Central CXT5551 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. SOT-89 CASE MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA 180 160 UNITS V V 6.0 600 1.2 V mA W -65 to +150 104 °C °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob hfe NF TEST CONDITIONS VCB=120V VCB=120V, TA=100°C VEB=4.0V IC=100µA IC=1.0mA IE=10µA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200µA, RS=10Ω f=10Hz to 15.7kHz MIN MAX 50 50 50 180 160 6.0 0.15 0.20 1.00 1.00 80 80 30 100 50 UNITS nA µA nA V V V V V V V 250 300 6.0 200 MHz pF 8.0 dB R3 ( 20-December 2001) Central TM CXT5551 Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTORS SOT-89 CASE - MECHANICAL OUTLINE A E B G F H 1 C 3 2 J K R3 L M BOTTOM VIEW LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE R3 ( 20-December 2001)