RY A IN IM EL PR Central CTLSH05-40M621 Semiconductor Corp. SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE Top View DESCRIPTION: Bottom View The CENTRAL SEMICONDUCTOR CTLSH05-40M621 Low VF Schottky Diode packaged in a TLM™ (Tiny Leadless Module™), is a high quality Schottky Diode designed for applications where small size and operational effciency are the prime requirements. With a maximum power dissipation of 0.9W, and a very small package footprint (comparable to the SOT-563), this leadless package design is capable of dissipating over 3 times the power of similar devices in comparable sized surface mount packages. TLM621 CASE FEATURES: MARKING CODE: CH • Very Small Package Size • Current (IF=0.5A) • Low Forward Voltage Drop (VF=0.47V MAX @ 0.5A) APPLICATIONS: • • • • DC/DC Converters Voltage Clamping Protection Circuits Battery Powered Portable Equipment MAXIMUM RATINGS: (TA=25°C) N I M Peak Repetitive Reverse Voltage VRRM Continuous Forward Current IF I L Forward Surge Current, tp = 8ms E R Power Dissipation Operating and Storage Junction Temperature P Thermal Resistance ELECTRICAL CHARACTERISTICS: SYMBOL TEST CONDITIONS IR IR BVR VR= 10V VR= 30V IR= 500μA VF VF IF= 100μA IF= 1.0mA VF VF IF= 10mA IF= 100mA IF= 500mA VF CT • High Thermal Efficiency • Small TLM 2x1mm case Y R A SYMBOL Peak Repetitive Forward Current, tp ≤ 1ms TM IFRM UNITS 40 V 500 mA 3.5 A IFSM 10 A PD 0.9 W* TJ, Tstg -65 to +150 °C ΘJA 139 °C/W* (TA=25°C unless otherwise noted) VR=1.0V, f=1.0MHz *FR-4 Epoxy PCB with copper mounting pad area of 33mm2 MIN MAX UNITS 20 μA 100 μA V 0.13 V 0.21 V 40 0.27 V 0.35 V 0.47 V 50 pF R1 (27-April 2006) Central TM RY A N ICTLSH05-40M621 IM L RE P Semiconductor Corp. SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE TLM621 CASE - MECHANICAL OUTLINE Suggested mounting pad layout for maximum power dissipation (Dimensions in mm) For standard mounting see TLM621 Package Details LEAD CODE: 1) 2) 3) 4) 5) 6) CATHODE CATHODE ANODE ANODE CATHODE CATHODE MARKING CODE: CH R1 (27-April 2006)