Freescale Semiconductor Technical Data Document Number: MHL19338N Rev. 6, 8/2006 PCS Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA. • Third Order Intercept: 46 dBm Typ • Power Gain: 30 dB Typ (@ f = 1960 MHz) • Input VSWR v 1.5:1 Features • Excellent Phase Linearity and Group Delay Characteristics • Ideal for Feedforward Base Station Applications • N Suffix Indicates Lead - Free Terminations MHL19338N 1900 - 2000 MHz 4.0 W, 30 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP - 02, STYLE 1 Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Symbol Value Unit DC Supply Voltage Rating VDD 30 Vdc RF Input Power Pin +10 dBm Storage Temperature Range Tstg - 40 to +100 °C Operating Case Temperature Range TC - 20 to +100 °C Table 2. Electrical Characteristics (VDD = 28 Vdc, TC = 25°C; 50 Ω System) Characteristic Supply Current Symbol Min Typ Max Unit IDD — 500 525 mA Power Gain (f = 1960 MHz) Gp 29 30 32 dB Gain Flatness (f = 1900 - 2000 MHz) GF — 0.1 0.4 dB Power Output @ 1 dB Compression (f = 1950 MHz) P1dB 35 36 — dBm Third Order Intercept (f1 = 1950 MHz, f2 = 1955 MHz) ITO 45 46 — dBm Noise Figure NF — 4.2 4.5 dB (f = 2000 MHz) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MHL19338N 1 PACKAGE DIMENSIONS A A 2X G 0.020 (0.51) M T A R 1 T S 2 3 4 K W 0.020 (0.51) M 4X D T B M N L H F E C 4X P 0.020 (0.51) M A M M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION "F" TO CENTER OF LEADS. S J M S B M Q 0.008 (0.20) T SEATING PLANE T DIM A B C D E F G H J K L N P Q R S W INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.990 BSC 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC STYLE 1: PIN 1. 2. 3. 4. CASE: MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC RF INPUT VDD1 VDD2 RF OUTPUT GROUND CASE 301AP - 02 ISSUE E MHL19338N 2 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MHL19338N Document RF DeviceNumber: Data MHL19338N Rev. 6, 8/2006 Freescale Semiconductor 3