INFINEON MMBTA56

SMBTA56/MMBTA56
PNP Silicon AF Transistor
• Low collector-emitter saturation voltage
2
3
• Complementary type: SMBTA06 / MMBTA06(NPN)
1
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
Type
Marking
SMBTA56/MMBTA56
s2G
Pin Configuration
1=B
2=E
Package
SOT23
3=C
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
80
Collector-base voltage
VCBO
80
Emitter-base voltage
VEBO
4
Collector current
IC
Peak collector current
ICM
Base current
IB
100
Peak base current
IBM
200
Total power dissipation-
Ptot
330
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Thermal Resistance
Parameter
Junction - soldering point2)
Symbol
RthJS
Value
500
1
Unit
V
mA
A
mA
TS ≤ 79°C
-65 ... 150
Value
≤ 215
Unit
K/W
1Pb-containing
2For
package may be available upon special request
calculation of RthJA please refer to Application Note Thermal Resistance
1
2007-04-19
SMBTA56/MMBTA56
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 80
V
IC = 1 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
80
-
-
V(BR)EBO
4
-
-
IC = 100 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
µA
I CBO
VCB = 80 V, IE = 0
-
-
0.1
VCB = 80 V, IE = 0 , TA = 150 °C
-
-
20
-
-
0.1
Collector-emitter cutoff current
I CEO
VCE = 60 V, IB = 0
DC current gain1)
-
h FE
IC = 10 mA, VCE = 1 V
100
-
-
IC = 100 mA, V CE = 1 V
100
-
-
VCEsat
-
-
0.25
VBE(ON)
-
-
1.2
fT
-
100
-
MHz
Ccb
-
7
-
pF
Collector-emitter saturation voltage1)
V
IC = 100 mA, IB = 10 mA
Base-emitter voltage1)
IC = 100 mA, V CE = 1 V
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
1Pulse
test: t < 300µs; D < 2%
2
2007-04-19
SMBTA56/MMBTA56
DC current gain hFE = ƒ(IC)
VCE = 1 V
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
EHP00852
10 3
EHP00850
10 3
mA
ΙC
h FE
100 C
25 C
-50C
100 C
10 2
25 C
10 2
5
-50 C
10 1
10 1
5
10 0 -1
10
10
0
10
1
10
2
mA 10
10 0
3
0.0
0.5
V
ΙC
V CEsat
Base-emitter saturation voltage
Collector current I C = ƒ(V BE)
IC = ƒ(V BEsat), hFE = 10
VCE = 1V
EHP00849
10 3
mA
mA
100 ˚C
25 ˚C
-50 ˚C
10 2
10 2
5
10 1
10 1
5
5
10 0
10 0
5
5
0
0.5
1.0
V
100 C
25 C
-50 C
ΙC
5
10 -1
EHP00846
10 3
ΙC
1.0
10 -1
1.5
0
0.5
V
1.0
1.5
V BE
V BEsat
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SMBTA56/MMBTA56
Collector cutoff current ICBO = ƒ(TA)
VCB = 80 V
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
fT
Ι CBO
max
10 3
5
EHP00848
10 3
MHz
EHP00851
10 4
nA
10 2
5
5
10 2
typ
10 1
5
5
10 0
5
10 1
10 0
10 -1
0
50
C 150
100
5 10 1
5 10 2
10 3
ΙC
TA
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
Total power dissipation Ptot = ƒ(TS)
65
pF
360
mW
55
300
50
270
45
Ptot
CCB(CEB )
mA
40
240
210
35
180
30
150
25
120
CEB
20
90
15
60
10
5
0
0
30
CCB
4
8
12
16
V
0
0
22
VCB(VEB)
4
15
30
45
60
75
90 105 120
°C 150
TS
2007-04-19
SMBTA56/MMBTA56
Permissible Pulse Load RthJS = ƒ(tp )
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
10 3
10 4
Ptotmax/ P totDC
K/W
RthJS
10 2
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1 -7
10
10 3
10
-6
10
-5
10
-4
10
-3
10
-2
10 1
s
10
10 0 -7
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
5
2007-04-19
Package SOT23
SMBTA56/MMBTA56
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
6
2007-04-19
SMBTA56/MMBTA56
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
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2007-04-19