ISSUED DATE :2004/11/15 REVISED DATE : GSMBZ5221B~GSMBZ5270B Description ZENER DIODES Package Dimensions Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. A A1 A2 D E HE REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board Ta=25 , Derate above 25 Total Device Dissipation Alumina Substrate**TA=25 , Derate above 25 Thermal Resistance Junction to Ambient Junction and Storage Temperature *FR-5 - 1.0 0.75 0.062 in. **Alumina-0.4 0.3 Symbol PD PD R JA Tj,Tstg 18A Test Current IZT(mA) 20 Min 2.280 GSMBZ5222B 18B 20 2.375 2.5 GSMBZ5223B 18C 20 2.565 2.7 GSMBZ5224B 18D 20 2.660 GSMBZ5225B 18E 20 GSMBZ5226B 8A 20 Marking Code GSMBZ5221B Unit 225 1.8 300 2.4 417 -55 to +150 mW mW/ mW mW/ /W 0.024 in. 99.5% alumina. Thermal Characteristics (VF=0.9V Max @ IF=10mA for all types.) Device Max Zener Voltage Vz(V) Nominal Max 2.4 2.520 ZZK IZ=0.25mA Max 1200 ZZT IZ=IZT Max 30 Max. Reverse Current IR(uA) @VR(V) 100 1.0 2.625 1250 30 100 1.0 2.835 1300 30 75 1.0 2.8 2.940 1400 30 75 1.0 2.850 3.0 3.150 1600 29 50 1.0 3.135 3.3 3.465 1600 28 25 1.0 GSMBZ5227B 8B 20 3.420 3.6 3.780 1700 24 15 1.0 GSMBZ5228B 8C 20 3.705 3.9 4.095 1900 23 10 1.0 GSMBZ5229B 8D 20 4.085 4.3 4.515 2000 22 5.0 1.0 GSMBZ5230B 8E 20 4.465 4.7 4.935 1900 19 5.0 2.0 GSMBZ5231B 8F 20 4.845 5.1 5.355 1600 17 5.0 2.0 GSMBZ5232B 8G 20 5.320 5.6 5.880 1600 17 5.0 3.0 GSMBZ5233B 8H 20 5.700 6.0 6.300 1600 7.0 5.0 3.5 GSMBZ5234B 8J 20 5.890 6.2 6.510 1000 7.0 5.0 4.0 GSMBZ5235B 8K 20 6.460 6.8 7.140 750 5.0 3.0 5.0 GSMBZ5236B 8L 20 7.125 7.5 7.875 500 6.0 3.0 6.0 GSMBZ5237B 8M 20 7.790 8.2 8.610 500 8.0 3.0 6.5 GSMBZ5238B 8N 20 8.265 8.7 9.135 600 8.0 3.0 6.5 GSMBZ5239B 8P 20 8.645 9.1 9.555 600 10 3.0 7.0 GSMBZ5240B 8Q 20 9.500 10 10.500 600 17 3.0 8.0 1/9 ISSUED DATE :2004/11/15 REVISED DATE : Test Current IZT(mA) 20 Zener Voltage Vz(V) Nominal Max 11 11.550 ZZK IZ=0.25mA Max 600 ZZT IZ=IZT Max 22 12.600 600 30 1.0 9.1 13.650 600 13 0.5 9.9 14 14.700 600 15 0.1 10 15 15.750 600 16 0.1 11 15.200 16 16.800 600 17 0.1 12 7.4 16.150 17 17.850 600 19 0.1 13 7.0 17.100 18 18.900 600 21 0.1 14 Device Marking Code GSMBZ5241B 8R GSMBZ5242B 8S 20 11.400 12 GSMBZ5243B 8T 9.5 12.350 13 GSMBZ5244B 8U 9.0 13.300 GSMBZ5245B 8V 8.5 14.250 GSMBZ5246B 8W 7.8 GSMBZ5247B 8X GSMBZ5248B 8Y Min 10.450 Max. Reverse Current IR(uA) @VR(V) 2.0 8.4 GSMBZ5249B 8Z 6.6 18.050 19 19.950 600 23 0.1 14 GSMBZ5250B 81A 6.2 19.000 20 21.000 600 25 0.1 15 GSMBZ5251B 81B 5.6 20.900 22 23.100 600 29 0.1 17 GSMBZ5252B 81C 5.2 22.800 24 25.200 600 33 0.1 18 GSMBZ5253B 81D 5.0 23.750 25 26.250 600 35 0.1 19 GSMBZ5254B 81E 4.6 25.650 27 28.350 600 41 0.1 21 GSMBZ5255B 81F 4.5 26.600 28 29.400 600 44 0.1 21 GSMBZ5256B 81G 4.2 28.500 30 31.500 600 49 0.1 23 GSMBZ5257B 81H 3.8 31.350 33 34.650 700 58 0.1 25 GSMBZ5258B 81J 3.4 34.200 36 37.800 700 70 0.1 27 GSMBZ5259B 81K 3.2 37.050 39 40.950 800 80 0.1 30 GSMBZ5260B 81L 3.0 40.850 43 45.150 900 93 0.1 33 GSMBZ5261B 81M 2.7 44.650 47 49.350 1000 105 0.1 36 GSMBZ5262B 81N 2.5 48.450 51 53.550 1100 125 0.1 39 GSMBZ5263B 81P 2.2 53.200 56 58.800 1300 150 0.1 43 GSMBZ5264B 81Q 2.1 57.000 60 63.000 1400 170 0.1 46 GSMBZ5265B 81R 2.0 58.900 62 65.100 1400 185 0.1 47 GSMBZ5266B 81S 1.8 64.600 68 71.400 1600 230 0.1 52 GSMBZ5267B 81T 1.7 71.250 75 78.750 1700 270 0.1 56 GSMBZ5268B 81U 1.5 77.900 82 86.100 2000 330 0.1 62 GSMBZ5269B 81V 1.4 82.650 87 91.350 2200 370 0.1 68 GSMBZ5270B 81W 1.4 86.450 91 95.550 2300 400 0.1 69 2/9 ISSUED DATE :2004/11/15 REVISED DATE : Characteristics Curve 3/9 ISSUED DATE :2004/11/15 REVISED DATE : 4/9 ISSUED DATE :2004/11/15 REVISED DATE : 5/9 ISSUED DATE :2004/11/15 REVISED DATE : 6/9 ISSUED DATE :2004/11/15 REVISED DATE : 7/9 ISSUED DATE :2004/11/15 REVISED DATE : 8/9 ISSUED DATE :2004/11/15 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 9/9