NB3N3002 3.3V, Crystal-to-HCSL Clock Generator Description The NB3N3002 is a high precision, low phase noise clock generator that supports PCI−Express and Ethernet requirements. The device takes a 25 MHz fundamental mode parallel resonant crystal and generates differential HCSL output at 25 MHz, 100 MHz, 125 MHz or 200 MHz clock frequencies. Outputs can interface with LVDS with proper termination (See Figure 5). This device is housed in 5.0 mm x 4.4 mm narrow body TSSOP 16 pin package. • • • MARKING DIAGRAM 16 16 1 Features • • • • • http://onsemi.com TSSOP−16 DT SUFFIX CASE 948F Uses 25 MHz Fundamental Mode Parallel Resonant Crystal External Loop Filter is Not Required HCSL Differential Output or LVDS with Proper Termination Typical TIE RMS jitter of 2.5 ps Jitter or Low Phase Noise: Offset Noise Power 100 Hz −103 dBc 1 kHz −118 dBc 10 kHz −122 dBc 100 kHz −130 dBc 1 MHz −132 dBc 10 MHz −149 dBc Operating Range 3.3 V ±5% Industrial Temperature Range −40°C to +85°C These are Pb−Free Devices A L Y W G 1 NB3N 3002 ALYWG G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. VDD X1/CLK 25 MHz Clock or Crystal X2 Clock Buffer Crystal Oscillator Charge Pump Phase Detector CLK HSCL Output VCO CLK BN GND SEL0 SEL1 OE IREF Figure 1. NB3N3002 Simplified Logic Diagram © Semiconductor Components Industries, LLC, 2010 June, 2010 − Rev. 2 1 Publication Order Number: NB3N3002/D NB3N3002 SEL0 1 16 VDD SEL1 2 15 CLK GND 3 14 CLK X1/CLK 4 13 GND X2 5 12 VDD OE 6 11 NC GND 7 10 NC GND 8 9 IREF Figure 2. Pin Configuration (Top View) Table 1. PIN DESCRIPTION Pin Symbol I/O Description 1 Sel0 Input LVTTL/LVCMOS frequency select input 0. Internal pullup resistor to VDD. See output select table 2 for details. 2 Sel1 Input LVTTL/LVCMOS frequency select input 1. Internal pullup resistor to VDD. See output select Table 2 for details. 12, 16 VDD Power Supply 4 X1/CLK Input Crystal or Clock input. Connect to 25 MHz crystal source or single−ended clock. 5 X2 Input Crystal input. Connect to a 25 MHz crystal or leave unconnected for clock input. 6 OE Input Output enable tri−states output when connected to GND. Internal pullup resistor to VDD. 3, 7, 8, 13 GND Power Supply 9 IREF Output 15 CLK HCSL or LVDS Output Noninverted clock output. (For LVDS levels see Figure 5) 14 CLK HCSL or LVDS Output Inverted clock output. (For LVDS levels see Figure 5) 10,11 NC Positive supply voltage pins are connected to +3.3 V supply voltage. Ground 0 V. These pins provide GND return path for the devices. Output current reference pin. Precision resistor (typ. 475 W) is connected from pin 9 to GND to set the output current. Do not connect Recommended Crystal Parameters Table 2. OUTPUT FREQUENCY SELECT TABLE Sel1 Sel0 fCLKout (MHz) L L 25 L H 100 H L 125 H H 200 Crystal Frequency Load Capacitance Shunt Capacitance, C0 Equivalent Series Resistance Initial Accuracy at 25 °C Temperature Stability Aging C0/C1 Ration http://onsemi.com 2 Fundamental AT−Cut 25 MHz 16−20 pF 7 pF Max 35 W Max ±20 ppm ±30 ppm ±20 ppm 250 Max NB3N3002 Table 3. ATTRIBUTES Characteristic ESD Protection Value Human Body Model > 2 kV Moisture Sensitivity, Indefinite Time Out of Dray Pack (Note 1) Flammability Rating Level 1 Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Transistor Count 7623 Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 1. For additional information, see Application Note AND8003/D. Table 4. MAXIMUM RATINGS (Note 2) Symbol Parameter Condition 1 Condition 2 Rating Units 4.6 V −0.5 V to VDD+0.5 V V −40 to +85 °C VDD Positive Power Supply GND = 0 V VI Input Voltage (VIN) GND = 0 V TA Operating Temperature Range Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm TSSOP–16 TSSOP–16 138 108 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) (Note 3) TSSOP−16 33 to 36 °C/W Tsol Wave Solder 265 °C GND v VI v VDD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously. If stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected. 3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power). Table 5. DC CHARACTERISTICS (VDD = 3.3 V ±5%, GND = 0 V, TA = −40°C to +85°C) Symbol Max Unit IDD Power Supply Current (Note 4) Characteristic Min 65 Typ 95 mA IDDOE Power Supply Current when OE is Set Low 35 65 mA VIH Input HIGH Voltage (X1/CLK, Sel0, Sel1,and OE) 0.7 * VDD VDD + 300 mV VIL Input LOW Voltage (X1/CLK, Sel0, Sel1, and OE) GND − 300 0.3* VDD mV VOH Output HIGH Voltage (See Figure 4) 660 700 850 mV VOL Output LOW Voltage (See Figure 4) −150 0 150 mV Vcross Crossing Voltage Magnitude (Absolute) 250 400 mV DVcross Change in Magnitude of Vcross 150 mV NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 4. NB3N circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained. 5. Measurement taken with outputs terminated with RS = 33.2 W, RL = 49.9 W, with load capacitance of 2 pF and current biasing resistor, RREF, from IREF (Pin 9) to GND of 475 W. See Figure 3. http://onsemi.com 3 NB3N3002 Table 6. Table 5. AC CHARACTERISTICS (VDD = 3.3 V ±5%, GND = 0 V, TA = −40°C to +85°C; Note 7) Symbol fCLKIN Characteristic Min Clock/Crystal Input Frequency fCLKOUT Output Clock Frequency WNOISE Phase−Noise Performance Tjitter (TIE) OE Typ 25 Unit MHz 200 MHz dBc/Hz fCLKout = 200 MHz @ 100 Hz offset from carrier −103 @ 1 kHz offset from carrier −118 @ 10 kHz offset from carrier −122 @ 100 kHz offset from carrier −130 @ 1 MHz offset from carrier −138 @ 10 MHz offset from carrier −149 ps TIE RMS Jitter (Note 8) fCLKout = 200 MHz 2.5 Cycle−to−Cycle RMS Jitter (Note 9) fCLKout = 200 MHz 2 5 Cycle−to−Cycle Peak to Peak Jitter (Note 9) fCLKout = 200 MHz 20 35 Period RMS Jitter (Note 9) fCLKout = 200 MHz 1.5 3 Period Peak−to−Peak Jitter (Note 9) fCLKout = 200 MHz 10 20 Output Enable/Disable Time tDUTY_CYCLE Max 25 1.0 ms Output Clock Duty Cycle (Measured at cross point) 45 50 55 % tR Output Risetime (Measured from 175 mV to 525 mV, Figure 4) 175 340 700 ps tF Output Falltime (Measured from 525 mV to 175 mV, Figure 4) 175 340 700 ps DtR Output Risetime Variation (Single−Ended) 125 ps DtF Output Falltime Variation (Single−Ended) 125 ps NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 6. NB3N circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained. 7. Measurement taken from differential output on single−ended channel terminated with RS = 33.2 W, RL = 49.9 W, with load capacitance of 2 pF and current biasing resistor, RREF, from IREF (Pin 9) to GND of 475 W. See Figures 3 and 4. 8. Sampled with 20000 cycles to capture jitter component down to 100 kHz. 9. Sampled with 20000 cycles. RL = 33.2 W HCSL Driver Zo = 50 W RL = 33.2 W Receiver Zo = 50 W RL = 49.9 W IREF RREF = 475 W RL = 49.9 W Figure 3. Typical Termination for Output Driver and Device Evaluation http://onsemi.com 4 NB3N3002 700 mV 525 mV 525 mV 175 mV 175 mV 0 mV tR 340 ps 340 ps tF Figure 4. HCSL Output Parameter Characteristics HCSL Driver Qx Zo = 50 W 100 W Qx 100 W Zo = 50 W RL = 150 W LVDS Receive RL = 150 W Figure 5. HCSL Interface Termination to LVDS ORDERING INFORMATION Package Shipping† NB3N3002DTG TSSOP−16 (Pb−Free) 96 Units / Rail NB3N3002DTR2G TSSOP−16 (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NB3N3002 PACKAGE DIMENSIONS TSSOP−16 CASE 948F−01 ISSUE B 16X K REF 0.10 (0.004) 0.15 (0.006) T U T U M S V S K S ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ K1 2X L/2 16 9 J1 B −U− L SECTION N−N J PIN 1 IDENT. N 8 1 0.25 (0.010) M 0.15 (0.006) T U S A −V− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. N DIM A B C D F G H J J1 K K1 L M F DETAIL E −W− C 0.10 (0.004) −T− SEATING PLANE D H G DETAIL E MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ SOLDERING FOOTPRINT* 7.06 1 0.65 PITCH 16X 0.36 16X 1.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ NB3N3002 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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