Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2, 3/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in Class AB applications. • Typical Single−Carrier W−CDMA Performance: VDD = 12 Volts, IDQ = 650 mA, Pout = 3 Watts Avg., f = 3550 MHz, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain —12 dB Drain Efficiency — 21% ACPR @ 5 MHz Offset — −41 dBc @ 3.84 MHz Channel Bandwidth • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Excellent Thermal Stability • In Tape and Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. MRFG35030R5 3550 MHz, 30 W, 12 V SINGLE W−CDMA POWER FET GaAs PHEMT CASE 1490−02, STYLE 1 Table 1. Maximum Ratings Rating Symbol Value Unit VDSS 15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 79 0.53 W W/°C Gate−Source Voltage VGS −5 Vdc RF Input Power Pin 37 dBm Tstg − 40 to +175 °C Tch 175 °C TC − 20 to +90 °C Symbol Value Unit RθJC 1.9 °C/W Drain−Source Voltage Storage Temperature Range Channel Temperature (1) Operating Case Temperature Range Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case 1. For reliable operation, the operating channel temperature should not exceed 150°C. © Freescale Semiconductor, Inc., 2005. All rights reserved. RF Device Data Freescale Semiconductor MRFG35030R5 1 Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off State Drain Current (VDS = 3.5 Vdc, VGS = −2 Vdc) IDSO — 15 425 µAdc Off State Current (VDS = 28.5 Vdc, VGS = −2.5 Vdc) IDSX — 5 42.5 mAdc VGS(th) −0.7 −0.85 −1.1 Vdc DC Characteristics Gate−Source Cut−off Voltage (VDS = 3.5 Vdc, IDS = 1 mA/mm) Functional Tests (In Freescale Test Fixture, 50 ohm system) (1) VDD = 12 Vdc, IDQ = 650 mA, Pout = 3 W Avg., f = 3550 MHz, Single−carrier W−CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 10 12 — dB Drain Efficiency ηD 17 21 — % ACPR — −41 −36 dBc — W Adjacent Channel Power Ratio Typical RF Performance (In Freescale Test Fixture, 50 οhm system) VDD = 12 Vdc, IDQ = 650 mA, f = 3550 MHz Output Power, 1 dB Compression Point, CW P1dB — 30 1. Measurements made with device in test fixture. MRFG35030R5 2 RF Device Data Freescale Semiconductor Z1 Z2 Z3 Z4 Z5, Z6 0.065″ x 0.500″ Microstrip 0.065″ x 0.185″ Microstrip 0.115″ x 0.350″ Microstrip 0.065″ x 0.215″ Microstrip 0.020″ x 0.527″ Microstrip Z7 Z8 Z9 PCB 0.085″ x 0.205″ Microstrip 0.065″ x 0.230″ Microstrip 0.065″ x 0.814″ Microstrip Rogers RO4350, 0.030″, εr = 3.5 Figure 1. MRFG35030 Test Circuit Schematic Table 4. MRFG35030 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C17 6.8 pF Chip Capacitors 100A6R8CP500X ATC C3, C16 10 pF Chip Capacitors 100A100JP500X ATC C4, C15 100 pF Chip Capacitors 100A101JP500X ATC C5, C14 100 pF Chip Capacitors 100B101JP500X ATC C6, C13 1000 pF Chip Capacitors 100B102JP500X ATC C7, C12 0.1 µF Chip Capacitors CDR33BX104AKWS Newark C8, C11 39K Chip Capacitors 200B393KP50X ATC C9, C10 22 µF, 35 V Tantalum Capacitors T491X226K035AS ATC C18 1.0 pF Chip Capacitor 08051J1R0BBT AVX C19 0.7 pF Chip Capacitor 08051J0R7BBT AVX C20 0.3 pF Chip Capacitor 08051J0R3BBT AVX R1 10 W, 1/4 W, 1% Resistor D55342M07B10J0R Dale MRFG35030R5 RF Device Data Freescale Semiconductor 3 CUT OUT AREA MRFG35030 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRFG35030 Test Circuit Component Layout MRFG35030R5 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS !" &()*+- / +0& 1 / ,& 2 / 345 6789:;<<6< (: 3 = 345 >;779 ;7+?6+%> ;@A8= / = + B = . <#C;C696%D * - !" η η & ))*.- #$%& () *+,- : / +0& 1 / ,& 2 / 345 6789:;<<6< (: 3 = 345 >;779 ;7+?6+%> ;@A8= / = + B = . <#C;C696%D * - : : : : : : : : : & )*+- & E)4)()*+0- Figure 3. Single−Carrier W−CDMA Power Gain and Drain Efficiency versus Output Power : #$%& () *+,- Figure 4. Single−Carrier W−CDMA Adjacent Channel Power Ratio and Input Return Loss versus Output Power = : : : *+- *.- = 345 >;779 ( = : : : = : = : = : := : B = 345 ( 7%< = 45 B = 345 ( 345 !;7 345 )F::)) *+- 2& )1) *345- Figure 5. CCDF W−CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single−Carrier Test Signal Figure 6. Single-Carrier W-CDMA Spectrum MRFG35030R5 RF Device Data Freescale Semiconductor 5 # / Ω "#$<0 2 / 345 9#;+ 2 / 345 2 / 345 2 / 345 / +0& 1 / ,& #$% / ( 8= f MHz Zload Ω Zsource Ω 3500 34.459 + j13.83 10.322 + j5.42 3550 35.460 + j14.19 10.400 + j5.44 3600 36.000 + j14.12 10.100 + j5.72 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. $%!$% 3;%0>678 %?#<@ 60 7+< "% 7!$% 3;%0>678 %?#<@ Z source Z load Figure 7. Series Equivalent Source and Load Impedance MRFG35030R5 6 RF Device Data Freescale Semiconductor Table 5. Class AB Common Source S−Parameters at VDD = 12 Vdc, IDQ = 650 mA S11 S21 S12 S22 f GHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 1.00 0.96 146.14 0.80 26.33 0.01 −26.74 0.88 164.54 1.05 0.96 143.94 0.80 22.43 0.01 −28.86 0.88 162.97 1.10 0.96 141.83 0.80 18.46 0.01 −31.83 0.88 161.29 1.15 0.96 139.54 0.80 14.44 0.01 −34.90 0.88 159.77 1.20 0.96 137.28 0.80 10.43 0.01 −37.88 0.88 158.47 1.25 0.96 134.74 0.80 6.28 0.01 −40.90 0.88 157.36 1.30 0.95 132.06 0.81 2.08 0.01 −44.27 0.88 156.46 1.35 0.95 129.35 0.82 −2.17 0.01 −47.36 0.87 155.56 1.40 0.95 126.57 0.84 −6.49 0.01 −51.09 0.86 154.65 1.45 0.95 123.71 0.86 −10.87 0.01 −55.57 0.85 153.72 1.50 0.95 120.59 0.89 −15.96 0.01 −59.77 0.84 151.32 1.55 0.94 117.35 0.92 −20.65 0.01 −64.36 0.83 150.22 1.60 0.94 113.90 0.95 −25.47 0.01 −68.43 0.82 149.03 1.65 0.94 110.38 0.99 −30.41 0.01 −72.98 0.80 147.80 1.70 0.93 106.54 1.03 −35.59 0.01 −78.34 0.79 146.32 1.75 0.93 102.65 1.08 −41.07 0.01 −83.48 0.78 144.63 1.80 0.93 98.32 1.14 −46.87 0.01 −88.75 0.77 142.65 1.85 0.92 93.83 1.19 −53.00 0.01 −94.75 0.76 140.48 1.90 0.92 89.08 1.26 −59.40 0.01 −100.91 0.75 138.36 1.95 0.91 84.07 1.32 −66.00 0.01 −106.97 0.73 136.24 2.00 0.91 78.68 1.39 −72.86 0.02 −113.46 0.72 134.10 2.05 0.90 73.15 1.46 −79.86 0.02 −120.27 0.70 132.02 2.10 0.90 67.33 1.54 −87.14 0.02 −127.45 0.68 130.09 2.15 0.89 61.07 1.62 −94.66 0.02 −135.04 0.65 127.98 2.20 0.89 54.56 1.71 −102.36 0.02 −142.85 0.63 125.90 2.25 0.89 47.64 1.80 −110.40 0.02 −150.91 0.60 123.85 2.30 0.89 40.29 1.89 −118.62 0.02 −159.34 0.56 121.74 2.35 0.89 32.60 1.99 −127.18 0.03 −168.04 0.53 119.56 2.40 0.89 24.42 2.09 −135.99 0.03 −177.20 0.49 117.39 2.45 0.88 16.02 2.20 −145.15 0.03 173.58 0.44 115.36 2.50 0.88 7.28 2.30 −154.53 0.03 163.81 0.40 113.49 2.55 0.88 −1.82 2.40 −164.19 0.03 153.87 0.35 111.97 2.60 0.88 −10.92 2.49 −174.07 0.03 143.74 0.30 111.53 2.65 0.88 −20.24 2.58 175.96 0.04 133.49 0.25 112.88 2.70 0.88 −29.71 2.66 165.78 0.04 122.87 0.21 117.12 2.75 0.87 −39.08 2.73 155.55 0.04 112.29 0.16 126.44 2.80 0.86 −48.39 2.79 145.30 0.04 101.82 0.14 143.32 2.85 0.85 −57.62 2.84 135.00 0.04 91.15 0.13 165.50 2.90 0.83 −66.46 2.89 124.74 0.04 80.47 0.16 −175.99 2.95 0.81 −75.13 2.93 114.46 0.05 69.79 0.20 −164.66 3.00 0.79 −83.52 2.98 104.21 0.05 59.07 0.24 −158.95 3.05 0.76 −91.51 3.02 93.91 0.05 48.50 0.29 −156.30 3.10 0.72 −99.34 3.06 83.64 0.05 37.72 0.35 −155.52 3.15 0.69 −106.90 3.11 73.20 0.05 26.81 0.40 −156.12 3.20 0.64 −114.08 3.17 62.60 0.05 15.81 0.45 −157.58 3.25 0.59 −120.87 3.24 51.75 0.06 4.40 0.50 −160.01 3.30 0.53 −127.33 3.31 40.49 0.06 −7.27 0.55 −163.32 MRFG35030R5 RF Device Data Freescale Semiconductor 7 Table 5. Class AB Common Source S−Parameters at VDD = 12 Vdc, IDQ = 650 mA (continued) S11 S21 S12 S22 f GHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 3.35 0.46 −132.64 3.37 28.77 0.06 −19.38 0.59 −167.40 3.40 0.38 −136.44 3.44 16.54 0.06 −32.21 0.64 −172.25 3.45 0.29 −136.21 3.48 3.73 0.06 −45.19 0.68 −177.89 3.50 0.22 −127.35 3.51 −9.59 0.07 −58.78 0.71 175.79 3.55 0.18 −102.40 3.50 −23.47 0.07 −73.20 0.73 168.90 3.60 0.22 −76.34 3.45 −37.84 0.07 −88.01 0.73 161.51 3.65 0.32 −66.79 3.36 −52.56 0.07 −103.17 0.71 153.97 3.70 0.43 −66.93 3.22 −67.50 0.06 −118.63 0.66 146.50 3.75 0.54 −71.16 3.03 −82.42 0.06 −134.11 0.59 139.64 3.80 0.64 −77.27 2.80 −97.34 0.06 −149.56 0.50 133.98 3.85 0.73 −84.04 2.55 −111.69 0.05 −164.55 0.40 130.85 3.90 0.80 −90.75 2.29 −125.67 0.05 −179.15 0.29 133.09 3.95 0.85 −97.18 2.03 −138.92 0.04 166.69 0.20 146.65 4.00 0.90 −103.05 1.79 −151.47 0.04 153.98 0.17 177.35 4.05 0.93 −108.56 1.56 −163.31 0.03 141.83 0.22 −158.21 4.10 0.95 −113.68 1.35 −174.50 0.03 130.44 0.29 −149.29 4.15 0.96 −118.39 1.17 175.04 0.03 119.35 0.38 −147.85 4.20 0.97 −122.39 1.01 165.37 0.02 108.97 0.45 −149.63 4.25 0.98 −126.23 0.87 156.24 0.02 99.25 0.52 −152.98 4.30 0.98 −129.72 0.75 147.79 0.02 90.59 0.58 −157.04 4.35 0.98 −132.86 0.65 139.97 0.02 83.55 0.63 −161.14 4.40 0.99 −135.98 0.57 132.62 0.01 76.85 0.68 −165.09 4.45 0.99 −138.73 0.49 125.76 0.01 69.46 0.72 −168.90 4.50 0.99 −141.42 0.43 119.49 0.01 62.85 0.76 −172.28 4.55 0.99 −144.00 0.37 113.69 0.01 56.84 0.79 −175.36 4.60 0.99 −146.52 0.33 108.35 0.01 51.52 0.82 −178.09 4.65 0.99 −148.89 0.29 103.42 0.01 46.39 0.85 179.48 4.70 0.99 −151.15 0.26 98.73 0.01 42.21 0.87 177.24 4.75 1.00 −153.53 0.24 94.28 0.01 37.59 0.89 175.01 4.80 1.00 −155.94 0.21 89.98 0.01 34.26 0.90 172.99 4.85 1.00 −158.19 0.19 85.78 0.01 30.24 0.91 170.86 4.90 1.00 −160.43 0.18 81.45 0.01 27.16 0.92 168.57 4.95 0.99 −162.40 0.16 78.17 0.01 25.24 0.92 165.89 5.00 1.00 −164.61 0.15 74.76 0.01 22.43 0.93 163.33 MRFG35030R5 8 RF Device Data Freescale Semiconductor NOTES MRFG35030R5 RF Device Data Freescale Semiconductor 9 NOTES MRFG35030R5 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS G B R (LID) 1 bbb M T A M B M S (INSULATOR) B (FLANGE) J 4X aaa M T A Q aaa M TA M M B M BM 3 F 2 2X D K aaa M T A M B M M (INSULATOR) aaa M T A M B )G = 3) ) ) =3& = = 3)G 4= = 3) 4 3)) = *=- ( 3 F) = M N (LID) bbb M T A M B M C E H A A (FLANGE) T SEATING PLANE DIM A B C D E F G H J K M N Q R S aaa bbb INCHES MIN MAX = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = MILLIMETERS MIN MAX = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = ) G = ) = = ) CASE 1490−02 ISSUE A MRFG35030R5 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E−mail: [email protected] RoHS-compliant and/or Pb- free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free counterparts. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005. All rights reserved. MRFG35030R5 Document Number: MRFG35030R5 Rev. 2, 3/2005 12 RF Device Data Freescale Semiconductor