Freescale Semiconductor Technical Data Document Number: 79076 Rev. 3.0, 3/2007 Electronic Ignition Control Circuit 79076 The 79076, in conjunction with an appropriate Freescale Power Darlington Transistor, provides an economical solution for automotive ignition applications. The 79076 offers optimum performance by providing closed loop operation of the Power Darlington in controlling the ignition coil current. ELECTRONIC IGNITION CONTROL CIRCUIT Features • • • • • • Hall or Variable Reluctance Sensor Input Ignition Coil Voltage Internally Limited to 375 V Coil Current Limiting to 7.5 A Output On–Time (Dwell) Control Dwell Feedback Control to Sense Coil Variation Pb-Free Packaging Designated by Suffix Code EG DW SUFFIX EG (PB-FREE) SUFFIX 98ASB42567B 16-PIN SOIC ORDERING INFORMATION Device MC79076DW/R2 MCZ79076EG/R2 79076 POWER GROUND RPM DETECT CURRENT SENSE DWELL CONTROL DWELL BYPASS REFERENCE EST BIAS VOLTAGE VCC ADVANCE SIGNAL GROUND REFERENCE/DWELL Figure 1. 79076 Simplified Application Diagram Freescale Semiconductor, Inc. reserves the right to change the detail specifications, as may be required, to permit improvements in the design of its products. © Freescale Semiconductor, Inc., 2007. All rights reserved. Temperature Range (TA) Package -30°C to 125°C 16 SOIC INTERNAL BLOCK DIAGRAM INTERNAL BLOCK DIAGRAM POWER GROUND DWELL CONTROL CURRENT SENSE RPM DETECT DWELL VCC Output BYPASS REFERENCE EST Logic and Control BIAS VOLTAGE Reference Generator ADVANCE SIGNAL GROUND REFERENCE/DWELL Figure 2. 79076 Simplified Internal Block Diagram 79076 2 Analog Integrated Circuit Device Data Freescale Semiconductor PIN CONNECTIONS PIN CONNECTIONS 1 16 NC Current Sense 2 15 NC Dwell 3 14 NC Power Ground VCC 4 13 Dwell Control Signal Ground 5 12 RPM Detect Reference/Dwell 6 11 Bypass Advance 7 10 Reference Bias Voltage 8 9 EST Figure 3. 79076 Pin Connections 79076 Analog Integrated Circuit Device Data Freescale Semiconductor 3 ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS Table 1. Maximum Ratings All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage to the device. Ratings Symbol Value VCC(SUS) 36 VCC(PK) 50 Unit ELECTRICAL RATINGS Supply Voltage V Steady-State Transient Conditions (1) Supply Current IT Transient Conditions (2) Transient Negative Current (tT = 60ms) Transient Negative Current (tT = 1ms) 1.0 A -100 mA -1.3 A Input Voltage (3) V VIN1 -5.0 to 30 VIN2 -5.0 to 24 Ref/Dwell Input Current IIN1 -20 Dwell ON Sink Current ID Ref/Dwell, Advance EST, Bypass A 0.3 Output ON (Operating) Output ON (t = 10ms) Dwell OFF Voltage (4) mA 0.8 VD(OFF) 5.0 V TSTG -65 to 150 °C TA -30 to 125 °C TJ -30 to 150 °C ØJ-A 80 °C/W TPPRT Note 6 °C THERMAL RATINGS Storage Temperature Operating Ambient Temperature THERMAL RESISTANCE Operating Junction Temperature Thermal Resistance (Junction-to-Ambient) - SO8 Peak Package Reflow Temperature During Reflow (5), (6) Notes 1. Survivability of device with transient voltage applied to VCC pin for a duration not to exceed 10ms. 2. Survivability of device with overvoltage applied to VCC pin producing the current for a duration not to exceed 10ms. 3. 4. Exceeding this voltage range on the function pin may cause permanent damage to the device. A zener diode is incorporated across collector to emitter of the output NPN device to prevent voltage overdrive of the external Darlington switch transistor. Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause malfunction or permanent damage to the device. Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow Temperature and Moisture Sensitivity Levels (MSL), Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e. MC33xxxD enter 33xxx), and review parametrics. 5. 6. 79076 4 Analog Integrated Circuit Device Data Freescale Semiconductor ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 2. Static Electrical Characteristics Characteristics noted under conditions 7.0 V ≤ VCC ≤ 18 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max 15 18 25 - 0.05 0.1 Unit INPUTS Advance Input Resistance R(A) (VCC = 16 V, Ref/Dwell = 1.0 V, Advance = 1.0 mA, EST = Bypass = 0 V) Advance Voltage (7) kΩ VTH(A) VCC = 16 V, Ref/Dwell = 1.0 V, EST = Bypass = 0 V V Advance Threshold Voltage (7) V (VCC = 16 V, Ref/Dwell = 1.0 V, EST = Bypass = 0 V,) Dwell = Reference = RPM Detect = open, Dwell Control = sinking 10 µA) Increasing VTH+(A) VB + 0.103 VB + 0.114 VB + 0.130 Decreasing VTH-(A) VB + 0.045 VB + 0.068 Hysteresis VHYS(A) 0.018 0.045 - R(BP) 6.0 9.2 16 kΩ V(BP) - 0.065 0.1 V Bypass Input Resistance - (VCC = 16 V, Ref/Dwell = Advance = 3.0 V, EST = Bypass = 0 V) Bypass Voltage (VCC = 16 V, Ref/Dwell = Advance = 1.0 V, EST = 0V) Bypass Threshold Voltage (8) V (Ref/Dwell = Advance = 1.0 V, EST = 3.0 V) Increasing VTH+(BP) VB + 1.6 VB + 0.188 VB + 2.1 Decreasing VTH-(BP) VB + 0.9 VB + 0.103 - Hysteresis VHYS(BP) 0.65 0.86 - 90 105 121 Current Sense Threshold Voltage (9) VTH(CS) (VCC = 16 V, Ref/Dwell = Advance = 1.0 V, EST = Bypass = 3.0 V) EST Input Resistance R(EST) (VCC = 16 V, Ref/Dwell = Advance = 1.0 V, Bypass = 3.0 V) EST Input Voltage (EST Mode) (VCC = 16 V, Ref/Dwell = Advance = 1.0 V, Bypass = 3.0 V) mV kΩ 7.0 10.3 - 0.07 V(EST) 18 0.1 V Notes 7. Advance Threshold Voltage is the positive (or negative) going voltage on Advance necessary cause the Dwell Control voltage to positive (or negative) going transition 2.0 V respectively. It is expressed as VTH±(A) = VB + VX where VB is the Bias Voltage and VX is the additional voltage necessary to attain the threshold. 8. Bypass Threshold Voltage is the positive (or negative) going voltage on Bypass necessary cause the Dwell voltage to positive (or negative) going transition 1.5 V respectively. It is expressed as VTH±(BP) = VB + VX where VB is the Bias Voltage and VX is the additional voltage necessary to attain the threshold. 9. Increasing voltage on Current Sense which when attained will cause Dwell to transition low to 1.5 V with a 10 mA load. 79076 Analog Integrated Circuit Device Data Freescale Semiconductor 5 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 2. Static Electrical Characteristics (continued) Characteristics noted under conditions 7.0 V ≤ VCC ≤ 18 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max EST Threshold Voltage (10) Unit V (Ref/Dwell = Advance = 1.0 V, Bypass = 3.0 V) Increasing Decreasing Hysteresis Ref/Dwell Current VTH+(EST) (11) 1.65 1.86 2.0 VTH-(EST) 0.8 0.89 - VHYS(EST) 0.79 0.97 - I(R/D) µA (VCC = 16 V, Advance = 1.0 V, EST = Bypass = 0 V) Ref/Dwell Voltage = 1.0 V -12 -1.38 1.0 Ref/Dwell Voltage = 20 V -1.0 0.02 5.0 Ref/Dwell Clamp Voltage V(R/D)CL V (VCC = 16 V, Advance = 1.0 V, EST = Bypass = 0 V) IR/D = 100µA (Sourcing) -0.01 -0.04 0.2 IR/D = 1.0mA (Sourcing) -0.62 -0.54 - Ref/Dwell Threshold (Bypass Mode) (12) V (Advance = 1.0 V, EST = Bypass = 0 V, Reference = sinking 10 µA) Increasing VTH+(R/D)BP VB + 0.09 VB + 0.106 VB + 0.116 Decreasing VTH-(R/D)BP VB + 0.018 VB + 0.03 - Hysteresis VHYS(R/D)BP 0.055 0.076 - Ref/Dwell Threshold (EST Mode) (12) (Advance = 1.0 V, EST = 0 V, Bypass = 3.0 V, Reference = sinking 10 µA) Increasing Decreasing Hysteresis V VTH+(R/D)EST VB + 0.445 VTH-(R/D)EST VB + 0.038 VB + 0.062 VHYS(R/D)EST 0.395 VB + 0.50 0.436 VB + 0.535 - Ref/Dwell Threshold (No Pump) (13) V (Advance = 1.0 V, EST = Bypass = 0 V, Dwell = sinking 10 mA) Increasing VTH+(R/D)NP VB + 0.003 VB + 0.118 VB + 0.128 Decreasing VTH-(R/D)NP VB + 0.021 VB + 0.047 - Hysteresis VHYS(R/D)NP VB + 0.013 VB + 0.072 - Notes 10. EST Threshold Voltage is the positive (or negative) going voltage on EST necessary cause the Dwell voltage to positive (or negative) going transition 1.5 V respectively. It is expressed as VTH±(EST) and is in reference to ground. 11. 12. Ref/Dwell can either source or sink current; A minus sign denotes the Ref/Dwell is sourcing current. Ref/Dwell Threshold Voltage (Bypass Mode) is the positive (or negative) going voltage on Ref/Dwell necessary cause the Reference voltage to positive (or negative) going transition 1.5 V respectively. It is expressed as VTH±(RD) = VB + VX where VB is the Bias Voltage and VX is the additional voltage necessary to attain the threshold. 13. Ref/Dwell Threshold Voltage (No Pump) is the positive (or negative) going voltage on Ref/Dwell necessary cause the Dwell voltage to positive (or negative) going transition 1.5 V respectively. It is expressed as VTH±(RD) = VB + VX where VB is the Bias Voltage and VX is the additional voltage necessary to attain the threshold. Advance = 1.0 V providing no input assist or "No Pump" influence of Dwell signal; Reference open. 79076 6 Analog Integrated Circuit Device Data Freescale Semiconductor ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 2. Static Electrical Characteristics (continued) Characteristics noted under conditions 7.0 V ≤ VCC ≤ 18 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Ref/Dwell Threshold (Max Pump) (14) Unit V (VCC = 16 V, Advance = 3.0 V, EST = Bypass = 0 V, Dwell sinking 10 mA, Dwell Control = open) Increasing Decreasing Hysteresis VTH+(R/D)MP VB + 0.175 VB + 0.474 VTH-(R/D)MP VB + 0.115 VB + 0.425 VB + 0.735 VB + 0.80 VHYS(R/D)MP VB + 0.025 VB + 0.048 - OUTPUTS Bias Resistance to Ground R(B) Dwell = VCC = Ref/Dwell = Reference = Dwell Control = open, Advance = 1.0 V, EST = Bypass = 0 V Bias Voltage (Bypass Mode) kΩ 0.55 0.68 0.9 V(B)BP Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V V 2.25 2.43 2.6 - 30 40 1.9 2.04 2.2 - 0.05 0.1 VCC = 16 V, ID = 160 mA, Ref/Dwell = Advance =3.0 V, EST = Bypass = 0 V - 0.14 0.24 VCC = 24 V, ID = 240 mA, Ref/Dwell = Advance =1.0 V, EST = Bypass = 3.0 V - 0.20 0.35 VCC = 36 V, ID = 360 mA, Ref/Dwell = Advance =1.0 V, EST = Bypass = 3.0 V - 0.29 0.5 -0.9 -0.98 -1.2 - 0.044 50 - 0.13 0.22 Bias Voltage Regulation (Bypass Mode) V(B)BP Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V Bias Voltage (EST Mode) V(B)EST VCC = 16 V, Ref/Dwell = Advance = 1.0 V, EST = 0 V, Bypass = 3.0 V Dwell Saturation Voltage Dwell Leakage Current (16) V(D)REV IR = sinking 0.3 mA, Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0V V I(D)KG VCC = 16 V, Dwell = 5.0 V, Ref/Dwell = Advance = 3.0 V, EST = Bypass = 0, Bias Voltage = Reference = open Reference Low (17) V V(D)SAT VCC = 4.0 V, ID = 40 mA, Ref/Dwell = Advance =3.0 V, EST = Bypass = 0 V Dwell Reverse Clamp Voltage (15) mV V µA V(R)LOW V Notes 14. Ref/Dwell Threshold Voltage (Max Pump) is the positive (or negative) going voltage on Ref/Dwell necessary cause the Dwell voltage to positive (or negative) going transition 1.5 V respectively. It is expressed as VTH±(RD) = VB + VX where VB is the Bias Voltage and VX is the additional voltage necessary to attain the threshold. Advance = 3.0 V providing maximum input assist or Max Pump" influence of Dwell signal; Reference = Dwell Control = open. 15. All pins open except Pwr Gnd with Dwell sinking 200 mA. 16. Limit conditions with Dwell output NPN in the OFF condition. 17. Reference saturation voltage to ground with 0.3mA of current going into the Reference. 79076 Analog Integrated Circuit Device Data Freescale Semiconductor 7 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 2. Static Electrical Characteristics (continued) Characteristics noted under conditions 7.0 V ≤ VCC ≤ 18 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Reference High/Un-Clamped (27) Symbol Typ Max 3.2 3.36 - V(R)HI/UNCL VCC = 4.0 V, IR = sourcing 100 mA, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass = 0 V Reference High/Clamped (27) Min Unit V V(R)HI/CL V VCC = 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass = 0 V IR = sourcing 10 µA - 5.41 6.0 IR = sourcing 1.0 mA 12 15.3 - CONTROLS Dwell Control Negative Clamp Voltage (27) V(DC)-CL VCC = 16 V, IDC = sourcing 100 µA, Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V Dwell Control Positive Clamp Voltage (27) 0.5 µA 30 47 58 18 33 48 - 1.1 2.5 -4.0 0.54 1.0 µA I(DC)SINK µA I(RPM)CHG VCC = 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass = 0 V RPM Detect Current (27) 8.4 I(DC)DISCHG VCC = 16 V, Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V, Dwell Control = 7.0 V RPM Detect Charge Current ON (27) 8.2 I(DC)CHG VCC = 16 V, Current Sense = 0.5 V, Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V Dwell Control Input Current (27) 0.8 V 8.0 VCC = 16 V, Ref/Dwell = 1.0 V, Advance = Dwell Control = 3.0 V, EST = Bypass = 0 V Dwell Control Discharge Current (27) 0.7 V(DC)+CL VCC = 16 V, IDC = sinking 100 µA, Ref/Dwell = 1.0 V, Advance = Open, EST = Bypass = 0 V Dwell Control Charge Current (27) V mA I(RPM)LKG µA VCC = 16 V, 1.0 V = Ref/Dwell = Advance = 3.0 V, EST = Bypass = 0 V RPM Detect = 0.5 V 04.0 0.55 1.0 RPM Detect = 1.5 V -0.1 0.01 0.1 RPM Detect Clamp Voltage (27) VCC = 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass = 0 V, RPM Detect = sourcing 16 µA Notes 18. 19. 20. 21. 22. 23. 24. 25. 26. V(RPM)CL V 2.4 2.5 2.7 Dwell Control adjusts the reference voltage of Dwell Comparator. Dwell Control. sourcing 100 µA. Dwell Control sinking 100 µA. Dwell Control at 3.0 V; Internal Dwell Control transistor OFF. Dwell Control at 3.0 V; Internal Dwell Control transistor ON. Dwell Control at 7.0 V; Internal Dwell Control transistor OFF. Q53 and Q54 both ON; Measured with RPM Detect voltage at 0.5 V to reflect maximum source current capability. See Typical Applications on page 10 Q53 and Q54 both OFF; Measured with RPM Detect voltage at 0.5 V and 1.5 V to reflect maximum leakage current. Typical Applications on page 10 Q53 and Q54 both ON; RPM Detect sinking 16 µA. Typical Applications on page 10 79076 8 Analog Integrated Circuit Device Data Freescale Semiconductor ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 2. Static Electrical Characteristics (continued) Characteristics noted under conditions 7.0 V ≤ VCC ≤ 18 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic RPM Detect Threshold (27) Symbol VCC = 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass = 0 V Typ Max 0.8 0.92 1.0 VTH-(RPM) VCC = 16 V, Ref/Dwell = Advance = 3.0 V, EST = Bypass = 0 V RPM Detect Charge Current Min Unit V I(RPM)CHG mA - -2.0 - Notes 27. Decreasing Threshold; RPM Detect voltage decreased from 0.6 V until Dwell voltage transitions low to 1.5 V with 10 mA load. 79076 Analog Integrated Circuit Device Data Freescale Semiconductor 9 TYPICAL APPLICATIONS TYPICAL APPLICATIONS 79076 10 Analog Integrated Circuit Device Data Freescale Semiconductor PACKAGING PACKAGE DIMENSIONS PACKAGING PACKAGE DIMENSIONS For the most current package revision, visit www.freescale.com and perform a keyword search using the “98A” listed below. DW SUFFIX EG SUFFIX (PB-FREE) 16-PIN PLASTIC PACKAGE 98ASB42567B ISSUE F 79076 Analog Integrated Circuit Device Data Freescale Semiconductor 11 REVISION HISTORY REVISION HISTORY REVISION 3.0 DATE 3/2007 DESCRIPTION OF CHANGES • • • • Implemented Revision History page Converted to Freescale format Added MCZ79076EG/R2 to the Ordering Information Removed MCCF79076 and all corresponding references. 79076 12 Analog Integrated Circuit Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Box 5405 Denver, Colorado 80217 1-800-441-2447 or 303-675-2140 Fax: 303-675-2150 [email protected] 79076 Rev. 3.0 3/2007 RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http:// www.freescale.com/epp. Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. 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