AME, Inc. 750mA CMOS LDO AME8844 n General Description The AME8844 family of positive, linear regulators feature low quiescent current (45µA typ.) with low dropout voltage, making them ideal for battery applications. n Functional Block Diagram (Fixed Versions) OUT IN Output voltages are set at the factory and trimmed to 1.5% accuracy. Overcurrent Shutdown These rugged devices have both Thermal Shutdown, and Current Fold-back to prevent device failure under the "Worst" operating conditions. Thermal Shutdown EN An additional feature is a “Power Good” detector, which pulls low when the output is out of regulation. R1 Vref x115% AMP PG The AME8844 is stable with an output capacitance of 4.7µF or greater. R2 n Features Vref x85% Vref l Very Low Dropout Voltage l Guaranteed 750mA Output l Accurate to within 1.5% l 45µA Quiescent Current Typically GND (Adjustable Version) IN OUT l Over-Temperature Shutdown l Current Limiting Overcurrent Shutdown l Short Circuit Current Fold-back Thermal Shutdown l Noise Reduction Bypass Capacitor (Fixed Versions) R1 AMP l Power-Saving Shutdown Mode EN (external) l Space-Saving MSOP-8 Package ADJ l 6 Factory Pre-set Output Voltages 1.242V l Low Temperature Coefficient R2 (external) l Adjustable Version l Power Good Output Function. l All AME's Lead Free Products Meet RoHS Standards GND n Typical Applications IN IN n Applications l Instrumentation l Portable Electronics OUT OUT AME8844 PG GND EN C1 C3 1µF 4.7µF 5V l Wireless Devices l PC Peripherals l Battery Powered Widgets Rev.E.01 1 AME, Inc. 750mA CMOS LDO AME8844 n Pin Configuration MSOP-8 Top View 8 7 6 MSOP-8 Top View AME 8844AEQAxxx 5 1 2 3 6 5 AME 8844BEQAADJ 1. EN 2. IN 2. IN 3. PG 3. ADJ AME8844 4. OUT 5. GND 5. GND 6. GND 6. GND 7. GND 7. GND 8. GND 4 7 1. EN 4. OUT AME8844 8 1 2 3 4 * Die Attach: 8. GND * Die Attach: Conductive Epoxy Conductive Epoxy n Pin Description Pin Number Pin Name Pin Description AME8844AEQA AME8844BEQA 1 1 EN Enable pin. When pulled low, the PMOS pass transistor turns off, current consuming less than 1µA. 2 2 IN Input voltage pin. It should be decoupled with 1µF or greater capacitor. N/A 3 ADJ Feedback output voltage for adjustable device. 3 N/A PG Power-Good output. This open-drain output is low when output is out of regulation. OUT LDO voltage regulator output pin. It should be decoupled with a 4.7µF or greater value low ESR ceramic capacitor. GND Ground connection pin. 4 4 5, 6, 7, 8 2 Rev.E.01 AME, Inc. 750mA CMOS LDO AME8844 n Ordering Information AME8844 x x x x xxx x Special Feature Output Voltage Number of Pins Package Type Operating Ambient Temperature Range Pin Configuration Pin Configuration A: 1. EN 2. IN 3. PG 4. OUT 5. GND 6. GND 7. GND 8. GND (MSOP-8) Operating Ambient Temperature Range Package Type E: -40OC to 85OC Q: MSOP Number Output Voltage of Pins A: 8 ADJ: 150: 180: 250: 330: Adjustable V=1.5V V=1.8V V=2.5V V=3.3V Special Feature Z: Lead Free B: 1. EN 2. IN 3. ADJ 4. OUT 5. GND 6. GND 7. GND 8. GND (MSOP-8) Rev.E.01 3 AME, Inc. 750mA CMOS LDO AME8844 n Ordering Information Part Number Marking* Output Voltage Package Operating Ambient Temperature Range AME8844AEQA150Z 8844 Lyww 1.50 MSOP-8 - 40oC to 85oC AME8844AEQA180 8844 Myww 1.80 MSOP-8 - 40oC to 85oC AME8844AEQA180Z 8844 Myww 1.80 MSOP-8 - 40oC to 85oC AME8844AEQA250Z 8844 Dyww 2.50 MSOP-8 - 40oC to 85oC AME8844AEQA330Z 8844 Ayww 3.30 MSOP-8 - 40oC to 85oC AME8844BEQAADJ 8844 Byww ADJ MSOP-8 - 40oC to 85oC AME8844BEQAADJZ 8844 Byww ADJ MSOP-8 - 40oC to 85oC Note: yww represents the date code * A line on top of the first character represents lead free plating such as 8844 Please consult AME sales office or authorized Rep./Distributor for the availability of output voltage and package type. 4 Rev.E.01 AME, Inc. 750mA CMOS LDO AME8844 n Absolute Maximum Ratings Parameter Maximum Unit Input Voltage -0.3 to 8 V EN Voltage -0.3 to 8 V Output Voltage -0.3 to VIN + 0.3 V PG Voltage -0.3 to VIN + 0.3 V Output Current PD / (V IN - VOUT) mA B* ESD Classification Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device. * HBM B: 2000~3999V n Recommended Operating Conditions Parameter Symbol Rating Unit Ambient Temperature Range TA - 40 to 85 o Junction Temperature Range TJ - 40 to 125 o Storage Temperature Range TSTG - 65 to 150 o C C C n Thermal Information Parameter Package Die Attach Thermal Resistance * (Junction to Case) Symbol Maximum θJC 100 Unit o C/W Thermal Resistance (Junction to Ambient) MSOP-8 Conductive Epoxy Internal Power Dissipation θJA 206 PD 625 mW Maximum Junction Temperature 150 o C Solder Iron(10 Sec)** 350 o C * Measure θJC on center of molding compound if IC has no tab. ** MIL-STD-202G 210F Rev.E.01 5 AME, Inc. 750mA CMOS LDO AME8844 n Electrical Specifications VIN = VO(NOM) +2V, VEN = VIN, TA = 25OC unless otherwise noted Parameter Symbol Input Voltage Output Voltage Accuracy VIN VO Dropout Voltage Output Current Current Limit Short Circuit Current Quiescent Current Ground Pin Current VDROPOUT IO ILIM ISC IQ IGND Line Regulation REGLINE Load Regulation Over Temerature Shutdown Over Temerature Hysterisis V O Temperature Coefficient ADJ Input Bias Current Minimum Load Current ADJ Reference Voltage REGLOAD OTS OTH TC Power Supply Rejection Output Voltage Noise EN Input Threshold EN Input Bias Current Shutdown Supply Current Output Under Voltage Output Over Voltage PG Leakage Current PG Voltage Low Test Condition Min IO=1mA Note 1 -1.5 VO(NOM) =1.5V VO(NOM) =1.8V VO=VONOM -2.0% VO(NOM) >=2.0V VO>1.2V VO>1.2V VIN =VO(NOM) +1V, VO < 0.4V IO=0mA IO=1mA to 750mA V O < 2.0V IO=1mA 4.0 > VO >= 2.0V V IN =VO+1 to VO+2 4.0V <= VO IO=1mA to 750mA IO=750mA IADJ Iload V REF PSRR eN VEH V EL IEH IEL ISD VUV VOV Vin = 2.5V IO=100mA CO=4.7µF ceramic f=10Hz to 100kHz IO=10mA f=1kHz f=10kHz f=100kHz Max 7 1.5 1000 See 650 chart 500 750 750 750 45 45 -0.15 -0.1 -0.4 -1 0.02 0.2 150 30 30 1 70 0.15 0.1 0.4 1 0.5 105 V % mV mA mA mA µA µA % % % % C C ppm/oC µA µA V o dB µVrms 30 2.0 0 Units o 70 1.221 1.240 1.26 75 55 30 Co=4.7µF V IN =2.7V to 7V V IN =2.7V to 7V VEN =VIN, V IN =2.7V to 7V VEN =0V, VIN =2.7V to 7V VIN =5V, VO=0V, VEN <VEL PG goes Low when VOUT too Low PG goes Low when VOUT too High Typ Vin V 0.4 V 1 µA 1 µA 2 µA 84 %V O(NOM) %V O(NOM) ILC VPG=7V 1 µA V OL ISINK=0.25mA 0.4 V Note1:VIN(min)=VOUT+VDROPOUT 6 Rev.E.01 AME, Inc. 750mA CMOS LDO AME8844 n Detailed Description n Enable The AME8844 family of CMOS regulators contain a PMOS pass transistor, voltage reference, error amplifier, over-current protection, and thermal shutdown. When EN pin is pulled low, the PMOS pass transistor shuts off, and all internal circuits are powered down. In this state, the quiescent current is less than 2µA. This pin behaves much like an electronic switch. The P-channel pass transistor receives data from the error amplifier, over-current shutdown, and thermal protection circuits. During normal operation, the error amplifier compares the output voltage to a precision reference. Over-current and Thermal shutdown circuits become active when the junction temperature exceeds 140oC, or the current exceeds 2.2A. During thermal shutdown, the output voltage remains low. Normal operation is restored when the junction temperature drops below 120oC. The AME8844 behaves like a current source when the load reaches 2.2A. However, if the load impedance drops below 0.3 ohms, the current drops back to 600mA to prevent excessive power dissipation. Normal operation is restored when the load resistance exceeds 0.75 ohms. n External Capacitors The AME8844 is stable with an output capacitor to ground of 4.7µF or greater. Ceramic capacitors have the lowest ESR, and will offer the best AC performance. Conversely, Aluminum Electrolytic capacitors exhibit the highest ESR, resulting in the poorest AC response. Unfortunately, large value ceramic capacitors are comparatively expensive. One option is to parallel a 0.1µF ceramic capacitor with a 10µF Aluminum Electrolytic. The benefit is low ESR, high capacitance, and low overall cost. A second capacitor is recommended between the input and ground to stabilize Vin. The input capacitor should be at least 0.1µF to have a beneficial effect. All capacitors should be placed in close proximity to the pins. A "Quiet" ground termination is desirable. This can be achieved with a "Star" connection. 100K ohms resistor is necessary between VEN source and EN pin when V EN is higher than VIN. (Note: There is no internal pull-up for EN pin. It can not be floating) n Adjustable Version The adjustable version uses external feedback resistors to generate an output voltage anywhere from 1.5V to 5.0V. Vadj is trimmed to 1.24V and VOUT is given by the equation: VOUT = Vadj ( 1 + R1 / R2 ) Feedback resistors R1 and R2 should be high enough to keep quiescent current low, but increasing R1 + R2 will reduce stability. In general, R1 and R2 in the 10 sof kΩ will produce adequate stability, given reasonable layout precautions. To improve stability characteristics, keep parasitics on the ADJ pin to a minimum, and lower R1 and R2 values. n Power Good The AME8844 includes the Power Good feature. When the output is not within ? 5% of the specified voltage, it pulls low. This can occur under the following conditions: 1) Input Voltage too low. 2) During Over-Temperature. 3) During Over-Current. 4) If output is pulled up. (Note: PG pin is an open-drain output.) Rev.E.01 7 AME, Inc. 750mA CMOS LDO AME8844 Dropout Voltage VS ILOAD Dropout Voltage VS VOUT 1 1.2 0.8 Dropout Voltage (V) Dropout Voltage (V) ILOAD=1.5A VOUT=1.5 1 1.8 0.8 2.0 0.6 2.1 0.4 2.8 0.2 3.3 0.6 ILOAD=1.0A 0.4 ILOAD=0.5A 0.2 0 0 0 0.3 0.6 0.9 1.2 1.5 0 1.8 2 4 ILOAD (A) Quiescent Current vs. Temperature 8 Ground Current vs. VIN 50 41 39 45 37 40 Ground Current (µA) Quiescent Current @ 5V (uA) 6 VOUT (V) 35 33 31 29 35 IOUT = 140mA VOUT = 1.5V 30 25 20 15 27 10 25 -45 -5 25 55 85 115 2 3 4 5 Temperature (oC) 6 7 8 VIN (V) Ground Current vs. Load Current VOUT vs. Temperature(2.5V) 38.5 2.500 2.495 37.5 Output Voltage (V) Ground Current (µA) 38 VIN = 2.5V VOUT = 1.5V 37 36.5 36 35.5 2.490 2.485 2.480 35 34.5 0 0.25 0.5 0.75 1 Load Current (A) 8 1.25 1.5 2.475 -45 -5 25 55 85 115 Temperature (oC) Rev.E.01 AME, Inc. 750mA CMOS LDO AME8844 Load Regulation vs. Temperature Dropout Voltage vs. Load Current(2.5V) 400 Dropout Voltage @1.5A (mV) 0.30 Load Regulation (%) 0.25 0.20 0.15 0.10 0.05 0.00 -45 115 oC 85 oC 55 oC 350 300 25 oC 250 -5 oC -45 oC 200 150 100 50 0 -5 25 55 85 115 0.3 Temperature (oC) 0.6 0.9 1.2 1.5 Load Current (A) AME8844BEQA VADJ vs. Temperature Line Transient Response 1.244 VOUT (50mV/DIV) 1.243 VADJ (V) 1.242 1.241 1.240 1.239 VIN (2V/DIV) 1.238 1.237 1.236 1.235 -45 -5 25 55 85 0 115 Temperature ( oC) Time (20mS/DIV) VIN = 5V CIN = 4.7µF COUT = 4.7µF VOUT 1V/DIV 0 Time 500µS/DIV Rev.E.01 Current Limit Response 0V ILOAD 1A/DIV VOUT 10mV/DIV ILoad 1A/DIV Load Step 40mA to 1.5A CIN = 4.7µF COUT = 4.7µF VIN = 4.0V VOUT = 1.8V CIN = 4.7µF COUT = 4.7µF TR = TF = 1µS VOUT = 1.5V ILIM ISC 0A Time 1mS/DIV 9 AME, Inc. 750mA CMOS LDO AME8844 Short Circuit Current vs. VIN Current Limit vs. VIN 1.6 3 2.8 Current Limit (A) 2.4 1.4 Short Circuit Current (A) CIN = 4.7µF COUT = 4.7µF VOUT = 1.8V 2.6 2.2 2 1.8 1.6 1.4 CIN = 4.7µF COUT = 4.7µF 1.2 1 0.8 0.6 0.4 0.2 1.2 1 0 2 3 4 5 6 7 2 8 3 4 5 6 7 8 1250 1500 VIN (V) VIN (V) Overtemperature Shutdown Stability vs. ESR vs. ILoad 10000 IOUT 1A/DIV Unstable Region 1000 CL=5µF 100 CLESR (Ω ) 0A VOUT 1V/DIV VIN = 4V CIN = 4.7µF COUT = 4.7µF 10 1 Stable Region 0.1 0V Untested Region 0.01 0 250 500 750 1000 ILOAD (mA) Time 100mS/DIV Stability vs. ESR vs. ILoad Stability vs. ESR vs. ILoad 10000 10000 Unstable Region Unstable Region 1000 1000 CL=10µF CLESR (Ω ) CLESR (Ω ) 100 CL=2µF 100 10 1 Stable Region Stable Region 0.1 Untested Region Untested Region 250 500 750 1000 ILOAD (mA) 10 1 0.01 0.1 0.01 0 10 1250 1500 0.001 0 250 500 750 1000 1250 1500 ILOAD (mA) Rev.E.01 AME, Inc. 750mA CMOS LDO AME8844 n External Resistor Divider Table R1 (K Ohm) 1 Rev.E.01 5 10 20 R2(kohm)=(1.24*R1(kohm))/(Vout-1.24) Vout 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 3.05 3.10 2 20.67 11.27 7.75 5.90 4.77 4.00 3.44 3.02 2.70 2.43 2.21 2.03 1.88 1.75 1.63 1.53 1.44 1.36 1.29 1.23 1.17 1.12 1.07 1.02 0.98 0.95 0.91 0.88 0.85 0.82 0.79 0.77 0.75 0.73 0.70 0.69 0.67 41.33 22.55 15.50 11.81 9.54 8.00 6.89 6.05 5.39 4.86 4.43 4.07 3.76 3.49 3.26 3.06 2.88 2.73 2.58 2.46 2.34 2.23 2.14 2.05 1.97 1.89 1.82 1.76 1.70 1.64 1.59 1.54 1.49 1.45 1.41 1.37 1.33 103.33 56.36 38.75 29.52 23.85 20.00 17.22 15.12 13.48 12.16 11.07 10.16 9.39 8.73 8.16 7.65 7.21 6.81 6.46 6.14 5.85 5.59 5.34 5.12 4.92 4.73 4.56 4.40 4.25 4.11 3.97 3.85 3.73 3.63 3.52 3.43 3.33 206.67 112.73 77.50 59.05 47.69 40.00 34.44 30.24 26.96 24.31 22.14 20.33 18.79 17.46 16.32 15.31 14.42 13.63 12.92 12.28 11.70 11.17 10.69 10.25 9.84 9.47 9.12 8.79 8.49 8.21 7.95 7.70 7.47 7.25 7.05 6.85 6.67 413.33 225.45 155.00 118.10 95.38 80.00 68.89 60.49 53.91 48.63 44.29 40.66 37.58 34.93 32.63 30.62 28.84 27.25 25.83 24.55 23.40 22.34 21.38 20.50 19.68 18.93 18.24 17.59 16.99 16.42 15.90 15.40 14.94 14.50 14.09 13.70 13.33 11 AME, Inc. 750mA CMOS LDO AME8844 n External Resistor Divider Table (contd.) R1 (K Ohm) 1 5 10 20 R2(kohm)=(1.242*R1(kohm))/(Vout-1.242) Vout 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 3.95 4.00 4.05 4.10 4.15 4.20 4.25 4.30 4.35 4.40 4.45 4.50 4.55 4.60 4.65 4.70 4.75 4.80 4.85 4.90 4.95 5.00 2 0.65 0.63 0.62 0.60 0.59 0.57 0.56 0.55 0.54 0.53 0.51 0.50 0.49 0.48 0.48 0.47 0.46 0.45 0.44 0.43 0.43 0.42 0.41 0.41 0.40 0.39 0.39 0.38 0.37 0.37 0.36 0.36 0.35 0.35 0.34 0.34 0.33 0.33 1.30 1.27 1.23 1.20 1.18 1.15 1.12 1.10 1.07 1.05 1.03 1.01 0.99 0.97 0.95 0.93 0.92 0.90 0.88 0.87 0.85 0.84 0.82 0.81 0.80 0.78 0.77 0.76 0.75 0.74 0.73 0.72 0.71 0.70 0.69 0.68 0.67 0.66 3.25 3.16 3.08 3.01 2.94 2.87 2.81 2.74 2.68 2.63 2.57 2.52 2.47 2.42 2.38 2.33 2.29 2.25 2.21 2.17 2.13 2.09 2.06 2.03 1.99 1.96 1.93 1.90 1.87 1.85 1.82 1.79 1.77 1.74 1.72 1.69 1.67 1.65 6.49 6.33 6.17 6.02 5.88 5.74 5.61 5.49 5.37 5.25 5.15 5.04 4.94 4.84 4.75 4.66 4.58 4.49 4.41 4.34 4.26 4.19 4.12 4.05 3.99 3.92 3.86 3.80 3.75 3.69 3.64 3.58 3.53 3.48 3.43 3.39 3.34 3.30 12.98 12.65 12.34 12.04 11.75 11.48 11.22 10.97 10.74 10.51 10.29 10.08 9.88 9.69 9.50 9.32 9.15 8.99 8.83 8.67 8.52 8.38 8.24 8.10 7.97 7.85 7.73 7.61 7.49 7.38 7.27 7.17 7.07 6.97 6.87 6.78 6.68 6.60 Note: Small load(greater than 2 mA) is necessary as R1 or R2 is larger than 50 K Ohm. Otherwise, outputvoltage probably cannot be pulled down to 0 V on disable mode. 12 Rev.E.01 AME, Inc. 750mA CMOS LDO AME8844 n Tape and Reel Dimension MSOP-8 P PIN 1 W AME AME AME AME Carrier Tape, Number of Components Per Reel and Reel Size Rev.E.01 Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size MSOP-8 12.0±0.1 mm 4.0±0.1 mm 4000pcs 330±1 mm 13 AME, Inc. 750mA CMOS LDO AME8844 n Package Dimension MSOP-8 SYMBOLS Top View DETAIL A D e1 TOP PKG. BTM PKG. E1 θ L2 E L L1 PIN 1 I.D (SHINNY SURFACE) Front View A MAX MIN MAX A - 1.07 - 0.04197 A1 0.05 0.20 0.002 0.008 A2 0.81 0.92 0.032 0.036 b 0.28 0.38 0.011 0.015 b1 0.28 0.33 0.011 0.013 c 0.13 0.23 0.005 0.009 c1 0.13 0.17 0.005 0.006 D 2.90 3.10 0.114 0.122 E 4.77 4.98 0.188 0.196 E1 2.90 3.10 0.114 0.122 e 0.65 TYP 0.0255 TYP e1 1.95 TYP 0.0767 TYP A1 e b SECTION B-B End View b b1 BASE METAL B c B E1 See Detail A 14 c1 WITH PLATING 0.406 0.686 L1 0.94 REF L2 0.254 TYP θ A2 INCHES MIN L R0.127(0.005) TYP ALL CORNER & EDGES MILLIMETERS 0 o 8 0.01598 0.02701 0.037 REF 0.010 TYP o 0o 8o NOTE: 1. Controlling dimension : Millimeter, converted inchdimension are not necessarily exact. 2. Dimensiioning and tolerancing per ansi Y14.5m-1994. 3. Dimension "d" does not include mold flash,protrusion or gate burr, mold flash,protrusion and gate burr shall not exceed 0.15mm(0.006") per side. Dimension e1 do not include inter-lead flash or protrusion, inter-lead flash and protrusion shall not exceed 0.15mm(0.006") per side. 4. The package top be smaller than the package bottom. Dimension d and e1 are determined at outermost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 5. Dimension 'b' does not include dambar protrusion. Allowable dambar protrusion shall be 0.08mm(0.0031) total in excess of the "b" dimension at maximum material condition. Rev.E.01 www.ame.com.tw E-Mail: [email protected] Life Support Policy: These products of AME, Inc. are not authorized for use as critical components in life-support devices or systems, without the express written approval of the president of AME, Inc. AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and advises its customers to obtain the latest version of relevant information. AME, Inc. , January 2007 Document: 2013-DS8844-E.01 Corporate Headquarter U.S.A. (Subsidiary) AME, Inc. Analog Microelectronics, Inc. 2F, 302 Rui-Guang Road, Nei-Hu Dist. 3100 De La Cruz Blvd. Suite 201 Taipei 114 Taiwan. Tel: 886 2 2627-8687 Santa Clara, CA. 95054-2438 Tel : (408) 988-2388 Fax: 886 2 2659-2989 Fax: (408) 988-2489