Central CMUT5551E TM Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5551E is an NPN Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging. MARKING CODE: 5C1 FEATURES: • High Collector Breakdown Voltage 250V • Low Leakage Current 50nA Max • Low Saturation Voltage 100mV Max @ 50mA • Complementary Device CMUT5401E • SOT-523 Surface Mount Package SOT-523 CASE APPLICATIONS: • General purpose switching and amplification • Telephone applications MAXIMUM RATINGS: (TA=25°C) SYMBOL VCBO 250 UNITS V VCEO VEBO 220 V 6.0 V Collector Current IC 600 mA Power Dissipation PD 250 mW TJ,Tstg -65 to +150 °C ΘJA 500 °C/W ♦ Collector-Base Voltage ♦ Collector-Emitter Voltage Emitter-Base Voltage Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN SYMBOL ICBO ICBO VCB=120V VCB=120V, TA=100°C IEBO VEB=4.0V ♦ BVCBO ♦ BVCEO BVEBO ♦ ♦ VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) μA IC=100μ IC=1.0mA IE=10μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IC=50mA, IB=1.0mA IB=5.0mA MAX UNITS 50 nA 50 μA 50 nA 250 V 220 V 6.0 V 75 mV 100 mV 1.00 V 1.00 V ♦ Enhanced Specification R0 (10-May 2006) Central TM CMUT5551E Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN SYMBOL ♦ hFE ♦ hFE ♦ hFE ♦ hFE VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA 75 fT Cob VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz 100 Cib VEB=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz NF UNITS 120 120 VCE=5.0V, IC=50mA VCE=10V, IC=150mA hfe MAX 300 25 300 50 MHz 6.0 pF 20 pF 200 VCE=5.0V, IC=200μA, RS=10Ω f=10Hz to 15.7kHz 8.0 dB ♦ Enhanced Specification SOT-523 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODE: 5C1 R0 (10-May 2006)