Freescale Semiconductor Technical Data CATV Amplifier Module LIFETIME BUY Features • Specified for 128 - Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions Applications • CATV Systems Operating in the 40 to 870 MHz Frequency Range • Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems • Driver Amplifier in Linear General Purpose Applications • Output Stage Amplifier on Applications Requiring Low Power Dissipation Description • 24 Vdc Supply, 40 to 870 MHz, CATV Forward Amplifier Module • Replaced MHW8272A. There are no form, fit or function changes with this part replacement. • RoHS Compliant MHW8272AN 870 MHz 27.7 dB GAIN 128 - CHANNEL CATV AMPLIFIER MODULE CASE 1302 - 01, STYLE 1 Table 1. Maximum Ratings Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +55 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC - 20 to +100 °C Storage Temperature Range Tstg - 40 to +100 °C Table 2. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 — 870 MHz Power Gain 50 MHz 870 MHz Gp 26.2 27 27.2 27.7 27.8 29.5 dB Slope 40 - 870 MHz S 0 0.6 2 dB GF — 0.4 0.8 dB 20 — — — — 0.007 dB dB/MHz — - 69 - 64 — - 65 - 62 — - 69 - 64 NF — — — 6.0 5.5 7.0 dB IDC 280 310 350 mA Gain Flatness (40 - 870 MHz, Peak to Valley) Return Loss — Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) IRL/ORL Composite Second Order (Vout = + 38 dBmV/ch., Worst Case) 128- Channel FLAT CSO128 Cross Modulation Distortion @ Ch 2 (Vout = + 38 dBmV/ch., FM = 55 MHz) 128- Channel FLAT Composite Triple Beat (Vout = + 38 dBmV/ch., Worst Case) 128- Channel FLAT Noise Figure 50 MHz 870 MHz DC Current (VDC = 24 V, TC = 30°C) Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor XMD128 CTB128 dBc dBc dBc LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08 Document Number: MHW8272AN Rev. 5, 4/2006 MHW8272AN 1 NOTES MHW8272AN 2 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A S B A Z 0.010 M T F M A M V J F Q 2X R F 2X 6−32UNC−2B L 2X 0.010 U Z T A M M E 1 2 3 5 7 8 9 C N K E 4X 2X 0.010 M Z T A G 7X P D 0.020 Y INCHES MIN MAX −−− 1.775 −−− 1.085 −−− 0.840 0.015 0.021 0.465 0.510 0.300 0.325 0.100 BSC 0.156 BSC 0.315 0.355 1.000 BSC 0.165 BSC 0.100 BSC 0.148 0.168 −−− 0.600 1.500 BSC 0.200 BSC −−− 0.250 0.435 −−− 0.400 BSC 0.152 0.163 0.009 0.011 MILLIMETERS MIN MAX −−− 45.085 −−− 27.559 −−− 21.336 0.381 0.533 11.811 12.954 7.62 8.255 2.540 BSC 3.962 BSC 8.001 9.017 25.400 BSC 4.191 BSC 2.540 BSC 3.759 4.267 −−− 15.24 38.100 BSC 5.080 BSC −−− 6.350 11.049 −−− 10.160 BSC 3.861 4.140 0.229 0.279 Z X T W DIM A B C D E F G J K L N P Q R S U V W X Y Z X M T A M X M STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. RF INPUT GROUND GROUND DELETED VDC DELETED GROUND GROUND RF OUTPUT CASE 1302 - 01 ISSUE E MHW8272AN RF Device Data Freescale Semiconductor 3 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2006. All rights reserved. MHW8272AN Document Number: MHW8272AN 4Rev. 5, 4/2006 RF Device Data Freescale Semiconductor