BC817.../BC818... NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807.../W, BC808.../W (PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking Pin Configuration Package BC817-16 6As 1=B 2=E 3=C - - - SOT23 BC817K-16* 6As 1=B 2=E 3=C - - - SOT23 BC817-25 6Bs 1=B 2=E 3=C - - - SOT23 BC817K-25* 6Bs 1=B 2=E 3=C - - - SOT23 BC817-25W 6Bs 1=B 2=E 3=C - - - SOT323 BC817K-25W* 6Bs 1=B 2=E 3=C - - - SOT323 BC817-40 6Cs 1=B 2=E 3=C - - - SOT23 BC817K-40* 6Cs 1=B 2=E 3=C - - - SOT23 BC817-40W 6Cs 1=B 2=E 3=C - - - SOT323 BC817K-40W* 6Cs 1=B 2=E 3=C - - - SOT323 BC818-16W 6Es 1=B 2=E 3=C - - - SOT323 BC818K-16W* 6Es 1=B 2=E 3=C - - - SOT323 BC818-25 6Fs 1=B 2=E 3=C - - - SOT23 BC818K-25* 6Fs 1=B 2=E 3=C - - - SOT23 BC818-40 6Gs 1=B 2=E 3=C - - - SOT23 BC818K-40* 6Gs 1=B 2=E 3=C - - - SOT23 * Shrinked chip version 1Pb-containing package may be available upon special request 1 2008-04-11 BC817.../BC818... Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BC817... 45 BC818... 25 Collector-base voltage VCBO BC817... 50 BC818... 30 5 Emitter-base voltage VEBO Collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 500 mW 330 TS ≤ 115 °C, BC817K, BC818K 500 TS ≤ 130 °C, BC817W/KW, BC818...W/KW 250 Junction temperature Tj Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS mA 1000 TS ≤ 79 °C, BC817, BC818 150 °C -65 ... 150 Value BC817, BC818 ≤ 215 BC817K, BC818K ≤ 70 BC817W/KW, BC818W/KW ≤ 80 1For Unit Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 2008-04-11 BC817.../BC818... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 , BC817... 45 - - IC = 10 mA, IB = 0 , BC818... 25 - - Collector-base breakdown voltage - V(BR)CBO IC = 10 µA, IE = 0 , BC817... 50 - - IC = 10 µA, IE = 0 , BC818... 30 - - 5 - - Emitter-base breakdown voltage V(BR)EBO V IE = 10 µA, IC = 0 Collector-base cutoff current µA I CBO VCB = 25 V, IE = 0 - - 0.1 VCB = 25 V, IE = 0 , TA = 150 °C - - 50 - - 100 Emitter-base cutoff current I EBO nA VEB = 4 V, IC = 0 DC current gain1) - h FE IC = 100 mA, V CE = 1 V, h FE-grp.16 IC = 100 mA, V CE = 1 V, h FE-grp.25 100 160 250 160 250 400 IC = 100 mA, V CE = 1 V, h FE-grp.40 IC = 300 mA, V CE = 1 V, h FE-grp.162) 250 350 630 60 - - IC = 300 mA, V CE = 1 V, h FE-grp.252) IC = 300 mA, V CE = 1 V, h FE-grp.402) 100 - - 170 - - IC = 500 mA, V CE = 1 V, all hFE-grps.3) 40 - - Collector-emitter saturation voltage1) VCEsat - - 0.7 IC = 500 mA, IB = 50 mA Base emitter saturation voltage 1) VBEsat - - 1.2 V IC = 500 mA, IB = 50 mA 1Pulse test: t < 300µs; D < 2% all BC817 and BC818 subtypes 3For all BC817K and BC818K subtypes 2For 3 2008-04-11 BC817.../BC818... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. - 170 - AC Characteristics Transition frequency fT MHz IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance pF Ccb VCB = 10 V, f = 1 MHz1) - 6 - VCB = 10 V, f = 1 MHz2) - 3 - VEB = 0.5 V, f = 1 MHz1) - 60 - VEB = 0.5 V, f = 1 MHz2) - 40 - Emitter-base capacitance 1For 2For Ceb all BC817 and BC818 subtypes all BC817K and BC818K subtypes 4 2008-04-11 BC817.../BC818... DC current gain hFE = ƒ(IC) VCE = 1 V DC current gain hFE = ƒ(IC) VCE = 1 V h FE-grp.16 h FE-grp.25 h FE 10 3 h FE 10 3 10 2 10 2 105 °C 85 °C 65 °C 25 °C -40 °C 105 °C 85 °C 65 °C 25 °C -40 °C 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 1 -5 10 0 A 10 10 -4 10 -3 10 -2 10 IC DC current gain hFE = ƒ(IC) VCE = 1 V -1 0 A 10 IC Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 h FE-grp.40 10 3 10 3 ΙC BC 817/818 EHP00223 mA 150 ˚C 25 ˚C -50 ˚C 10 2 hFE 5 10 2 10 1 105 °C 85 °C 65 °C 25 °C -40 °C 5 10 0 5 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 -1 0 A 10 IC 0 0.2 0.4 0.6 V 0.8 VCEsat 5 2008-04-11 BC817.../BC818... Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 10 BC 817/818 10 3 ΙC EHP00222 10 5 mA Ι CBO 150 ˚C 25 ˚C -50 ˚C 10 2 BC 817/818 EHP00221 nA 10 4 5 max 10 3 10 1 5 typ 10 2 10 0 10 1 5 10 -1 0 1.0 2.0 3.0 V 10 0 4.0 0 50 100 V BEsat Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz 10 3 TA Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) BC817, BC818: - - - , BC817K, BC818K: ___ EHP00218 75 pF MHz 5 60 CCB/CEB fT BC 817/818 150 ˚C CEB: BC817/BC818 CEB: BC817K/BC818K CCB: BC817/BC818 CCB: BC817K/BC818K 55 50 45 40 10 2 35 30 5 25 20 15 10 5 10 1 10 0 10 1 10 2 mA 0 0 10 3 2 4 6 8 10 12 14 16 V 20 VCB/V EB ΙC 6 2008-04-11 BC817.../BC818... Total power dissipation Ptot = ƒ(TS) BC817, BC818: - - - , BC817K, BC818K: ___ Total power dissipation Ptot = ƒ(TS) BC817W/KW, BC818W/KW 550 550 mW mW P tot 400 450 BC817K, BC818K BC817, BC818 400 P tot 450 350 350 300 300 250 250 200 200 150 150 100 100 50 50 0 0 15 30 45 60 90 105 120 °C 75 0 0 150 15 30 45 60 90 105 120 °C 75 TS 150 TS Permissible Pulse Load RthJS = ƒ(tp ) BC817, BC818 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BC817, BC818 10 3 10 4 Ptotmax /PtotDC - RthJS 10 2 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 0 10 3 10 1 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 2008-04-11 BC817.../BC818... Permissible Pulse Load RthJS = ƒ(tp ) BC817/K, BC818/K Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BC817K, BC818K 10 3 P totmax/P totDC RthJS 10 2 10 1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 - 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 TP s 10 0 10 0 TP Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load BC817W/KW, BC818W/KW Ptotmax/P totDC = ƒ(tp) BC817W/KW, BC818W/KW 10 3 10 3 Ptotmax /PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s tp 8 2008-04-11 Package SOT23 BC817.../BC818... 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 9 2008-04-11 Package SOT323 BC817.../BC818... Package Outline 0.9 ±0.1 2 ±0.2 0.3 +0.1 -0.05 0.1 MAX. 3x 0.1 M 0.1 A 1 2 1.25 ±0.1 0.1 MIN. 2.1 ±0.1 3 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 0.8 1.6 0.6 0.65 0.65 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BCR108W Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 10 2008-04-11 BC817.../BC818... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2008-04-11