ISSUED DATE :2005/01/05 REVISED DATE : G D B AT 5 4 S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 3 0 V, C U R R E N T 2 0 0 m A Description The GDBAT54 is designed for high speed switching applications circuit protection, and voltage clamping. Package Dimensions Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. A A1 A2 D E HE REF. L b c Millimeter Min. Max. 0.20 0.25 0.10 Q1 0.40 0.40 0.18 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Symbol Ratings Junction Temperature Tj -55 ~ +125 Storage Temperature Tstg -55 ~ +150 Unit Peak Repetitive Reverse Voltage VR 30 V Forward Continuous Current IF 200 mA Peak Repetitive Forward Current IFRM 300 mA Surge Forward Current(t IFSM 600 mA PD 225 mW 1.0s) Total Power Dissipation at Ta = 25 Characteristics at Ta = 25 characteristics Symbol Min Max. Unit V(BR)R 30 - V IR=10 A VF(1) - 240 mV IF=0.1mA VF(2) - 320 mV IF=1mA VF(3) - 400 mV IF=10mA VF(4) - 500 mV IF=30mA VF(5) - 1000 mV IF=100mA IR - 2.0 A Total Capacitance CT - 10 pF VR=1V, f=1MHz Reverse Recover Time Trr - 5 ns IF=IR=10mA, IR(Rec)=1mA Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current Test Conditions VR=25V 1/2 ISSUED DATE :2005/01/05 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2