Central CMPT6517 NPN CMPT6520 PNP TM Semiconductor Corp. COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT6517, CMPT6520 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage driver and amplifier applications. MARKING CODE: CMPT6517: C1Z CMPT6520: C2Z SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 350 V Collector-Emitter Voltage VCEO 350 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 500 mA Base Current IB 250 mA Power Dissipation PD 350 mW TJ,Tstg -65 to +150 °C 357 °C/W Operating and Storage Junction Temperature ΘJA Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=250V MAX 50 UNITS nA 50 nA 50 nA IEBO IEBO VEB=5.0V (CMPT6517) VEB=4.0V (CMPT6520) BVCBO IC=100µA IC=1.0mA 350 350 V IE=10µA (CMPT6517) IE=10µA (CMPT6520) 6.0 V BVCEO BVEBO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) VBE(ON) hFE hFE V 5.0 V IC=10mA, IC=20mA, IB=1.0mA IB=2.0mA 0.30 V 0.35 V IC=30mA, IC=50mA, IB=3.0mA IB=5.0mA 0.50 V 1.0 V IC=10mA, IC=20mA, IB=1.0mA IB=2.0mA 0.75 V 0.85 V IC=30mA, IB=3.0mA IC=10V, IC=100mA 0.90 V 2.0 V VCE=10V, IC=1.0mA VCE=10V, IC=10mA 20 30 R4 (26-September 2002) Central TM Semiconductor Corp. CMPT6517 NPN CMPT6520 PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCE=10V, IC=30mA 30 MAX 200 hFE 200 SYMBOL hFE VCE=10V, IC=50mA VCE=10V, IC=100mA 20 40 Ceb VCE=20V, IC=10mA, f=20MHz VCB=20V, IC=0, f=1.0MHz VEB=0.5V, IE=0, f=1.0MHz (CMPT6517) Ceb VEB=0.5V, IE=0, f=1.0MHz (CMPT6520) hFE fT Ccb UNITS 15 200 MHz 6.0 pF 80 pF 100 pF SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODE: CMPT6517: C1Z CMPT6520: C2Z R4 (26-September 2002)