TSC BZX85C82

Preliminary
BZX85C SERIES
Zener Diode
Voltage Range
2.4 to 212 Volts
1.3Watts Power Dissipation
DO-41
Features
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—
—
Silicon Planar Power Zener Diodes
For use in stabilizing and clipping circuits with
high power rating
The Zener voltages are graded according to
the international E24 standard. Replace suffix
“C”
Mechanical Data
—
—
—
—
—
Case: Molded plastic DO-41
Lead: Axial leads, solderable per
MIIL-STD-202, Method 2025
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 310 mg (approx.)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
Symbol
Pd
RθJA
Value
1.3
130
Units
W
O
C /W
TJ, TSTG
-55 to + 175
O
C
Notes: 1. Measured with pulses tp=5ms
2. Valid Provided that Lead are Kept at Ambient Temperature at a distance of
10 mm from case..
3. f = 1KHz.
02.17.2005/rev. a
ELECTRICAL CHARACTERISTICS (TA=25OC
Zener Voltage
Range (Note 1)
unless otherwise noted)
Dynamic Resistance
Temperature
Coefficient of
Zener Voltage
Device
Vz @ Izt
V
Min
Max
fZT
(Note 3)
Ohm
IZT
IZK
mA
fZT
(Note 3)
Ohms
mA
VZ
IR
uA
VR
V
Admissible
Zener
Current
(Note 2)
IZ
mA
Reverse Leakage
Current
@ IZ= IZT
% /OC
Min
Max
BZX85C2V7
2.5
2.9
<20
80
<400
1
-0.08
-0.05
<150
1.0
360
BZX85C3V0
2.8
3.2
<20
80
<400
1
-0.08
-0.05
<100
1.0
330
BZX85C3V3
3.1
3.5
<20
80
<400
1
-0.08
-0.05
<40
1.0
300
BZX85C3V6
3.4
3.8
<20
60
<500
1
-0.08
-0.05
<20
1.0
290
BZX85C3V9
3.7
4.1
<15
60
<500
1
-0.07
-0.02
<10
1.0
280
BZX85C4V3
4
4.6
<13
50
<500
1
-0.05
0.01
<3
1.0
250
BZX85C4V7
4.4
5.0
<13
45
<600
1
-0.03
0.04
<3
1.0
215.0
BZX85C5V1
4.8
5.4
<10
45
<500
1
-0.01
0.04
<1
1.5
200.0
BZX85C5V6
5.2
6
<7
45
<400
1
0
0.045
<1
2.0
190.0
BZX85C6V2
5.8
6.6
<4
35
<300
1
0.01
0.055
<1
3.0
170.0
BZX85C6V8
6.4
7.2
<3.5
35
<300
1
0.015
0.06
<1
4.0
155.0
BZX85C7V5
7
7.9
<3
35
<200
0.5
0.02
0.065
<1
4.5
140.0
BZX85C8V2
7.7
8.7
<5
25
<200
0.5
0.03
0.07
<1
6.2
130.0
BZX85C9V1
8.5
9.6
<5
25
<200
0.5
0.035
0.075
<1
6.8
120.0
BZX85C10
9.4
10.6
<7
25
<200
0.5
0.04
0.08
<0.5
7.5
105.0
BZX85C11
10.4
11.6
<8
20
<300
0.5
0.045
0.08
<0.5
8.2
97.0
BZX85C12
11.4
12.7
<9
20
<350
0.5
0.045
0.085
<0.5
9.1
88.0
BZX85C13
12.4
14.1
<10
20
<400
0.5
0.05
0.085
<0.5
10
79.0
BZX85C15
13.8
15.6
<15
15
<500
0.5
0.055
0.09
<0.5
11
71.0
BZX85C16
15.3
17.1
<15
15
<500
0.5
0.055
0.09
<0.5
12
66.0
BZX85C18
16.8
19.1
<20
15
<500
0.5
0.06
0.09
<0.5
13
62.0
BZX85C20
18.8
21.2
<24
10
<600
0.5
0.06
0.09
<0.5
15
56.0
BZX85C22
20.8
23.3
<25
10
<600
0.5
0.06
0.095
<0.5
16
52.0
BZX85C24
22.8
25.6
<25
10
<600
0.5
0.06
0.095
<0.5
18
47.0
BZX85C27
25.1
28.9
<30
8
<750
0.25
0.06
0.095
<0.5
20
41.0
BZX85C30
28
32
<30
8
<1000
0.25
0.06
0.095
<0.5
22
36.0
BZX85C33
31
35
<35
8
<1000
0.25
0.06
0.095
<0.5
24
33.0
BZX85C36
34
38
<40
8
<1000
0.25
0.06
0.095
<0.5
27
30.0
BZX85C39
37
41
<50
6
<1000
0.25
0.06
0.095
<0.5
30
28.0
BZX85C43
40
46
<50
6
<1000
0.25
0.06
0.095
<0.5
33
26.0
BZX85C47
44
50
<90
4
<1500
0.25
0.06
0.095
<0.5
36
23.0
BZX85C51
48
54
<115
4
<1500
0.25
0.06
0.095
<0.5
39
21.0
BZX85C56
52
60
<120
4
<2000
0.25
0.06
0.095
<0.5
43
19.0
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300us pulse width, period = 5ms.
3. f = 1KHz.
ELECTRICAL CHARACTERISTICS (TA=25OC
Zener Voltage
Range (Note 1)
unless otherwise noted)
Temperature
Coefficient of
Zener Voltage
Dynamic Resistance
Device
Vz @ Izt
V
Min
Max
fZT
(Note 3)
Ohm
IZT
IZK
@ IZ= IZT
Admissible
Reverse Leakage Zener
Current
Current
(Note 2)
IZ
IR
VR
uA
V
mA
mA
fZT
(Note 3)
Ohms
mA
% /OC
Min
Max
BZX85C62
58
66
<125
4.0
<2000
0.25
0.06
0.095
<0.5
47
16
BZX85C68
64
72
<130
4.0
<2000
0.25
0.055
0.095
<0.5
51
15
BZX85C75
70
80
<135
4.0
<2000
0.25
0.055
0.095
<0.5
56
14
BZX85C82
77
87
<200
2.7
<3000
0.25
0.055
0.095
<0.5
62
12
BZX85C91
85
96
<250
2.7
<3000
0.25
0.055
0.095
<0.5
68
10
BZX85C100
96
106
<350
2.7
<3000
0.25
0.055
0.095
<0.5
75
9.4
BZX85C110
104
116
<450
2.7
<4000
0.25
0.055
0.095
<0.5
82
8.6
BZX85C120
114
127
<550
2.0
<4500
0.25
0.055
0.095
<0.5
91
7.8
BZX85C130
124
141
<700
2.0
<5000
0.25
0.055
0.095
<0.5
100
7.0
BZX85C150
138
156
<1000
2.0
<6000
0.25
0.055
0.095
<0.5
110
6.4
BZX85C160
153
171
<1100
1.5
<6500
0.25
0.055
0.095
<0.5
120
5.8
BZX85C180
168
191
<1200
1.5
<7000
0.25
0.055
0.095
<0.5
130
5.2
BZX85C200
188
212
<1500
1.5
<8000
0.25
0.055
0.095
<0.5
150
4.7
VZ
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300us pulse width, period = 5ms.
3. f = 1KHz.
RATINGS AND CHARACTERISTIC CURVES (BZX85C SERIES)
FIG.1- PULSE THERMAL RESISTANCE VS
PULSE DURATION
FIG.3- DYNAMIC RESISTANCE VS ZENER CURRENT
FIG.5- ADMISSIBLE POWER DISSIPATION VS
AMBIENT TEMPERATURE
FIG.2- DYNAMIC RESISTANCE VS ZENER CURRENT
FIG.4- THERMAL RESISTANCE VS LEAD LENGTH
FIG.6- DYNAMIC RESISTANCE VS ZENER CURRENT
RATINGS AND CHARACTERISTIC CURVES (BZX85C SERIES)
FIG.7- BREAKDOWN CHARACTERISTICS
FIG.8- BREAKDOWN CHARACTERISTICS