Central CMSD2005S TM Semiconductor Corp. SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD2005S contains two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-323 surface mount package, designed for applications requiring high voltage capability. MARKING CODE: B5D SOT-323 CASE MAXIMUM RATINGS (TA=25 °C) Continuous Reverse Voltage SYMBOL UNITS VR 300 Peak Repetitive Reverse Voltage VRRM 350 V Peak Repetitive Reverse Current IO 200 mA IF IFRM 225 mA Peak Repetitive Forward Current 625 mA Forward Surge Current, tp= 1 µs IFSM 4.0 A Forward Surge Current, tp= 1s IFSM 1.0 A PD 275 mW TJ,Tstg -65 to +150 °C ΘJA 455 °C/W Continuous Forward Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance V ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IR IR VR=280V VR=280V, TA=150°C BVR IR=100µA IF=20mA VF VF VF CT IF=100mA IF=200mA VR=0, f=1.0 MHz trr IR=IF=30mA, Rec. to 3.0mA, RL=100Ω MIN TYP MAX UNITS 100 nA 100 µA 350 V 0.87 V 1.0 V 1.25 V 5.0 pF 50 ns R0 (17-August 2004) Central TM Semiconductor Corp. CMSD2005S SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES SOT-323 CASE - MECHANICAL OUTLINE MARKING CODE: B5D 2 1 D1 D2 3 LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 R0 (17-August 2004)