Central CMPT2222AE ENHANCED SPECIFICATION NPN SILICON TRANSISTOR ENHANCED SPECIFICATION MAXIMUM RATINGS: (TA=25°C) ♦ Collector-Base Voltage ♦ Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ♦ ♦ ♦ ♦ ♦ ♦ ♦ Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface circuit and driver circuit applications. Marking Code is C1PE. Enhanced Specifications: ♦ BVCBO from 75V min to 100V min. (145V TYP) SOT-23 CASE ♦ ♦ ♦ ♦ VCE from 1.0V max to 0.5V max. (0.12V TYP) hFE from 40 to 60 min. (130 TYP) SYMBOL VCBO VCEO VEBO IC PD 100 45 6.0 600 350 UNITS V V V mA mW TJ, Tstg ΘJA -65 to +150 357 °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=60V ICBO VCB=60V, TA=125°C ICEV VCE=60V, VEB=3.0V IEBO VEB=3.0V BVCBO IC=10µA 100 145 BVCEO IC=10mA 45 53 BVEBO IE=10µA 6.0 VCE(SAT) IC=150mA, IB=15mA 0.92 VCE(SAT) IC=500mA, IB=50mA 0.12 VBE(SAT) IC=150mA, IB=15mA 0.6 VBE(SAT) IC=500mA, IB=50mA hFE VCE=10V, IC=0.1mA 100 210 hFE VCE=10V, IC=1.0mA 100 205 hFE VCE=10V, IC=10mA 100 205 hFE VCE=1.0V, IC=150mA 75 150 hFE VCE=10V, IC=150mA 100 hFE VCE=10V, IC=500mA 60 130 fT VCE=20V, IC=20mA, f=100MHz 300 ♦ TM Enhanced specification. MAX 10 10 10 10 0.15 0.50 1.2 2.0 UNITS nA µA nA nA V V V V V V V 300 MHz R0 (11-March 2002) Central TM CMPT2222AE ENHANCED SPECIFICATION NPN SILICON TRANSISTOR Semiconductor Corp. ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL Cob Cib hie hie hre hre hfe hfe hoe hoe rb’Cc NF td tr ts tf TEST CONDITIONS VCB=10V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCB=10V, IE=20mA, f=31.8MHz VCE=10V,IC=100µA, RS =1.0KΩ, f=1.0kHz VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, IC=150mA, IB1=IB2=15mA VCC=30V, IC=150mA, IB1=IB2=15mA MIN TYP 2.0 0.25 50 75 5.0 25 MAX 8.0 25 8.0 1.25 8.0 4.0 300 375 35 200 150 4.0 10 25 225 60 UNITS pF pF kΩ kΩ X10-4 X10-4 µmhos µmhos ps dB ns ns ns ns SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: C1PE R0 (11-March 2002)