PAM8303D Ultra Low EMI, 3W Filterless Mono Class-D Audio Power Amplifier Key Features General Description n Ultra Low EMI, -20dB Better Than FCC Class-B @ 300MHz n High Efficiency up to 90% @1W with an 8 Ω Speaker n Shutdown Current <1 μ A n 3W@10% THD Output with a 4 Ω Load at 5V Supply n Demanding Few External Components n Superior Low Noise without Input n Supply Voltage from 2.8V to 5.5 V n Short Circuit Protection n Thermal Shutdown n Available in Space Saving Packages: 1.45mmx1.45mm WCSP9, MSOP-8, DFN 3x3 n Pb-Free Package The PAM8303D is a 3W mono filterless class-D amplifier with high PSRR and differential input that eliminate noise and RF rectification. Features like 90% efficiency and small PCB area make the PAM8303D class-D amplifier ideal for cellular handsets. The filterless architecture requires no external output filter, fewer external components, less PCB area and lower system costs, and simplifies application design. The PAM8303D features short circuit protection and thermal shutdown. The PAM8303D is available in 9-ball WCSP, MSOP-8 and DFN 3x3 8-pin packages. Applications n n n n n n Level (dBuV/m) Cellular Phones/Smart Phones MP4/MP3 GPS Digital Photo Frame Electronic Dictionary Portable Game Machines FCC Class B 80 70 60 50 40 30 20 10 0 30.00 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 ( MHz) EMI vs Frequency Typical Application Circuit Power in to PVDD pin to VDD pin 1μF Ci VDD Ri 10μF 1μF PVDD 1μF VDD Ci IN- IN 1μF PVDD Ri IN- IN- OUTSingle-ended Input Ci OUTDifferential Input PAM8303D Ri IN+ IN+ OUT+ ON OFF OFF GND Ri IN+ ON SD Ci PAM8303D OUT+ SD GND Power Analog Microelectronics , Inc 09/2008 Rev 1.4 www.poweranalog.com 1 PAM8303D Ultra Low EMI, 3W Filterless Mono Class-D Audio Power Amplifier Block Diagram VDD IN+ PWM Modulator + IN- SD SD Bias and Vref OSC PVDD Gate Drive OUT+ Gate Drive OUT- UVLO SC Protect Startup Protection OTP GND Pin Configuration & Marking Information 9 Ball WCSP Top View IN+ GND OUT- A1 A2 A3 VDD PVDD GND B1 B2 B3 IN- SD OUT+ C1 C2 C3 Marking BC YW BC: Product Code of PAM8303D Y: Year W: Week Power Analog Microelectronics , Inc 09/2008 Rev 1.4 www.poweranalog.com 2 PAM8303D Ultra Low EMI, 3W Filterless Mono Class-D Audio Power Amplifier Pin Configuration & Marking Information DFN Top View 1 2 3 8 P8303D XXXXYW 4 X: Internal Code Y: Year W: Week 7 6 5 MSOP-8 Top View 1 8 P8303D XXXXYW 2 3 7 6 5 4 Pin Number 1 Pin name OUT+ Description 2 PVDD 3 VDD 4 IN- Negative differential input 5 IN+ Positive differential input 6 SD Shutdown terminal ,active low 7 GND Ground 8 OUT- Negative BTL output Positive BTL output Power supply Analog power supply Power Analog Microelectronics , Inc 09/2008 Rev 1.4 www.poweranalog.com 3 PAM8303D Ultra Low EMI, 3W Filterless Mono Class-D Audio Power Amplifier Absolute Maximum Ratings These are stress ratings only and functional operation is not implied . Exposure to absolute maximum ratings for prolonged time periods may affect device reliability . All voltages are with respect to ground . Supply Voltage . ...........................................6.6V Input Voltage.............................-0.3V to V DD+0.3V Junction Temperature....................-40 °C to 125 °C Storage Temperature.....................-65°C to 150 °C Soldering Temperature.................... 250°C,10 sec Recommended Operating Conditions Supply voltage Range........................ 2.8V to 5.5V Max. Supply Voltage (for Max. duration of 30 minutes)................................................6.4V Ambient Operation Temperature.......-20 °C to 85 °C Thermal Information Parameter Thermal Resistance (Junction to ambient) Thermal Resistance (Junction to case) Symbol Package Maximum Unit WCSP 1.45x1.45 90-220 °C/W MSOP 180 °C/W DFN 3x3 47.9 °C/W MSOP 40 °C/W DFN 3x3 NA °C/W θJA θJC Note: For the 9-pin CSP package, the thermal resistance is highly dependent on the PCB heat sink area. For example, the θ ja can equal to 195 °C /W with 50mm 2 total area or 135 °C /W with 500mm 2 area. When using ground and power planes, the value is around 90 °C /W. Power Analog Microelectronics , Inc 09/2008 Rev 1.4 www.poweranalog.com 4 PAM8303D Ultra Low EMI, 3W Filterless Mono Class-D Audio Power Amplifier Electrical Characteristic T A=25 ° C, V DD=5V, Gain=2V/V, R L=L(33 μ H)+R+L(33 μ H), unless otherwise noted . Symbol VDD Parameter Test Conditions Supply Voltage THD+N=1%,f=1kHz, R=4Ω Output Power THD+N=10%,f=1kHz, R=8Ω THD+N=1%,f=1kHz, R=8Ω V DD =5.0V 2.85 3.0 V DD =3.6V 1.65 1.8 V DD =3.2V 1.20 1.35 V DD =5.0V 2.50 2.66 V DD =3.6V 1.15 1.3 V DD =3.2V 0.85 1 V DD =5.0V 1.65 1.8 V DD =3.6V 0.75 0.9 V DD =3.2V 0.55 0.7 V DD =5.0V 1.3 1.5 V DD =3.6V 0.55 0.72 V DD =3.2V 0.40 0.55 V DD=5.0V,Po=1W,R=8Ω VDD=3.6V,Po=0.1W,R=8Ω THD+N f=1kHz UNIT 5.5 V W W W W 0.28 0.35 0.4 0.45 VDD=3.2V,Po=0.1W,R=8Ω 0.55 0.6 Distortion Plus Noise VDD=5.0V,Po=0.5W,R=4Ω 0.2 0.25 0.35 0.4 0.5 0.55 f=217Hz -63 -55 f=1kHz -62 -55 f=10kHz -52 -40 f=1kHz VDD=3.2V,Po=0.1W,R=4Ω Power Supply Ripple Rejection Dyn Dynamic Range Vn Output Noise CMRR MAX Total Harmonic VDD=3.6V,Po=0.2W,R=4Ω PSRR TYP 2.8 THD+N=10%,f=1kHz, R=4Ω Po MIM Common Mode Rejection Ratio V DD =3.6V, Inputs ac-grounded with C=1μF VDD=5V, THD=1%, R=8Ω f=1kHz 85 % % dB 95 No A-weighting 50 100 A-weighting 30 60 Inputs ac-grounded μV V IC =100mVpp,f=1kHz 40 63 dB (To Be Cont’d) Power Analog Microelectronics , Inc 09/2008 Rev 1.4 www.poweranalog.com 5 PAM8303D Ultra Low EMI, 3W Filterless Mono Class-D Audio Power Amplifier Electrical Characteristic (continued) T A=25 ° C, V DD=5V, Gain=2V/V, R L=L(33 μ H)+R+L(33 μ H), unless otherwise noted . Symbol η Parameter Efficiency Test Conditions R L=8Ω, THD=10% R L=4Ω, THD=10% f=1kHz MIM TYP 85 90 80 86 V DD =5V IQ Quiescent Current 10 4.6 7 3.6 5 0.5 2 CSP package,High Side V DD =5V 280 350 PMOS plus Low Side V DD =3.6V 300 375 NMOS, I=500mA V DD =3V 325 400 MSOP/DFN package, V DD =5V 365 420 High Side PMOS plus V DD =3.6V 385 450 V DD =3V 410 500 V DD =3.6V R =8Ω Rdson Shutdown Current Static Drain-to-source On-state Resistor V DD =3V to 5V V SD=0.3V Low Side NMOS, I=500mA Ri Input Resistance fsw Switching Frequency V DD =3V to 5V 150 Gv Closed-loop Gain V DD =3V to 5V Vos Output Offset Voltage Input ac-ground,VDD =5V VIH Enable Input High Voltage V DD =5V VIL Enable Input Low Voltage V DD =5V 200 250 mA μA mΩ mΩ kΩ 300 300kΩ/Ri 10 UNIT % 7.5 V DD =3.0V ISD MAX kHz V/V 50 1.5 0.3 mV V Power Analog Microelectronics , Inc 09/2008 Rev 1.4 www.poweranalog.com 6 PAM8303D Ultra Low EMI, 3W Filterless Mono Class-D Audio Power Amplifier Typical Operating Characteristics T A=25 ° C, V DD=5V, f=1kHz, Gain=2V/V, unless otherwise noted . 100 90 90 80 80 70 V DD=5V 60 50 Efficiency (%) Efficiency (%) 1. Efficiency VS Output Power 100 V DD=3.6V 40 30 2. Efficiency VS Output Power 70 V DD=5V 60 50 V DD=3.6V 40 30 20 20 10 10 R L=8 Ω 0 0 0.5 1 1.5 R L=4 Ω 0 2 0 0.5 1 1.5 2 2.5 3 Output Pow er (W) Output Pow er (W) Audio Precision 3. THD+N VS Output Power 30 20 4. THD+N VS Output Power 30 20 R L=8 Ω BW=22Hz ~22kHz 10 10 5 % V DD=3.2V % 2 V DD=3.2V 1 1 0.5 0.5 0.2 0.2 V DD=5.0V 50m 100m 200m 500m V DD=3.6V 5 V DD=3.6V 2 0.1 30m R L=4 Ω BW=22Hz ~22kHz 1 2 0.1 10m 3 W V DD=5.0V 20m 50m 100m 200m 500m 1 2 4 W Power Analog Microelectronics , Inc 09/2008 Rev 1.4 www.poweranalog.com 7 PAM8303D Ultra Low EMI, 3W Filterless Mono Class-D Audio Power Amplifier Typical Operating Characteristics T A=25 ° C, V DD=5V, f=1kHz, Gain=2V/V, unless otherwise noted . 5. THD+N VS Frequency 5 R L=4 Ω,V DD=5V BW=10Hz ~30kHz R L=4 Ω,V DD=3.6V BW=10Hz ~30kHz 5 2 2 % 6. THD+N VS Frequency 10 10 Po=1W 1 % Po=1W 1 Po=400mW 0.5 0.5 0.2 0.2 0.1 20 50 100 200 500 1k 2k 5k 10k Po=150mW 0.1 20 20k 50 100 200 7. THD+N VS Frequency R L=8 Ω,V DD=5V BW=10Hz ~30kHz 5 5k 10k 20k 2k 5k 10k 20k R L=8 Ω,V DD=3.6V BW=10Hz ~30kHz 2 Po=400mW Po=100mW 1 % 1 0.5 0.5 0.2 0.2 Po=1W 0.1 20 2k 10 2 % 1k 8. THD+N VS Frequency 10 5 500 Hz Hz 50 100 200 500 1k 2k 5k Po=500mW 10k 0.1 20 20k 50 100 200 500 1k Hz Hz Power Analog Microelectronics , Inc 09/2008 Rev 1.4 www.poweranalog.com 8 PAM8303D Ultra Low EMI, 3W Filterless Mono Class-D Audio Power Amplifier Typical Operating Characteristics T A=25 ° C, V DD=5V, f=1kHz, Gain=2V/V, unless otherwise noted . 9. Frequency Response 10. PSRR VS Frequency +5 +0 Gain=0dB@1kHz Po=400mW +4 T T Inputs ac-ground V DD=3.6V, Vripp=100mVpp, -10 +3 -20 +2 d B r +1 A -1 -30 d B +0 -40 -50 -2 -60 -3 -70 -4 -5 20 50 100 200 500 1k 2k 5k 10k -80 10 20k 20 50 100 200 500 1k -30 2k 5k 10k 20k 50k 100k Hz Hz 11. CMRR vs Frequency +0 12. Noise FFT -1 0 -35 Inputs ac-ground -2 0 -40 -3 0 -45 -4 0 -5 0 d B r -50 -55 d B r A -60 A -6 0 -7 0 -8 0 -9 0 -1 0 0 -65 -1 1 0 -70 -1 2 0 -75 -1 3 0 -1 4 0 -80 20 50 100 200 500 1k 2k 5k 10k -1 5 0 20 20k Hz 50 100 200 500 1k 2k 5k 10k 20k Hz Power Analog Microelectronics , Inc 09/2008 Rev 1.4 www.poweranalog.com 9 PAM8303D Ultra Low EMI, 3W Filterless Mono Class-D Audio Power Amplifier Typical Operating Characteristics T A=25 ° C, V DD=5V, f=1kHz, Gain=2V/V, unless otherwise noted . 13. Quiescent Current vs Power Supply Voltage 12 R L=8 Ω 10 14. Shutdown Voltage vs Shutdown Current 10 Shutdown Current(uA) Power Supply Voltage (V) 12 8 No load 6 4 2 V DD=5V 8 6 4 2 0 0 3 3.5 4 4.5 5 0 5.5 0.2 0.4 0.6 0.8 Shutdow n Voltage (V) Quiescent Current (mA) 15. Output Power vs Supply Voltage 2.5 16. Output Power vs Supply Voltage 3.5 R L=4 Ω R L=8 Ω 3 Output Power (W) 2 Output Power (V) V DD=3.6V V DD=3V THD=10% 1.5 1 THD=1% THD=10% 2.5 2 1.5 THD=1% 1 0.5 0.5 0 0 3 3.5 4 4.5 5 5.5 3 Supply Voltage (V) 3.5 4 4.5 5 Supply Voltage (V) Power Analog Microelectronics , Inc 09/2008 Rev 1.4 www.poweranalog.com 10 PAM8303D Ultra Low EMI, 3W Filterless Mono Class-D Audio Power Amplifier Typical Operating Characteristics T A=25 ° C, V DD=5V, f=1kHz, Gain=2V/V, unless otherwise noted . 17. OSC Frequency 300 300 Input ac-ground Isw=500mA 100% duty cycle 280 280 260 270 240 Rdson (mΩ) Frequency (KHz) 290 18. Rdson vs Supply Voltage 260 250 240 PMOS 220 200 180 230 160 220 140 210 120 NOMS 100 200 2.7 3.4 4.1 4.8 3 5.5 3.5 Supply Voltage (V) 4 Supply Voltage (V) 4.5 5 19. Start-up from Shutdown Output SD Test Setup for Performance Testing PAM8303D Demo Board Load +OUT AP System One Generator Input AP Low Pass Filter GND -OUT AP System One Analyzer AUX-0025 VDD Power Supply Notes 1. The AP AUX-0025 low pass filter is necessary for class-D amplifier measurement with AP analyzer. 2. Two 22μH inductors are used in series with load resistor to emulate the small speaker for efficiency measurement. Power Analog Microelectronics , Inc 09/2008 Rev 1.4 www.poweranalog.com 11 PAM8303D Ultra Low EMI, 3W Filterless Mono Class-D Audio Power Amplifier Application Information Input Resistance (Ri) For this reason, a low-leakage tantalum or ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most applications as the DC level is held at V DD/2, which is likely higher than the source DC level. Please note that it is important to confirm the capacitor polarity in the application. The input resistors (Ri) set the gain of the amplifier according to Equation 1. 2 ´ 150kW æ V ö Gain = ç ÷ Ri èVø Resistor matching is very important in fully differential amplifiers. The balance of the output on the reference voltage depends on matched ratios of the resistors. CMRR, PSRR, and cancellation of the second harmonic distortion diminish if resistor mismatch occurs. Therefore, it is recommended to use 1% tolerance resistors or better to keep the performance optimized. Matching is more important than overall tolerance. Resistor arrays with 1% matching can be used with a tolerance greater than 1%. Decoupling Capacitor (C S ) The PAM8303D is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to ensure the output total harmonic distortion (THD) as low as possible. Power supply decoupling also prevents the oscillations causing by long lead length between the amplifier and the speaker. Place the input resistors very close to the PAM8303D to limit noise injection on the highimpedance nodes. The optimum decoupling is achieved by using two different types of capacitors that target on different types of noise on the power supply leads. For higher frequency transients, spikes, or digital hash on the line, a good low equivalentseries-resistance (ESR) ceramic capacitor, typically 1 μ F, is placed as close as possible to the device each VDD and PVDD pin for the best operation. For filtering lower frequency noise signals, a large ceramic capacitor of 10 μ F or greater placed near the audio power amplifier is recommended. For optimal performance the gain should be set to 2X(Ri=150k) or lower. Lower gain allows the PAM8303D to operate at its best, and keeps a high voltage at the input making the inputs less susceptible to noise. In addition to these features, higher value of Ri minimizes pop noise. Input Capacitors (Ci ) In the typical application, an input capacitor, Ci, is required to allow the amplifier to bias the input signal to the proper DC level for optimum operation. In this case, Ci and the minimum input impedance Ri form is a high-pass filter with the corner frequency determined in the follow equation: 1 fC = (2p RiCi) How to Reduce EMI Most applications require a ferrite bead filter for EMI elimination shown at Figure 1. The ferrite filter reduces EMI around 1MHz and higher. When selecting a ferrite bead, choose one with high impedance at high frequencies, but low impedance at low frequencies. Ferrite Bead It is important to consider the value of Ci as it directly affects the low frequency performance of the circuit. For example, when Ri is 150k Ω and the specification calls for a flat bass response are down to 150Hz. Equation is reconfigured as followed: 1 Ci = (2p Rifc ) When input resistance variation is considered, the Ci is 7nF, so one would likely choose a value of 10nF. A further consideration for this capacitor is the leakage path from the input source through the input network ( Ci , Ri + Rf ) to the load. This leakage current creates a DC offset voltage at the input to the amplifier that reduces useful headroom, especially in high gain applications. OUT+ 200pF Ferrite Bead OUT- 200pF Figure 1: Ferrite Bead Filter to Reduce EMI Shutdown operation In order to reduce power consumption while not in use, the PAM8303D contains shutdown circuitry that is used to turn off the amplifier’s bias circuitry. This shutdown feature turns the Power Analog Microelectronics , Inc 09/2008 Rev 1.4 www.poweranalog.com 12 PAM8303D Ultra Low EMI, 3W Filterless Mono Class-D Audio Power Amplifier amplifier off when logic low is placed on the SD pin. By switching the shutdown pin connected to GND, the PAM8303D supply current draw will be minimized in idle mode. PCB Layout Guidelines Grounding It is recommended to use plane grounding or separate grounds. Do not use one line connecting power GND and analog GND. Noise currents in the output power stage need to be returned to output noise ground and nowhere else. When these currents circulate elsewhere, they may get into the power supply, or the signal ground, etc, even worse, they may form a loop and radiate noise. Any of these instances results in degraded amplifier performance. The output noise ground that the logical returns for the output noise currents associated with class D switching must tie to system ground at the power exclusively. Signal currents for the inputs, reference need to be returned to quite ground. This ground only ties to the signal components and the GND pin. GND then ties to system ground. Under Voltage Lock-out (UVLO) The PAM8303D incorporates circuitry designed to detect low supply voltage. When the supply voltage drops to 2.3V or below, the PAM8303D goes into a state of shutdown, and the device comes out of its shutdown state and restore to normal function only when reset the power supply or SD pin. Short Circuit Protection (SCP) The PAM8303D has short circuit protection circuitry on the outputs to prevent the device from damage when output-to-output shorts or output-to-GND shorts occur. When a short circuit occurs, the device immediately goes into shutdown state. Once the short is removed, the device will be reactivated. Power Supply Line Over Temperature Protection (OTP) As same to the ground, VDD and PVDD need to be separately connected to the system power supply. It is recommended that all the trace could be routed as short and thick as possible. For the power line layout, just imagine water stream, any barricade placed in the trace (shown in figure 2) could result in the bad performance of the amplifier. Thermal protection on the PAM8303D prevents the device from damage when the internal die temperature exceeds 135°C. There is a 15 °C tolerance on this trip point from device to device. Once the die temperature exceeds the set point, the device will enter the shutdown state and the outputs are disabled. This is not a latched fault. The thermal fault is cleared once the temperature of the die decreased by 30 °C . This large hysteresis will prevent motor boating sound well and the device begins normal operation at this point with no external system interaction. Figure 2: Power Line Components Placement POP and Click Circuitry Decoupling capacitors-As previously described, the high-frequency 1 μ F decoupling capacitors should be placed as close to the power supply terminals (VDD and PVDD) as possible. Large bulk power supply decoupling capacitors (10 μ F or greater) should be placed near the PAM8303D on the PVDD terminal. The PAM8303D contains circuitry to minimize turn-on and turn-off transients or “click and pops”, where turn-on refers to either power supply turn-on or device recover from shutdown mode. When the device is turned on, the amplifiers are internally muted. An internal current source ramps up the internal reference voltage. The device will remain in mute mode until the reference voltage reach half supply voltage, 1/2 VDD. As soon as the reference voltage is stable, the device will begin full operation. For the best power-off pop performance, the amplifier should be set in shutdown mode prior to removing the power supply voltage. Input resistors and capacitors need to be placed very close to input pins. Output filter - The ferrite EMI filter should be placed as close to the output terminals as possible for the best EMI performance, and the capacitors used in the filters should be grounded to system ground. Power Analog Microelectronics , Inc 09/2008 Rev 1.4 www.poweranalog.com 13 PAM8303D Ultra Low EMI, 3W Filterless Mono Class-D Audio Power Amplifier Ordering Information PAM8303D X X X Number of pins Package Type Pin Configuration Pin Configuration A: A1: IN+ A2: GND Package Type Number of pins Z: WCSP C: 8 Y: DFN 3x3 N: 9 S: MSOP A3: OUTB1: VDD B2: PVDD B3: GND C1: INC2: SD C3: OUT+ B: 1: OUT+ 2: PVDD 3: VDD 4: IN5: IN+ 6: SD 7: GND 8: OUT- Part Number PAM8303DAZN PAM8303DBYC PAM8303DBSC Marking BC YW P8303D XXXXYW P8303D XXXXYW Package Type MOQ WCSP 9 3,000 Units/ Tape & Reel DFN 3x3 3,000 Units/ Tape & Reel MSOP-8 2,500 Units/ Tape & Reel Power Analog Microelectronics , Inc 09/2008 Rev 1.4 www.poweranalog.com 14 PAM8303D Ultra Low EMI, 3W Filterless Mono Class-D Audio Power Amplifier Outline Dimensions WCSP 1.00 1.45 ± 0.02 0.50 1.45 ± 0.02 Unit: Millimeter 0.235 ± 0.02 0.415 ± 0.04 Power Analog Microelectronics , Inc 09/2008 Rev 1.4 www.poweranalog.com 15 PAM8303D Ultra Low EMI, 3W Filterless Mono Class-D Audio Power Amplifier Outline Dimensions MSOP8 REF Millimeter Min Max A -- 1.10 A1 0.05 0.15 A2 0.78 0.94 b 0.22 0.38 c 0.08 0.23 D 2.90 3.10 E 2.90 3.10 E1 4.75 5.05 e L 0.65BSC 0.40 0.70 Power Analog Microelectronics , Inc 09/2008 Rev 1.4 www.poweranalog.com 16 PAM8303D Ultra Low EMI, 3W Filterless Mono Class-D Audio Power Amplifier Outline Dimensions DFN 3x3 DFN Unit: Millimeter Power Analog Microelectronics , Inc 09/2008 Rev 1.4 www.poweranalog.com 17