CMLD6001DO SURFACE MOUNT PICOmini™ DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains Two (2) Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOmini™ surface mount package. These devices are designed for switching applications requiring extremely low leakage. MARKING CODE: C60 SOT-563 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Forward Surge Current, tp=1 µsec. Forward Surge Current, tp=1 sec. Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IF IFSM IFSM PD 75 100 250 4000 1000 250 UNITS V V mA mA mA mW TJ,Tstg ΘJA -65 to +150 500 °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL IR BVR VF VF VF CT trr TEST CONDITIONS VR=75V IR=100µA IF=1.0mA IF=10mA IF=100mA VR=0, f=1 MHz IR=IF=10mA, RL=100Ω Rec. to 1.0mA MIN MAX 500 100 0.85 0.95 1.1 2.0 3.0 UNITS pA V V V V pF µs R0 (3-November 2003) Central TM CMLD6001DO SURFACE MOUNT PICOmini™ DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES Semiconductor Corp. SOT-563 CASE - MECHANICAL OUTLINE D E A 6 E 5 4 B G 1 C F 3 2 H R0 LEAD CODE: 1) ANODE D1 2) NC 3) CATHODE D2 4) ANODE D2 5) NC 6) CATHODE D1 MARKING CODE: C60 Dual Opposing Configuration R0 (3-November 2003)