
characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%
of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and
specified that are not production tested.
The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)).
TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater.
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise indicated, all limits are specified for: VIN + 3.0V to 5.5V
Parameters
Sym
Min
Typ
Max
Units
Conditions
Operating Junction Temperature
Range
TJ
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Maximum Junction Temperature
TJ
—
—
+150
°C
Thermal Resistance, 20L-TSSOP
θJA
—
90
—
°C/W
Typical 4 Layer board with
interconnecting vias
Thermal Resistance, 20L-SSOP
θJA
—
89.3
—
°C/W
Typical 4 Layer board with
interconnecting vias
Thermal Resistance, 20L-QFN
θJA
—
43
—
°C/W
Typical 4 Layer board with
interconnecting vias
Temperature Ranges
Steady State
Transient
Package Thermal Resistances
DS22063B-page 8
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VIN for typical values = 5.0V, TA
for typical values = +25°C.
FIGURE 2-5:
vs. Temperature.
Ambient Temperature (°C)
FIGURE 2-3:
Temperature.
Input Quiescent Current vs.
© 2008 Microchip Technology Inc.
110
125
125
110
95
80
65
VDD = +3.0V
50
125
110
95
80
65
50
35
5
20
-10
-25
2.80
VDD = +3.3V
35
3.00
VDD = +4.0V
20
VDD = +3.0V
VDD = +5.5V
-10
3.20
Oscillator Input Threshold
VDD = +5.0V
-25
VDD = +4.0V
1.70
1.60
1.50
1.40
1.30
1.20
1.10
1.00
0.90
0.80
-40
OSC_DIS Input Threshold
Voltage (V)
VDD = +5.5V
VDD = +3.3V
-40
Input Quiescent Current (mA)
4.00
3.40
95
-40
Ambient Temperature (°C)
FIGURE 2-2:
Undervoltage Lockout
Hysteresis vs. Temperature.
3.60
80
1.00
Ambient Temperature (°C)
VDD = +5.0V
125
VDD = +3.0V
1.10
125
110
95
80
65
50
35
20
5
-10
-25
-40
0.061
1.20
65
0.062
VDD = +4.0V
VDD = +3.3V
50
0.063
1.30
35
0.064
VDD = +5.0V
1.40
5
0.065
VDD = +5.5V
1.50
20
0.066
1.60
-10
OSC_IN Input Threshold (V)
0.067
UVLO Hyst (V)
FIGURE 2-4:
Shutdown Current vs.
Temperature (MCP1631/MCP1631V).
-25
Undervoltage Lockout vs.
0.068
3.80
110
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-1:
Temperature.
95
-40
125
110
95
80
65
50
35
5
20
-10
-25
2.8
VDD = +3.3V
80
Device Turn Off
2.81
VDD = +3.0V
VDD = +4.0V
5
2.82
65
2.83
50
2.84
35
2.85
VDD = +5.0V
5
2.86
VDD = +5.5V
20
2.87
4.00
3.70
3.40
3.10
2.80
2.50
2.20
1.90
1.60
1.30
1.00
-10
Shutdown Current (µA)
Device Turn On
-25
2.88
-40
Undervoltage Lockout (V)
2.89
Ambient Temperature (°C)
FIGURE 2-6:
Oscillator Disable Input
Threshold vs. Temperature.
DS22063B-page 9
MCP1631/HV/MCP1631V/VHV
Typical Performance Curves (Continued)
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
VIN for typical values = 5.0V, TA for typical values = +25°C.
FIGURE 2-10:
Temperature.
A1 Offset Voltage (mV)
-0.60
-0.65
125
95
VDD = +3.0V
-0.70
VDD = +3.3V
-0.75
VDD = +4.0V
125
95
110
80
65
50
35
20
-40
5
-0.80
125
95
110
VDD = +4.0V
80
65
50
35
20
5
-10
-25
VDD = +5.5V
VDD = +5.0V
VDD = +5.0V
VDD = +5.5V
-10
VDD = +3.0V
-0.55
-25
VDD = +3.3V
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-8:
VEXT N-Channel Driver
RDSON vs. Temperature.
FIGURE 2-11:
vs. Temperature.
Amplifier A1 Offset Voltage
40
CL = 100 pF
35
A1 V OUT Low (mV)
VDD = +3.3V
VDD = +3.0V
VDD = +4.0V
VDD = +5.5V
VDD = +5.0V
VDD = +5.5V
30
25
VDD = +5.0V
20
VDD = +4.0V
15
10
VDD = +3.3V
5
VDD = +3.0V
FIGURE 2-9:
Temperature.
DS22063B-page 10
VEXT Rise Time vs.
125
110
95
80
65
50
35
5
20
-10
-25
-40
125
95
Ambient Temperature (°C)
110
80
65
50
35
20
5
-10
-25
0
-40
VEXT Rise Time (ns)
110
VEXT Fall Time vs.
-0.50
-40
EXT Output N-Channel
RDSON (ohms)
FIGURE 2-7:
VEXT P-Channel Driver
RDSON vs. Temperature.
4.7
4.4
4.1
3.8
3.5
3.2
2.9
2.6
2.3
2.0
80
Ambient Temperature (°C)
Ambient Temperature (°C)
6.6
6.2
5.8
5.4
5.0
4.6
4.2
3.8
3.4
3.0
65
VDD = +5.5V
-40
125
95
110
80
65
50
35
20
5
-10
-25
-40
4
VDD = +5.0V
50
VDD = +5.5V
VDD = +4.0V
VDD = +5.0V
VDD = +4.0V
35
6
VDD = +3.0V
5
8
VDD = +3.3V
20
VDD = +3.0V
10
CL = 100 pF
-10
VDD = +3.3V
5.0
4.7
4.4
4.1
3.8
3.5
3.2
2.9
2.6
2.3
2.0
-25
12
VEXT Fall Time (ns)
EXT Output P-Channel R
(ohms)
DSON
14
Ambient Temperature (°C)
FIGURE 2-12:
Amplifier A1 Output Voltage
Low vs. Temperature.
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
Typical Performance Curves (Continued)
18.8
17.6
16.4
15.2
14.0
12.8
11.6
10.4
9.2
8.0
18
VDD = +3.3V
FIGURE 2-13:
vs. Temperature.
Amplifier A1 Sink Current
35
FIGURE 2-16:
Amplifier A2 Output Voltage
Low vs. Temperature.
40
VDD = +5.5V
Amplifier A1 Source Current
1.6
A2 Source Current (mA)
1.4
1.2
VDD = +5.0V
VDD = +4.0V
0.8
VDD = +3.3V
0.6
FIGURE 2-17:
vs. Temperature.
125
Amplifier A2 Sink Current
26
VDD = +5.5V
1.0
110
-40
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-14:
vs. Temperature.
95
10
125
110
95
80
65
50
35
5
20
-10
-25
-40
5.0
VDD = +5.0V
15
80
VDD = +3.0V
VDD = +4.0V
20
65
VDD = +3.3V
6.5
25
50
8.0
VDD = +3.0V
35
VDD = +5.5V
9.5
VDD = +3.3V
30
20
11.0
35
5
VDD = +4.0V
-10
12.5
-25
VDD = +5.0V
A2 Sink Current (mA)
VDD = +3.0V
22
VDD = +3.3V
20
VDD = +5.0V
18
16
VDD = +5.5V
14
VDD = +3.0V
12
Ambient Temperature (°C)
FIGURE 2-15:
vs. Temperature.
Amplifier A2 Offset Voltage
© 2008 Microchip Technology Inc.
125
95
110
80
65
50
35
5
-10
-25
-40
125
110
95
80
65
50
35
20
5
-10
-25
10
-40
0.4
24
20
A1 Source Current (mA)
20
Ambient Temperature (°C)
14.0
A2 Offset Voltage (mV)
5
-10
-25
-40
Ambient Temperature (°C)
125
VDD = +3.0V
4
125
110
6
95
80
65
50
35
5
20
-10
-25
VDD = +5.5V
VDD = +4.0V
8
110
VDD = +5.0V
VDD = +5.0V
10
80
VDD = +4.0V
12
65
VDD = +3.3V
VDD = +5.5V
14
50
VDD = +3.0V
95
A2 V OUT Low (mV)
16
-40
A1 Sink Current (mA)
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
VIN for typical values = 5.0V, TA for typical values = +25°C.
Ambient Temperature (°C)
FIGURE 2-18:
vs. Temperature.
Amplifier A2 Source Current
DS22063B-page 11
MCP1631/HV/MCP1631V/VHV
Typical Performance Curves (Continued)
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
VIN for typical values = 5.0V, TA for typical values = +25°C.
7.0
A3 Source Current (mA)
VDD = +3.0V
4.5
VDD = +3.3V
4.0
Ambient Temperature (°C)
Ambient Temperature (°C)
DS22063B-page 12
Amplifier A3 Sink Current
125
95
80
65
35
50
125
110
95
65
50
80
125
110
95
80
125
95
110
80
65
50
35
20
5
-10
-25
-40
2.8
65
3.3
50
3.8
35
4.3
20
VDD = +3.0V to +5.5V
VDD = +5.0V
-25
5.8
2.790
2.788
2.786
2.784
2.782
2.780
2.778
2.776
2.774
2.772
2.770
-40
6.3
FIGURE 2-21:
vs. Temperature.
FIGURE 2-23:
MCP1631 and MCP1631HV
CS Maximum Voltage (V) vs. Temperature.
MCP1631V V RAMP Maximum
Voltage (V)
A3 Sink Current (mA)
6.8
4.8
5
Ambient Temperature (°C)
FIGURE 2-20:
Amplifier A3 Output Voltage
Low vs. Temperature.
5.3
VDD = +3.0V
VDD = +3.3V
-40
125
110
95
80
65
50
35
20
5
-10
-25
-40
0
35
VDD = +3.3V
VDD = +3.0V
10
VDD = +5.0V
VDD = +4.0V
20
30
VDD = +5.5V
5
40
Amplifier A3 Source Current
-10
VDD = +5.0V
VDD = +4.0V
0.920
0.918
0.916
0.914
0.912
0.910
0.908
0.906
0.904
0.902
0.900
-25
VDD = +5.5V
20
FIGURE 2-22:
vs. Temperature.
CS Max Threshold Voltage (V)
A3 V OUT Low (mV)
70
50
20
Ambient Temperature (°C)
Amplifier A3 Offset Voltage
60
110
Ambient Temperature (°C)
FIGURE 2-19:
vs. Temperature.
VDD = +4.0V
3.5
3.0
125
95
65
50
35
20
5
-40
0
-10
VDD = +3.0V
110
VDD = +3.3V
VDD = +5.5V
5.0
5
0.5
80
1
5.5
-10
VDD = +5.0V
VDD = +4.0V
VDD = +5.0V
6.0
-10
1.5
6.5
-25
VDD = +5.5V
-40
2
-25
A3 Offset Voltage (mV)
2.5
Ambient Temperature (°C)
FIGURE 2-24:
MCP1631V and
MCP1631VHV VRAMP Max Voltage (V).
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
Typical Performance Curves (Continued)
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
VIN for typical values = 5.0V, TA for typical values = +25°C.
1.7
0.9
VDD = +3.0V
Ambient Temperature (°C)
Ambinet Temperature (°C)
HV LDO Quiescent Current
(µA)
FIGURE 2-28:
Shutdown Input Voltage
Threshold (V) vs. Temperature.
VDD = +3.0V
VDD = +3.3V
VDD = +4.0V
6.00
5.00
VOUT = 5.0V
IOUT = 0 µA
0°C
4.00
+25°C
+90°C
2.00
1.00
6
8
10
HV LDO Quiescent Current
(µA)
VDD = +5.5V
VDD = +3.3V
0.060
0.050
0.040
VDD = +4.0V
0.030
VDD = +3.0V
0.020
VDD = +5.0V
0.010
Ambient Temperature (°C)
FIGURE 2-27:
Overvoltage Threshold
Hysteresis (V) vs. Temperature.
© 2008 Microchip Technology Inc.
125
110
95
80
65
50
35
20
5
-10
-25
0.000
-40
OV Threshold Hysteresis (V)
FIGURE 2-29:
Input Voltage.
0.080
0.070
12
14
16
18
Input Voltage (V)
Ambient Temperature (°C)
FIGURE 2-26:
Overvoltage Threshold
Low (V) vs. Temperature.
-45°C
+130°C
3.00
125
110
95
65
50
35
20
5
-10
-25
80
VDD = +5.5V
VDD = +5.0V
-40
OV Threshold Low (V)
FIGURE 2-25:
Overvoltage Threshold
High (V) vs. Temperature.
1.187
1.187
1.186
1.186
1.185
1.185
1.184
1.184
1.183
1.183
1.182
125
0.8
110
125
110
95
80
65
50
35
5
20
-10
-25
-40
VDD = +3.3V
1.0
95
VDD = +3.0V
1.2
1.1
80
1.21
VDD = +4.0V
1.2
65
VDD = +3.3V
1.22
VDD = +5.0V
1.3
50
1.23
1.4
35
1.24
1.5
5
1.25
VDD = +5.5V
1.6
20
VDD = +4.0V
VDD = +5.0V
-40
1.26
-10
VDD = +5.5V
-25
Shutdown Input Threshold
Voltage (V)
OV Threshold High (V)
1.27
LDO Quiescent Current vs.
3.00
IOUT = 0mA
VOUT = 1.2V
VIN = 2.7V
VOUT = 2.5V
VIN = 3.5V
2.50
2.00
1.50
1.00
VOUT = 5.0V
VIN = 6.0V
0.50
0.00
-45
-20
5
30
55
80
105
130
Junction Temperature (°C)
FIGURE 2-30:
LDO Quiescent Current vs.
Junction Temperature.
DS22063B-page 13
MCP1631/HV/MCP1631V/VHV
Typical Performance Curves (Continued)
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
VIN for typical values = 5.0V, TA for typical values = +25°C.
5.04
VIN = 6V
VOUT = 5.0V
+90°C
+130°C
5.02
5.00
4.98
4.96
0°C
-45°C
+25°C
4.94
0.18
Line Regulation (%/V)
Output Voltage (V)
5.06
4.92
0.16
VOUT = 5.0V
VIN = 6.0V to 16.0V
0.14
200 mA
250 mA
0.12
0.10
0 mA
100 mA
0.08
0.06
0
50
100
150
200
250
-45
-20
Load Current (mA)
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
LDO Output Voltage vs.
+130°C
-30
-40
VR=5.0V
VIN=6.0V
VINAC = 100 mV p-p
CIN=0 μF
IOUT=100 µA
-50
-60
-80
-90
0.01
75 100 125 150 175 200 225 250
Load Current (mA)
LDO Dropout Voltage vs.
VIN = 6V
0.40
VIN = 12V
0.20
VIN = 8V
-0.20
0.1
FIGURE 2-35:
1
10
Frequency (kHz)
100
1000
LDO PSRR vs. Frequency.
100
VOUT = 5.0V
IOUT = 1 to 250 mA
VIN = 16V
0.60
130
LDO Line Regulation vs.
-70
-45°C
1.00
Load Regulation (%)
PSRR (dB)
+0°C
0.80
105
-20
+25°C
50
80
-10
+90°C
25
55
0
FIGURE 2-32:
Load Current.
0.00
FIGURE 2-34:
Temperature.
VOUT = 5.0V
0
30
Temperature (°C)
VR = 5.0V, VIN = 6.0V
Noise (µV/ √Hz)
Dropout Voltage (V)
FIGURE 2-31:
Load Current.
5
IOUT = 50 mA
10
1
0.1
0.01
VIN = 14V
-0.40
-45
-20
5
30
55
80
105
130
0.001
0.01
Temperature (°C)
FIGURE 2-33:
Temperature.
DS22063B-page 14
LDO Load Regulation vs.
FIGURE 2-36:
Frequency.
0.1
1
10
Frequency (kHz)
100
1000
LDO Output Noise vs.
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
MCP1631/MCP1631V
MCP1631HV/
MCP1631VHV
TSSOP/SSOP
4x4
QFN
TSSOP/SSOP
1
15
1
2
16
3
17
4
3.1
Sym
PGND
Power ground return
2
SHDN
Shutdown input
3
OSCIN
External oscillator input
18
4
OSCDIS
Oscillator disable input
5
19
5
OVIN
Overvoltage comparator input
6
20
6
VREF
External voltage reference input
7
1
7
AGND
Quiet or analog ground
8,9,10
2,4,12
8,9
NC
No connection
—
—
10
VIN
High voltage input
11
3
—
AVDD_IN
—
—
11
5
12
AVDD_OUT Regulated VDD output
VSIN
Voltage sense amplifier (A3) input
13
6
13
ISIN
14
7
14
VSOUT
15
8
15
ISOUT
Current sense amplifier output
16
9
16
COMP
Error amplifier (A1) output
17
10
17
18
11
18
19
13
19
PVDD
20
14
20
VEXT
—
21
—
EP
FB
Power Ground (PGND)
Shutdown Input (SHDN)
Oscillator Input (OSCIN)
External Oscillator Input, used to set power train
switching frequency and maximum duty cycle, VEXT
enabled while low and disabled while high.
© 2008 Microchip Technology Inc.
Current sense input
Voltage sense amplifier output
Error amplifier inverting input (A1)
CS/VRAMP CS - current sense input; VRAMP voltage ramp input
Shutdown input logic low disables device and lowers IQ
to minimum value, amplifier A3 (VS) remains functional
for battery voltage sense applications.
3.3
Analog bias voltage input
12
Connect power ground return pin to power ground
plane, high peak current flows through the PGND during
the turn on and turn off the external MOSFET devices.
3.2
Description
Power VDD input
External driver output
Exposed Thermal Pad (EP); must be connected to AGND
3.4
Oscillator Disable (OSCDIS)
Oscillator disable input, used to asycnronously
terminate the VEXT duty cycle. Commonly used to
modulate current for LED driver applications.For
minimum shutdown IQ, connect OSCDIS to SHDN.
3.5
Overvoltage Input (OVIN)
Overvoltage Comparator input, connect to voltage
divider, internal comparator terminates VEXT output in
50 ns to limit output voltage to predetermined value.
3.6
External Reference Voltage Input
(VREF)
External Voltage Reference input, connect fixed or
variable external reference to VREF, with A1 configured
as an error amplifier, the power supply output variable
(voltage or current) will follow this input.
DS22063B-page 15
MCP1631/HV/MCP1631V/VHV
3.7
Analog Ground (AGND)
3.15
Current Sense Output (ISOUT)
Quiet or analog ground, connect to analog ground
plane to minimize noise on sensitive MCP1631
circuitry.
Current sense amplifier output, connect to error
amplifier (A1) inverting input (FB) to regulate SEPIC
output current.
3.8
3.16
No Connection (NC)
No connection.
3.9
Input Voltage (VIN)
High voltage input for MCP1631HV/MCP1631VHV
devices, operates from 3.5V to 16V input supply.
3.10
Analog supply Input (AVDD_IN)
Analog bias input, minimum 3.0V to 5.5V operation for
MCP1631/MCP1631V devices.
3.11
Analog Supply Output (AVDD_OUT)
Regulated VDD output used to power internal
MCP1631HV/MCP1631VHV and external
microcontroller, supplies up to 250 ma of bias current at
3.3V or 5.0V regulated low drop out rail.
3.12
Voltage Sense Input (VSIN)
Voltage sense amplifier (A3) input, connect to high
impedance battery voltage resistor divider to sense
battery voltage with minimal loading.
3.13
Current Sense Input (ISIN)
Connect to SEPIC secondary side sense resistor to
develop a regulated current source used to charge
multi-chemistry batteries.
3.14
Voltage Sense Output (VSOUT)
Voltage sense amplifier output, connect to
microcontroller analog to digital converter to measure
battery voltage.
DS22063B-page 16
Error Amplifier Output (COMP)
Error amplifier (A1) output, connect control loop
compensation from FB input to COMP output pin.
3.17
Feedback (FB)
Error amplifier input (A1), connect to current sense
output amplifier (A2) to regulate current.
3.18
Current Sense or Voltage Ramp
(CS/VRAMP)
For MCP1631/MCP1631HV applications, connect to
low side current sense of SEPIC switch for current
mode control and peak current limit. For MCP1631/
MCP1631HV application, connect artificial ramp
voltage to VRAMP input for voltage mode PWM control.
3.19
Power VDD (PVDD)
Power VDD input, VEXT gate drive supply input, connect
to +5.0V or +3.3V supply for driving external MOSFET.
3.20
External Driver (VEXT)
High current driver output used to drive external
MOSFET at high frequency, capable of 1A peak
currents with +5.0V PVDD.
3.21
Exposed PAD 4x4 QFN (EP)
There is an internal electrical connection between the
Exposed Thermal Pad (EP) and the AGND pin; they
must be connected to the same potential on the Printed
Circuit Board (PCB).
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
4.0
DETAILED DESCRIPTION
4.1
Device Overview
The MCP1631/MCP1631V device family combines the
analog functions to develop high frequency switch
mode power systems while integrating features for
battery charger and LED current source applications.
With the integration of a MOSFET driver, voltage
sense, current sense and over voltage protection, the
MCP1631/MCP1631V is a highly integrated, highspeed analog pulse width modulator.
The MCP1631/MCP1631V output (VEXT) is used to
control the switch of the power system (on and off
time). By controlling the switch on and off time, the
power system output can be regulated. With the
oscillator and reference voltage as inputs, a simple
interface to a microcontroller is available with the
MCP1631/MCP1631V to develop intelligent power
systems. A good example of an intelligent power
system is a battery charger, programmable LED driver
current source or programmable power supply.
The MCP1631/MCP1631V is a combination of
specialty analog blocks consisting of a Pulse Width
Modulator (PWM), MOSFET Driver, Current Sense
Amplifier (A2), Voltage Sense Amplifier (A3),
Overvoltage Comparator (C2) and additional features
(Shutdown, Undervoltage Lockout, Overtemperature
Protection). For the HV options, an internal low dropout
regulator is integrated for operation from high voltage
inputs (MCP1631HV/MCP1631VHV).
4.2
Pulse Width Modulator (PWM)
The internal PWM of the MCP1631/MCP1631V is
comprised of an error amplifier, high-speed comparator
and latch. The output of the amplifier is compared to
either the MCP1631 CS (primary current sense input)
or the MCP1631V VRAMP (voltage mode ramp input) of
the high speed comparator. When the CS or VRAMP
signal reach the level of the error amplifier output, the
on cycle is terminated and the external switch is
latched off until the beginning of the next cycle (high to
low transition of OSCIN).
4.3
VEXT MOSFET Driver
The MCP1631/MCP1631V output can be used to drive
the external MOSFET directly for low side topology
applications. The VEXT is capable of sourcing up to
700 mA and sinking up to 1A of current from a PVDD
source of 5V. Typical output power using the VEXT
output to directly drive the external MOSFET can
exceed 50W depending upon application and switching
frequency.
© 2008 Microchip Technology Inc.
4.4
Current Sense Amplifier (A2)
The A2 current sense amplifier is used to sense current
in the secondary side of a SEPIC converter or
freewheeling current in a Buck converter. The inverting
amplifier has a built in voltage gain of ten with low offset
and high speed.
4.5
Voltage Sense Amplifier (A3)
The A3 voltage sense amplifier is used to sense battery
voltage. In battery powered applications, it is important
to minimize the steady stage load current draw on the
battery. The voltage sense amplifier (A3) is used to
buffer a high impedance series divider used to reduce
the battery pack voltage to a level that can be read
using an analog to digital converter. The voltage sense
amplifier draws a very low quiescent current and
remains functional when the MCP1631/MCP1631V is
shutdown making it possible to read battery voltage
without turning on the charger.
4.6
Overvoltage Comparator(C2)
The C2 overvoltage comparator is used to prevent the
power system from being damaged when the load
(battery) is disconnected. By comparing the divided
down power train output voltage with a 1.2V internal
reference voltage, the MCP1631/MCP1631V VEXT
output switching is interrupted when the output voltage
is above a pre-set value. This limits the output voltage
of the power train, the 0V comparator’s hysteresis will
operate as a ripple regulator.
4.7
Shutdown Input
The MCP1631/MCP1631V shutdown feature is used to
disable the device with the exception of the voltage
sense amplifier A3 to minimize quiescent current draw.
While shutdown, A3 remains operational while the
device draws 4.4 µA from the input.
4.8
Protection
The MCP1631/MCP1631V has built in Undervoltage
Lockout (UVLO) that ensures the output VEXT pin is
forced to a known state (low) when the input voltage or
AVDD is below the specified value. This prevents the
main MOSFET switch from being turned on during a
power up or down sequence.
The MCP1631/MCP1631V provides a thermal
shutdown protection feature, if the internal junction
temperature of the device becomes high, the
overtemperature protection feature will disable (pull the
VEXT output low) and shut down the power train.
DS22063B-page 17
MCP1631/HV/MCP1631V/VHV
NOTES:
DS22063B-page 18
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
5.0
APPLICATION INFORMATION
5.1
Typical Applications
The MCP1631/MCP1631V can be used to develop
intelligent power management solutions, typical
applications include a multi-chemistry battery charger
used to charge Li-Ion, NiMH or NiCd batteries and
constant current LED drivers.
5.2
Battery Charger Design Overview
The design approach for developing high current
switching battery chargers using the MCP1631 is
described in this section. Depending on input voltage
range, there are two versions of the device that can be
used to accommodate a very wide range of input
voltages.
For a regulated input voltage range of 5V, the
MCP1631/MCP1631V device is used, for this input
voltage application (regulated ac-dc converter or USB
input), the MCP1631/MCP1631V is powered directly
from the 5V dc input.
For input voltages to +16V steady state with +18V
transients, the MCP1631HV/MCP1631VHV, or high
voltage option can be used. The high voltage devices
integrate a low dropout (LDO) linear regulator with a set
output voltage of +3.3V or +5.0V that internally powers
the MCP1631HV/MCP1631VHV and is also capable of
providing 250 mA of bias current for the attached
microcontroller and other circuitry. MCP1631HV/
MCP1631VHV internal power dissipation must be
considered when loading the internal LDO regulator.
For higher input voltages the MCP1631/MCP1631V
can be biased from an external regulated +3.0V to
+5.5V supply.
5.3
Programmable Single Ended
Primary Inductive (SEPIC) Current
Source
The MCP1631/MCP1631V family integrates features
that are necessary to develop programmable current
sources. The SEPIC converter is commonly used in
battery charger applications. The primary or input
inductor is used to filter input current and minimize the
switching noise at the converter input. The primary to
secondary capacitive isolation blocks any dc path from
input to output making the SEPIC safer than Buck or
other non-isolated topologies. The SEPIC rectifier
blocks the reverse path preventing battery leakage, in
other topologies an additional diode for blocking is
necessary adding additional components and
efficiency loss.
The input or primary inductor and output or secondary
inductor are typically constructed from a single
magnetic device with two windings, this is commonly
referred to as a coupled inductor. Using coupled
© 2008 Microchip Technology Inc.
inductors has significant advantages in addition to the
size and cost benefits of a single core with multiple
windings.
5.4
Mixed Signal Design
For intelligent battery charger design, a microcontroller
is used to generate the proper charge profile, charge
termination, safety timers and battery charger features.
When using the MCP1631/MCP1631V for Li-Ion
battery charger applications, the microcontroller is also
used to generate the constant voltage regulation phase
of the charge cycle. This is accomplished by using the
external reference feature of the MCP1631/MCP1631V
as a programmable current source. The microcontroller
is used to vary the VREF input of the MCP1631/
MCP1631V. The charge current into the battery is
regulated by the MCP1631/MCP1631V, the level that it
is regulated to is set by the programmability of the
microcontroller.
The internal MCP1631/MCP1631V analog components are used to regulate the microcontroller
programmed current. The secondary or battery current
is sensed using amplifier A2, the output of A2 is feed
into the input of the error amplifier A1, the output of A1
sets the peak switch current of the SEPIC converter, it
increases or decreases the battery current to match its
(A1) inputs. By increasing the VREF or non-inverting
input of A1, the battery current is increased.
5.5
Safety Features
The MCP1631/MCP1631V integrates a high-speed
comparator used to protect the charger and battery
from being exposed to high voltages if the battery is
removed or opens. Comparator C2 is used to sense the
SEPIC output voltage. If the divided down output
voltage becomes higher than the 1.2V internal
MCP1631/MCP1631V reference, the VEXT PWM
output is terminated within 50 ns preventing the build
up of voltage on the SEPIC output.
Peak switch current is limited by the MCP1631/
MCP1631V comparator C1 and error amplifier A1
output voltage clamp. For the MCP1631, the error
amplifier output is clamped at 2.7V. The A1 output is
divided down by 1/3 and compared with CS (current
sense) input. The VEXT output is turned off if the CS
input reaches a level of 1/3 of 2.7V or 0.9V in 12 ns,
preventing the external switch current from becoming
high enough to damage the SEPIC power train.
Internal overtemperature protection limits the device
junction temperature to 150°C preventing catastrophic
failure for overtemperature conditions. Once the
temperature decreases 10°C, the device will resume
normal operation.
Safety timers are typically used to limit the amount of
energy into a faulted battery or pack. This is
accomplished using the microcontroller and MCP1631/
MCP1631V shutdown feature.
DS22063B-page 19
MCP1631/HV/MCP1631V/VHV
5.6
OSC Disable Feature
The oscillator disable or OSC_DIS input is used to
asychronously terminate the PWM VEXT output. This
can be used with a slow PWM input to modulate current
into an LED for lighting applications.
Multi-cell Multi-Chemistry Charger
VIN Range +4.5V to +5.5V
L1A
CC
SCHOTTKY
DIODE
COUT
CIN
L1B
MCP1631
VEXT
NC
AVDD_IN
PVDD
RTHERM
CS
PGND
OSCIN
ISIN
ISOUT
OVIN
NC
VSIN
FB
VREF
NC
SHDN
COMP
OSCDIS
AGND
VSOUT
R
C
PIC12F683
VDD
GP1/C
CCP1
GP3
GP4
GP5
GND
GP0/C
AVDD_OUT
LED
FIGURE 5-1:
DS22063B-page 20
+5V ac-dc or USB Input Application.
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
Multi-cell Multi-Chemistry Charger
VIN Range +5.5V to +16V
L1A
CC
SCHOTTKY
DIODE
L1B
MCP1631HV
VEXT
VIN
AVDD_OUT
PVDD
RTHERM
COUT
CIN
CS
PGND
OSCIN
ISIN
ISOUT
OVIN
NC
VSIN
FB
VREF
NC
SHDN
COMP
OSCDIS
AGND
VSOUT
R
C
PIC12F683
VDD
GP1/C
CCP1
GP3
GP4
GP5
GND
GP0/C
AVDD_OUT
LED
FIGURE 5-2:
+5.5V to +16.0V Input.
© 2008 Microchip Technology Inc.
DS22063B-page 21
MCP1631/HV/MCP1631V/VHV
Multi-cell Multi-Chemistry Charger
VIN Range +6V to +40V
CIN
+5V
L1A
HV
Regulator
CC
SCHOTTKY
DIODE
COUT
COUT
RTHERM
L1B
MCP1631
VEXT
NC
AVDD_IN
PVDD
CS
PGND
OSCIN
ISIN
ISOUT
OVIN
NC
VSIN
FB
VREF
NC
SHDN
COMP
OSCDIS
AGND
VSOUT
R
C
PIC12F683
VDD
GP1/C
CCP1
GP3
GP4
GP5
GND
GP0/C
AVDD_OUT
LED
FIGURE 5-3:
DS22063B-page 22
Wide Range High Voltage Input.
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
6.0
PACKAGING INFORMATION
6.1
Package Marking Information (Not to Scale)
20-Lead 4x4 QFN (MCP1631/MCP1631V)
Example:
XXXXX
XXXXXX
XXXXXX
YWWNNN
1631
e3
E/ML^^
0822
256
20-Lead SSOP (All Devices)
Example:
XXXXXXXXXXX
XXXXXXXXXXX
YYWWNNN
20-Lead TSSOP (All Devices)
Example:
XXXXXXXX
XXXXXNNN
YYWW
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
1631V
e3
EST^^
0822256
1631HV33
e3
EST^^256
0822
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2008 Microchip Technology Inc.
DS22063B-page 23
MCP1631/HV/MCP1631V/VHV
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DS22063B-page 24
© 2008 Microchip Technology Inc.
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© 2008 Microchip Technology Inc.
DS22063B-page 25
MCP1631/HV/MCP1631V/VHV
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DS22063B-page 26
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
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© 2008 Microchip Technology Inc.
DS22063B-page 27
MCP1631/HV/MCP1631V/VHV
NOTES:
DS22063B-page 28
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
APPENDIX A:
REVISION HISTORY
Revision B (October 2008)
The following is the list of modifications:
1.
2.
3.
Section 2.0 “Typical Performance Curves”,
Input Offset Voltage: changed minimum, typical,
maximum from -0.6, -, +0.6 to -5, -0.6, +5,
respectively;
Updated Section 6.0 “Packaging Information”;
Updated the Product Identification System.
Revision A (October 2007)
• Original Release of this Document.
© 2008 Microchip Technology Inc.
DS22063B-page 29
MCP1631/HV/MCP1631V/VHV
NOTES:
DS22063B-page 30
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
-XXX
X
Voltage Temperature
Options
Range
/XX
Package
Examples:
a)
MCP1631-E/ML:
b)
MCP1631-E/SS:
High-Speed PWM
High-Speed PWM
Tape and Reel
MCP1631HV: High-Speed PWM
MCP1631HVT: High-Speed PWM
Tape and Reel
MCP1631HV: High-Speed PWM
MCP1631HVT: High-Speed PWM
Tape and Reel
MCP1631VHV: High-Speed PWM
MCP1631VHVT: High-Speed PWM
Tape and Reel
c)
MCP1631-E/ST:
a)
Voltage options
330
500
c)
Temperature Range
E
MCP1631HV-330E/SS:High Speed PWM,
Current Mode Control,
3.3V Internal Regulator,
20LD SSOP Package.
MCP1631HV-500E/SS: High Speed PWM,
Current Mode Control,
5.0V Internal Regulator,
20LD SSOP Package.
MCP1631HV-500E/ST:High Speed PWM,
Current Mode Control,
5.0V Internal Regulator,
20LD TSSOP Package.
Package
ML
SS
ST
Device
MCP1631:
MCP1631T:
=
=
=
3.3V
5.0V
b)
-40°C to +125°C
a)
= Plastic Quad Flat, No Lead (4x4x0.9), 20-lead
= Plastic Shrink Small Outline (5.30 mm), 20-lead
= Plastic Thin Shrink Small Outline (4.4 mm),
20-Lead
* All package offerings are Pb Free (Lead Free)
b)
c)
© 2008 Microchip Technology Inc.
High-Speed PWM,
20LD QFN package.
High-Speed PWM,
20LD SSOP package.
High-Speed PWM,
20LD TSSOP package.
MCP1631VHVT-500E/ST:High Speed PWM,
Voltage Mode Control,
5.0V Internal Regulator,
20LD TSSOP Package.
MCP1631VHV-330E/SS: High Speed PWM,
Voltage Mode Control,
3.3V Internal Regulator,
20LD SSOP Package.
MCP1631VHV-330E/ST:High Speed PWM,
Voltage Mode Control,
3.3V Internal Regulator,
20LD TSSOP Package.
DS22063B-page 31
MCP1631/HV/MCP1631V/VHV
NOTES:
DS22063B-page 32
© 2008 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, rfPIC, SmartShunt and UNI/O are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
FilterLab, Linear Active Thermistor, MXDEV, MXLAB,
SEEVAL, SmartSensor and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, In-Circuit Serial
Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, PICkit, PICDEM,
PICDEM.net, PICtail, PIC32 logo, PowerCal, PowerInfo,
PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total
Endurance, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2008, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2008 Microchip Technology Inc.
DS22063B-page 33
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
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Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-4182-8400
Fax: 91-80-4182-8422
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
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Tel: 81-45-471- 6166
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Tel: 49-89-627-144-0
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Fax: 82-53-744-4302
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Tel: 852-2401-1200
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Fax: 82-2-558-5932 or
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Fax: 63-2-634-9069
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Fax: 86-24-2334-2393
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Hsin Chu
Tel: 886-3-572-9526
Fax: 886-3-572-6459
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-536-4803
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
01/02/08
DS22063B-page 34
© 2008 Microchip Technology Inc.