2ST5949 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Fast-switching speed ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC 1 Applications ■ 2 Audio power amplifier TO-3 Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging 2ST5949 2ST5949 TO-3 tray July 2008 Rev 3 1/8 www.st.com 8 2ST5949 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum rating Symbol Value Unit VCBO Collector-base voltage (IE = 0) 250 V VCEO Collector-emitter voltage (IB = 0) 250 V VEBO Emitter-base voltage (IC = 0) 6 V Collector current 17 A Collector peak current (tP < 5ms) 34 A PTOT Total dissipation at Tc = 25°C 250 W Tstg Storage temperature -65 to 200 °C 200 °C Value Unit 0.7 °C/W IC ICM TJ Table 3. Symbol Rthj-case 2/8 Parameter Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case ______________ __max 2ST5949 2 Electrical characteristics Electrical characteristics (Tcase = 25°C; unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 250 V 5 µA IEBO Emitter cut-off current (IC = 0) VEB = 6 V 5 µA Collector-emitter breakdown V(BR)CEO(1) voltage (I = 0) B V(BR)CBO Collector-base breakdown voltage (IE = 0) IC = 50 mA IC = 100 µA Emitter-base breakdown voltage IE = 1 mA V(BR)EBO(1) (I = 0) C VCE(sat) (1) VBE (1) hFE fT 250 V 250 V 6 V Collector-emitter saturation voltage IC = 8 A IB = 800 mA Base-emitter on voltage IC = 7 A VCE = 5 V IC = 1 A V CE = 5 V 80 IC = 7 A V CE = 5 V 35 IC = 1 A V CE = 5 V DC current gain Transition frequency 3 V 1.5 V 160 25 MHz 1. Pulsed duration = 300 µs, duty cycle ≤1.5% 3/8 2ST5949 Electrical characteristics 2.1 4/8 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve Figure 4. Output characteristics Figure 5. DC current gain Figure 6. Collector-emitter saturation voltage Figure 7. Base-emitter on voltage 2ST5949 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 5/8 2ST5949 Package mechanical data TO-3 mechanical data mm. DIM. min. typ max. A 11.00 13.10 B 0.97 1.15 C 1.50 1.65 D 8.32 8.92 E 19.00 20.00 G 10.70 11.10 N 16.50 17.20 P 25.00 26.00 R 4.00 4.09 U 38.50 39.30 V 30.00 30.30 0015923C 6/8 2ST5949 4 Revision history Revision history Table 5. Document revision history Date Revision Changes 05-Dec-2007 1 Initial release. 05-May-2008 2 New graphics. Updated figure 7 and maximum operating junction temperature value. 11-Jul-2008 3 Updated figure 7 and maximum operating junction temperature value. 7/8 2ST5949 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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