Ordering number : ENA0975B Monolithic Linear IC LA0151CS For Ultra-small illumination Sensor Photo IC Overview The LA0151CS is a photo IC for ultra-small illumination sensor. It enables to be mounted on a very small limited space such as on the mobile phones which is becoming small and thinner and on other mobile applications. Functions • Linear current output • Low gain mode function [low gain : -35dB] Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Ratings Unit Maximum supply voltage VCC 6 V Operating temperature Topr -30 to +85 °C Storage temperature Tstg -40 to +100 °C Recommended operating conditions and operating voltage range at Ta = 25°C Ratings Parameter Recommended supply voltage Symbol Conditions VCC min typ 2.2 SW pin low voltage Vl Normal gain mode SW pin high voltage Vh Low gain mode 0 max 3.3 5.5 0.4 2.1 Unit V V V Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. 51408 MS 20080507-S00003 / 13008 MS 20080117-S00001 / N2107 MS PC 20071022-S00007 No.A0975-1/6 LA0151CS Electrical and optical characteristics at Ta = 25°C, VCC = 3.3V Parameter Symbol Ratings Conditions min Unit typ max Current dissipation (1) *1, *3 ICC Ev = 1000 lx, RL = 5kΩ, N mode 90 150 210 µA Current dissipation (2) *1, *3 ICC Ev = 1000 lx, RL = 5kΩ, L mode 42 70 98 µA Output current (1) *1, *3 IO1 Ev = 100 lx, N mode 6 8 10 µA Output current (2) *1, *3 IO2 Ev = 1000 lx, N mode 60 80 100 µA Output current (3) *1, *3 IO3 Ev = 100 lx, L mode 0.12 0.16 0.2 µA Output current (4) *1, *3 IO4 Ev = 1000 lx, L mode 1.2 1.6 2.0 µA Dark current Ileak Ev = 0 lx, N mode, L mode µA 0.1 Temperature coefficient *2 Itc Ev = 100 lx, N mode, L mode, 0.34 %/°C Rise time (1) *4 Tr1 Ev = 1000 lx, RL = 5kΩ, N mode 15 40 µs Rise time (2) *4 Tr2 Ev = 1000 lx, RL = 500kΩ, L mode 20 50 µs Fall time (1) *4 Tf1 Ev = 1000 lx, RL = 5kΩ, N mode 150 500 µs Fall time (2) *4 Tf2 Ev = 1000 lx, RL = 500kΩ, L mode 150 500 Peak sensitivity wave length *2 λp Saturation output voltage *5 VO Ta = -20 to 60°C Ev = 1000 lx, RL = 150kΩ, N mode 3.0 µs 550 nm 3.2 V N mode and L mode stand for the normal gain mode and the low gain mode, respectively. *1. Measured with the standard light source A. White LED is used instead in the mass production line. *2. Design guaranteed item *3. Test circuit for measuring current dissipation and output current Light source A VCC Ipd OUT LA0151CS A *4. Measuring method of rise time (Tr) and fall time (Tf) Ipd Pulse drive White LED VCC 0A Ipd 90% OUT LA0151CS VOUT 10% GND Tr Tf *5. Reference value : min = 2.6V and typ = 2.8V when VCC = 2.9V No.A0975-2/6 LA0151CS Package Dimensions unit : mm (typ) 3350A TOP VIEW SIDE VIEW BOTTOM VIEW 1.01 3 4 2 1 0.18 1 3 0.5 1.01 4 2 0.5 (0.5) 0.1 0.67 MAX SIDE VIEW SANYO : ODCSP4(1.01X1.01) Pad layout <Bottom View> <Top View> Pin No. 1 2 4 4 3 1 3 2 1 Pin Name Function VCC Power supply 2 SW Switch 3 GND Ground 4 OUT Output Ball pitch : 0.5mm, Ball size : 0.18mm Pad layout (Photos) Top View 1 4,Out 4 4 1 Pin 1 mark It is located at the center of the bottom of the pakage. 3,Gnd 1,VCC 2 Bottom View 2,SW 3 3 2 Photo diode. Only this part looks dark on the product. * The photo diode is located in pin 3. Be careful not to mistake the pin 1 mark for the photo diode. No.A0975-3/6 LA0151CS Internal block diagram VCC 1 PD OUT Current amplifier 4 2 SW 3 GND Chip pattern and photo-receiving pattern diagrams LA0151CS chip pattern diagram (top view) 1010µm 105µm 105µm 1010µm * Pin 1 is on the upper left. LA0151CS photo-receiving pattern enlarged diagram (effective area) 162µm 15µm 17µm 69µm 80.5µm 223µm 249.5µm 10µm 80.5µm 249.5µm No.A0975-4/6 LA0151CS IO -- Illuminance 1000 7 5 Current drain, ICC -- µA 10 7 5 3 2 ain Lg 1 7 5 3 2 0.1 7 5 3 2 0.01 3 ga in n ai Ng 7 5 3 2 2 N 100 Output current, IO -- µA ICC -- Illuminance 1000 7 5 3 2 n L gai 100 7 5 3 2 7 5 3 2 0.001 10 2 3 1 5 7 10 2 3 5 7100 2 3 5 7 1k 2 3 5 7 10k 2 3 1 5 7 10 2 3 Illuminance -- lx RIO -- VCC 1.4 @1000lx Relative current drain ratio, RICC -- ratio 1.2 L gain N gain 1 0.8 0.6 0.4 0.2 0 2 3 4 5 5 7 10k L gain 1.2 N gain 1 0.8 0.6 0.4 0.2 3 4 6 5 Supply voltage, VCC -- V ID -- Ta 1.E+00 7 5 3 2 1.2 1.E-01 Dark current, ID -- µA 1 in 1.E-02 n L gai in N ga 0.8 7 5 3 2 N 7 5 3 2 ga 1.E-03 0.6 7 5 3 2 1.E-04 0.4 7 5 3 2 1.E-05 7 5 3 2 0.2 --40 --20 0 20 40 60 80 100 120 1.E-06 --60 Ambient temperature, Ta -- °C 0 20 40 60 80 100 120 RS -- λ 1 VCC = 3.3V RL = 15kΩ 0.9 N Relative sensitivity, RS -- ratio n ai 1 7 5 3 2 --20 Ambient temperature, Ta -- °C VO -- Illuminance 10 7 5 3 2 --40 g 0.1 7 5 3 2 0.001 7 5 3 2 0.001 0.8 0.7 0.6 0.5 0.4 LA0151 ES2 CSP Relative output current ratio, RIO -- ratio 2 3 RICC -- VCC 0 2 6 RIO -- Ta 0 --60 Output voltage, VO -- V 5 7 1k @1000lx Supply voltage, VCC -- -- V 1.4 2 3 Human eye Relative output current ratio, RIO -- ratio 1.4 5 7 100 Illuminance -- lx 0.3 0.2 0.1 1 2 3 5 7 10 2 3 5 7100 2 3 5 7 1k Illuminance -- lx 2 3 5 710k 2 3 5 7100k 0 200 400 600 800 1000 Wavelength, λ -- nm No.A0975-5/6 LA0151CS PLE -- deg N gain 1.2 @1000lx Photopic luminous efficiency, PLE -- ratio Photopic luminous efficiency, PLE -- ratio 1.2 1 0.8 0.6 0.4 0.2 0 --90 --60 --30 0 Angle, deg -- ° 30 60 90 PLE -- deg L gain @1000lx 1 0.8 0.6 0.4 0.2 0 --90 --60 --30 0 30 60 90 Angle, deg -- ° SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2008. Specifications and information herein are subject to change without notice. PS No.A0975-6/6