STMICROELECTRONICS 2SD882

2SD882
NPN medium power transistor
Features
■
High current
■
Low saturation voltage
■
Complement to 2SB772
Applications
■
Voltage regulation
■
Relay driver
■
Generic switch
■
Audio power amplifier
■
DC-DC converter
3
2
1
SOT-32
(TO-126)
Figure 1.
Description
Internal schematic diagram
The device is a NPN transistor manufactured by
using planar technology resulting in rugged high
performance devices. The complementary PNP
type is 2SB772.
Table 1.
Device summary
Order code
Marking
Package
Packing
2SD882
D882
SOT-32
Tube
October 2007
Rev 3
1/8
www.st.com
8
Absolute maximum ratings
1
2SD882
Absolute maximum ratings
Table 2.
Absolute maximum rating
Symbol
Parameter
Unit
VCBO
Collector-base voltage (IE = 0)
60
V
VCEO
Collector-emitter voltage (IB = 0)
30
V
VEBO
Collector-base voltage (IC = 0)
5
V
Collector current
3
A
Collector peak current (tP < 5ms)
6
A
Base current
1
A
IBM
Base peak current (tP < 5ms)
2
A
PTOT
Total dissipation at Tc = 25°C
12.5
W
TSTG
Storage temperature
-65 to 150
°C
150
°C
Value
Unit
10
°C/W
IC
ICM
IB
TJ
Table 3.
Symbol
Max. operating junction temperature
Thermal data
Parameter
RthJ-case Thermal resistance junction-case max
2/8
Value
2SD882
2
Electrical characteristics
Electrical characteristics
(TCASE = 25°C; unless otherwise specified)
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE = 0)
VCE = 60 V
10
µA
ICEO
Collector cut-off current
(IB = 0)
VCE = 30 V
100
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
10
µA
V(BR)CEO
(1)
Collector-emitter breakdown
voltage
IC = 10 mA
(IB = 0 )
30
V
Collector-base breakdown
V(BR)CBO voltage
(IE = 0 )
IC = 100 µA
60
V
Emitter-base breakdown
V(BR)EBO voltage
(IC = 0 )
IE = 100 µA
5
V
VCE(sat)
(1)
VBE(sat)
(1)
hFE
fT
Collector-emitter saturation
voltage
IC = 1 A
IC = 2 A
IC = 3 A
IB = 50 mA
IB = 100 mA
IB = 150 mA
0.4
0.7
1.1
V
V
V
Base-emitter saturation
voltage
IC = 2 A
IB = 100 mA
1.2
V
DC current gain
IC = 100 mA
IC = 1 A
IC = 3 A
Transition frequency
IC = 0.1 A
VCE = 2 V
VCE = 2 V
VCE = 2 V
VCE = 10 V
100
80
30
300
100
MHz
1. Pulsed duration = 300 ms, duty cycle ≤1.5%.
3/8
Electrical characteristics
2SD882
2.1
Typical characteristics (curves)
Figure 2.
Reverse biased safe operating area Figure 3.
DC current gain
Figure 4.
Collector-emitter saturation voltage Figure 5.
Base-emitter saturation voltage
4/8
2SD882
3
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
5/8
Package mechanical data
2SD882
SOT-32 (TO-126) mechanical data
DIM.
mm.
MIN.
TYP
MAX.
A
2.4
2.9
B
0.64
0.88
B1
0.39
0.63
D
10.5
11.05
E
7.4
7.8
e
2.04
2.29
2.54
e1
4.07
4.58
5.08
L
15.3
P
2.9
Q
.8
3
Q1
3.2
1
H2
I
16
1.52
2.15
7
.2
1
0016114E
6/8
2SD882
4
Revision history
Revision history
Table 5.
Document revision history
Date
Revision
Changes
09-Sep-2005
2
Final datasheet. New template
02-Oct-2007
3
Updated mechanical data
7/8
2SD882
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