FREESCALE MRFG35030R5

Freescale Semiconductor
Technical Data
MRFG35030R5
Rev. 2, 3/2005
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL base station applications with frequencies from 3400 to
3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in
Class AB applications.
• Typical Single−Carrier W−CDMA Performance: VDD = 12 Volts, IDQ =
650 mA, Pout = 3 Watts Avg., f = 3550 MHz, Channel Bandwidth =
3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain —12 dB
Drain Efficiency — 21%
ACPR @ 5 MHz Offset — −41 dBc @ 3.84 MHz Channel Bandwidth
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Excellent Thermal Stability
• In Tape and Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
MRFG35030R5
3550 MHz, 30 W, 12 V
SINGLE W−CDMA
POWER FET
GaAs PHEMT
CASE 1490−02, STYLE 1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
VDSS
15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
79
0.53
W
W/°C
Gate−Source Voltage
VGS
−5
Vdc
RF Input Power
Pin
37
dBm
Tstg
− 40 to +175
°C
Tch
175
°C
TC
− 20 to +90
°C
Symbol
Value
Unit
RθJC
1.9
°C/W
Drain−Source Voltage
Storage Temperature Range
Channel Temperature
(1)
Operating Case Temperature Range
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
1. For reliable operation, the operating channel temperature should not exceed 150°C.
© Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35030R5
1
Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off State Drain Current
(VDS = 3.5 Vdc, VGS = −2 Vdc)
IDSO
—
15
425
µAdc
Off State Current
(VDS = 28.5 Vdc, VGS = −2.5 Vdc)
IDSX
—
5
42.5
mAdc
VGS(th)
−0.7
−0.85
−1.1
Vdc
DC Characteristics
Gate−Source Cut−off Voltage
(VDS = 3.5 Vdc, IDS = 1 mA/mm)
Functional Tests (In Freescale Test Fixture, 50 ohm system) (1) VDD = 12 Vdc, IDQ = 650 mA, Pout = 3 W Avg., f = 3550 MHz,
Single−carrier W−CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
10
12
—
dB
Drain Efficiency
ηD
17
21
—
%
ACPR
—
−41
−36
dBc
—
W
Adjacent Channel Power Ratio
Typical RF Performance (In Freescale Test Fixture, 50 οhm system) VDD = 12 Vdc, IDQ = 650 mA, f = 3550 MHz
Output Power, 1 dB Compression Point, CW
P1dB
—
30
1. Measurements made with device in test fixture.
MRFG35030R5
2
RF Device Data
Freescale Semiconductor
Z1
Z2
Z3
Z4
Z5, Z6
0.065″ x 0.500″ Microstrip
0.065″ x 0.185″ Microstrip
0.115″ x 0.350″ Microstrip
0.065″ x 0.215″ Microstrip
0.020″ x 0.527″ Microstrip
Z7
Z8
Z9
PCB
0.085″ x 0.205″ Microstrip
0.065″ x 0.230″ Microstrip
0.065″ x 0.814″ Microstrip
Rogers RO4350, 0.030″, εr = 3.5
Figure 1. MRFG35030 Test Circuit Schematic
Table 4. MRFG35030 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C17
6.8 pF Chip Capacitors
100A6R8CP500X
ATC
C3, C16
10 pF Chip Capacitors
100A100JP500X
ATC
C4, C15
100 pF Chip Capacitors
100A101JP500X
ATC
C5, C14
100 pF Chip Capacitors
100B101JP500X
ATC
C6, C13
1000 pF Chip Capacitors
100B102JP500X
ATC
C7, C12
0.1 µF Chip Capacitors
CDR33BX104AKWS
Newark
C8, C11
39K Chip Capacitors
200B393KP50X
ATC
C9, C10
22 µF, 35 V Tantalum Capacitors
T491X226K035AS
ATC
C18
1.0 pF Chip Capacitor
08051J1R0BBT
AVX
C19
0.7 pF Chip Capacitor
08051J0R7BBT
AVX
C20
0.3 pF Chip Capacitor
08051J0R3BBT
AVX
R1
10 W, 1/4 W, 1% Resistor
D55342M07B10J0R
Dale
MRFG35030R5
RF Device Data
Freescale Semiconductor
3
CUT OUT AREA
MRFG35030
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRFG35030 Test Circuit Component Layout
MRFG35030R5
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
!" &()*+-
/ +0& 1 / ,& 2 / 345
6789:;<<6< (: 3
= 345 >;779 ;7+?6+%>
;@A8= / = + B =
. <#C;C696%D * -
!"
η
η & ))*.-
#$%& () *+,-
:
/ +0& 1 / ,& 2 / 345
6789:;<<6< (: 3
= 345 >;779 ;7+?6+%>
;@A8= / = + B =
. <#C;C696%D * -
:
:
:
:
:
:
:
:
:
& )*+-
& E)4)()*+0-
Figure 3. Single−Carrier W−CDMA Power Gain
and Drain Efficiency versus Output Power
:
#$%& () *+,-
Figure 4. Single−Carrier W−CDMA Adjacent
Channel Power Ratio and Input Return Loss
versus Output Power
=
:
:
:
*+-
*.-
= 345
>;779 (
=
:
:
:
=
:
=
:
=
:
:=
: B
= 345 (
7%< = 45
B
= 345 (
345
!;7 345
)F::)) *+-
2& )1) *345-
Figure 5. CCDF W−CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single−Carrier Test Signal
Figure 6. Single-Carrier W-CDMA Spectrum
MRFG35030R5
RF Device Data
Freescale Semiconductor
5
# / Ω
"#$<0
2 / 345
9#;+
2 / 345
2 / 345
2 / 345
/ +0& 1 / ,& #$% / ( 8=
f
MHz
Zload
Ω
Zsource
Ω
3500
34.459 + j13.83
10.322 + j5.42
3550
35.460 + j14.19
10.400 + j5.44
3600
36.000 + j14.12
10.100 + j5.72
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
$%!$%
3;%0>678
%?#<@
60
7+< "%
7!$%
3;%0>678
%?#<@
Z
source
Z
load
Figure 7. Series Equivalent Source and Load Impedance
MRFG35030R5
6
RF Device Data
Freescale Semiconductor
Table 5. Class AB Common Source S−Parameters at VDD = 12 Vdc, IDQ = 650 mA
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
1.00
0.96
146.14
0.80
26.33
0.01
−26.74
0.88
164.54
1.05
0.96
143.94
0.80
22.43
0.01
−28.86
0.88
162.97
1.10
0.96
141.83
0.80
18.46
0.01
−31.83
0.88
161.29
1.15
0.96
139.54
0.80
14.44
0.01
−34.90
0.88
159.77
1.20
0.96
137.28
0.80
10.43
0.01
−37.88
0.88
158.47
1.25
0.96
134.74
0.80
6.28
0.01
−40.90
0.88
157.36
1.30
0.95
132.06
0.81
2.08
0.01
−44.27
0.88
156.46
1.35
0.95
129.35
0.82
−2.17
0.01
−47.36
0.87
155.56
1.40
0.95
126.57
0.84
−6.49
0.01
−51.09
0.86
154.65
1.45
0.95
123.71
0.86
−10.87
0.01
−55.57
0.85
153.72
1.50
0.95
120.59
0.89
−15.96
0.01
−59.77
0.84
151.32
1.55
0.94
117.35
0.92
−20.65
0.01
−64.36
0.83
150.22
1.60
0.94
113.90
0.95
−25.47
0.01
−68.43
0.82
149.03
1.65
0.94
110.38
0.99
−30.41
0.01
−72.98
0.80
147.80
1.70
0.93
106.54
1.03
−35.59
0.01
−78.34
0.79
146.32
1.75
0.93
102.65
1.08
−41.07
0.01
−83.48
0.78
144.63
1.80
0.93
98.32
1.14
−46.87
0.01
−88.75
0.77
142.65
1.85
0.92
93.83
1.19
−53.00
0.01
−94.75
0.76
140.48
1.90
0.92
89.08
1.26
−59.40
0.01
−100.91
0.75
138.36
1.95
0.91
84.07
1.32
−66.00
0.01
−106.97
0.73
136.24
2.00
0.91
78.68
1.39
−72.86
0.02
−113.46
0.72
134.10
2.05
0.90
73.15
1.46
−79.86
0.02
−120.27
0.70
132.02
2.10
0.90
67.33
1.54
−87.14
0.02
−127.45
0.68
130.09
2.15
0.89
61.07
1.62
−94.66
0.02
−135.04
0.65
127.98
2.20
0.89
54.56
1.71
−102.36
0.02
−142.85
0.63
125.90
2.25
0.89
47.64
1.80
−110.40
0.02
−150.91
0.60
123.85
2.30
0.89
40.29
1.89
−118.62
0.02
−159.34
0.56
121.74
2.35
0.89
32.60
1.99
−127.18
0.03
−168.04
0.53
119.56
2.40
0.89
24.42
2.09
−135.99
0.03
−177.20
0.49
117.39
2.45
0.88
16.02
2.20
−145.15
0.03
173.58
0.44
115.36
2.50
0.88
7.28
2.30
−154.53
0.03
163.81
0.40
113.49
2.55
0.88
−1.82
2.40
−164.19
0.03
153.87
0.35
111.97
2.60
0.88
−10.92
2.49
−174.07
0.03
143.74
0.30
111.53
2.65
0.88
−20.24
2.58
175.96
0.04
133.49
0.25
112.88
2.70
0.88
−29.71
2.66
165.78
0.04
122.87
0.21
117.12
2.75
0.87
−39.08
2.73
155.55
0.04
112.29
0.16
126.44
2.80
0.86
−48.39
2.79
145.30
0.04
101.82
0.14
143.32
2.85
0.85
−57.62
2.84
135.00
0.04
91.15
0.13
165.50
2.90
0.83
−66.46
2.89
124.74
0.04
80.47
0.16
−175.99
2.95
0.81
−75.13
2.93
114.46
0.05
69.79
0.20
−164.66
3.00
0.79
−83.52
2.98
104.21
0.05
59.07
0.24
−158.95
3.05
0.76
−91.51
3.02
93.91
0.05
48.50
0.29
−156.30
3.10
0.72
−99.34
3.06
83.64
0.05
37.72
0.35
−155.52
3.15
0.69
−106.90
3.11
73.20
0.05
26.81
0.40
−156.12
3.20
0.64
−114.08
3.17
62.60
0.05
15.81
0.45
−157.58
3.25
0.59
−120.87
3.24
51.75
0.06
4.40
0.50
−160.01
3.30
0.53
−127.33
3.31
40.49
0.06
−7.27
0.55
−163.32
MRFG35030R5
RF Device Data
Freescale Semiconductor
7
Table 5. Class AB Common Source S−Parameters at VDD = 12 Vdc, IDQ = 650 mA (continued)
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
3.35
0.46
−132.64
3.37
28.77
0.06
−19.38
0.59
−167.40
3.40
0.38
−136.44
3.44
16.54
0.06
−32.21
0.64
−172.25
3.45
0.29
−136.21
3.48
3.73
0.06
−45.19
0.68
−177.89
3.50
0.22
−127.35
3.51
−9.59
0.07
−58.78
0.71
175.79
3.55
0.18
−102.40
3.50
−23.47
0.07
−73.20
0.73
168.90
3.60
0.22
−76.34
3.45
−37.84
0.07
−88.01
0.73
161.51
3.65
0.32
−66.79
3.36
−52.56
0.07
−103.17
0.71
153.97
3.70
0.43
−66.93
3.22
−67.50
0.06
−118.63
0.66
146.50
3.75
0.54
−71.16
3.03
−82.42
0.06
−134.11
0.59
139.64
3.80
0.64
−77.27
2.80
−97.34
0.06
−149.56
0.50
133.98
3.85
0.73
−84.04
2.55
−111.69
0.05
−164.55
0.40
130.85
3.90
0.80
−90.75
2.29
−125.67
0.05
−179.15
0.29
133.09
3.95
0.85
−97.18
2.03
−138.92
0.04
166.69
0.20
146.65
4.00
0.90
−103.05
1.79
−151.47
0.04
153.98
0.17
177.35
4.05
0.93
−108.56
1.56
−163.31
0.03
141.83
0.22
−158.21
4.10
0.95
−113.68
1.35
−174.50
0.03
130.44
0.29
−149.29
4.15
0.96
−118.39
1.17
175.04
0.03
119.35
0.38
−147.85
4.20
0.97
−122.39
1.01
165.37
0.02
108.97
0.45
−149.63
4.25
0.98
−126.23
0.87
156.24
0.02
99.25
0.52
−152.98
4.30
0.98
−129.72
0.75
147.79
0.02
90.59
0.58
−157.04
4.35
0.98
−132.86
0.65
139.97
0.02
83.55
0.63
−161.14
4.40
0.99
−135.98
0.57
132.62
0.01
76.85
0.68
−165.09
4.45
0.99
−138.73
0.49
125.76
0.01
69.46
0.72
−168.90
4.50
0.99
−141.42
0.43
119.49
0.01
62.85
0.76
−172.28
4.55
0.99
−144.00
0.37
113.69
0.01
56.84
0.79
−175.36
4.60
0.99
−146.52
0.33
108.35
0.01
51.52
0.82
−178.09
4.65
0.99
−148.89
0.29
103.42
0.01
46.39
0.85
179.48
4.70
0.99
−151.15
0.26
98.73
0.01
42.21
0.87
177.24
4.75
1.00
−153.53
0.24
94.28
0.01
37.59
0.89
175.01
4.80
1.00
−155.94
0.21
89.98
0.01
34.26
0.90
172.99
4.85
1.00
−158.19
0.19
85.78
0.01
30.24
0.91
170.86
4.90
1.00
−160.43
0.18
81.45
0.01
27.16
0.92
168.57
4.95
0.99
−162.40
0.16
78.17
0.01
25.24
0.92
165.89
5.00
1.00
−164.61
0.15
74.76
0.01
22.43
0.93
163.33
MRFG35030R5
8
RF Device Data
Freescale Semiconductor
NOTES
MRFG35030R5
RF Device Data
Freescale Semiconductor
9
NOTES
MRFG35030R5
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
G
B
R (LID)
1
bbb M T A
M
B
M
S (INSULATOR)
B
(FLANGE)
J
4X
aaa M T A
Q
aaa
M
TA
M
M
B
M
BM
3
F
2
2X D
K
aaa M T A
M
B
M
M (INSULATOR)
aaa M T A
M
B
)G
= 3) ) ) =3& =
= 3)G 4=
= 3) 4 3)) = *=- (
3 F) =
M
N (LID)
bbb M T A
M
B
M
C
E
H
A
A
(FLANGE)
T SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
S
aaa
bbb
INCHES
MIN
MAX
=
=
=
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=
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=
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=
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=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
MILLIMETERS
MIN
MAX
=
=
=
=
=
=
=
=
=
=
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=
=
=
=
=
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=
=
) G
= )
= = )
CASE 1490−02
ISSUE A
MRFG35030R5
RF Device Data
Freescale Semiconductor
11
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Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2005. All rights reserved.
MRFG35030R5
Document Number: MRFG35030R5
Rev. 2, 3/2005
12
RF Device Data
Freescale Semiconductor