Central CMPD7000E ENHANCED SPECIFICATION Semiconductor Corp. SURFACE MOUNT DUAL, SILICON SWITCHING DIODE SERIES CONNECTION DESCRIPTION: The Central Semiconductor CMPD7000E is an Enhanced version of the CMPD7000 Dual, Series Configuration, Ultra-High Speed Switching Diode. This device is manufactured by the epitaxial planar process, in an epoxy molded surface mount SOT-23 package, designed for high speed switching applications. MARKING CODE: C5CE FEATURED ENHANCED SPECIFICATIONS: ♦ BVR from 100V min to 120V min. SOT-23 CASE ♦ MAXIMUM RATINGS (TA=25 °C) ♦ Peak Repetitive Reverse Voltage TM VF from 1.1V max to 1.0V max. SYMBOL UNITS VRRM 120 V IO IFM 200 mA Peak Forward Current 500 mA Power Dissipation PD 350 mW TJ,Tstg -65 to +150 °C ΘJA 357 °C/W Average Forward Current Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) ♦ SYMBOL TEST CONDITIONS MIN TYP BVR IR=100µA VR=50V 120 150 IR IR ♦ ♦ ♦ ♦ IR VF VF VF CT trr VR=50V, TA=125°C VR=100V IF=1.0mA IF=10mA IF=100mA UNITS 300 nA 100 µA 500 nA V 0.55 0.59 0.65 V 0.67 0.72 0.77 V 0.85 0.91 1.0 V 1.5 pF 4.0 ns VR=0, f=1 MHz IR=IF=10mA, RL=100Ω, Rec. to 1.0mA MAX 2.0 Enhanced Specification R2 (6-August 2003) Central TM Semiconductor Corp. CMPD7000E ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODE SERIES CONNECTION SOT-23 CASE - MECHANICAL OUTLINE 2 1 D1 D2 3 LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: C5CE R2 (6-August 2003)