2SD882 NPN medium power transistor Features ■ High current ■ Low saturation voltage ■ Complement to 2SB772 Applications ■ Voltage regulation ■ Relay driver ■ Generic switch ■ Audio power amplifier ■ DC-DC converter 3 2 1 SOT-32 (TO-126) Figure 1. Description Internal schematic diagram The device is a NPN transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772. Table 1. Device summary Order code Marking Package Packing 2SD882 D882 SOT-32 Tube October 2007 Rev 3 1/8 www.st.com 8 Absolute maximum ratings 1 2SD882 Absolute maximum ratings Table 2. Absolute maximum rating Symbol Parameter Unit VCBO Collector-base voltage (IE = 0) 60 V VCEO Collector-emitter voltage (IB = 0) 30 V VEBO Collector-base voltage (IC = 0) 5 V Collector current 3 A Collector peak current (tP < 5ms) 6 A Base current 1 A IBM Base peak current (tP < 5ms) 2 A PTOT Total dissipation at Tc = 25°C 12.5 W TSTG Storage temperature -65 to 150 °C 150 °C Value Unit 10 °C/W IC ICM IB TJ Table 3. Symbol Max. operating junction temperature Thermal data Parameter RthJ-case Thermal resistance junction-case max 2/8 Value 2SD882 2 Electrical characteristics Electrical characteristics (TCASE = 25°C; unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE = 60 V 10 µA ICEO Collector cut-off current (IB = 0) VCE = 30 V 100 µA IEBO Emitter cut-off current (IC = 0) VEB = 5 V 10 µA V(BR)CEO (1) Collector-emitter breakdown voltage IC = 10 mA (IB = 0 ) 30 V Collector-base breakdown V(BR)CBO voltage (IE = 0 ) IC = 100 µA 60 V Emitter-base breakdown V(BR)EBO voltage (IC = 0 ) IE = 100 µA 5 V VCE(sat) (1) VBE(sat) (1) hFE fT Collector-emitter saturation voltage IC = 1 A IC = 2 A IC = 3 A IB = 50 mA IB = 100 mA IB = 150 mA 0.4 0.7 1.1 V V V Base-emitter saturation voltage IC = 2 A IB = 100 mA 1.2 V DC current gain IC = 100 mA IC = 1 A IC = 3 A Transition frequency IC = 0.1 A VCE = 2 V VCE = 2 V VCE = 2 V VCE = 10 V 100 80 30 300 100 MHz 1. Pulsed duration = 300 ms, duty cycle ≤1.5%. 3/8 Electrical characteristics 2SD882 2.1 Typical characteristics (curves) Figure 2. Reverse biased safe operating area Figure 3. DC current gain Figure 4. Collector-emitter saturation voltage Figure 5. Base-emitter saturation voltage 4/8 2SD882 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 5/8 Package mechanical data 2SD882 SOT-32 (TO-126) mechanical data DIM. mm. MIN. TYP MAX. A 2.4 2.9 B 0.64 0.88 B1 0.39 0.63 D 10.5 11.05 E 7.4 7.8 e 2.04 2.29 2.54 e1 4.07 4.58 5.08 L 15.3 P 2.9 Q .8 3 Q1 3.2 1 H2 I 16 1.52 2.15 7 .2 1 0016114E 6/8 2SD882 4 Revision history Revision history Table 5. Document revision history Date Revision Changes 09-Sep-2005 2 Final datasheet. New template 02-Oct-2007 3 Updated mechanical data 7/8 2SD882 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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