MIC5022 Micrel, Inc. MIC5022 Half-Bridge MOSFET Driver Not Recommended for New Designs General Description Features The MIC5022 half-bridge MOSFET driver is designed to operate at frequencies up to 100kHz (5kHz PWM for 2% to 100% duty cycle) and is an ideal choice for high speed applications such as motor control and SMPS (switch mode power supplies). A rising or falling edge on the input results in a current source pulse or sink pulse on the gate outputs. This output current pulse can turn on a 2000pF MOSFET in approximately 1µs. The MIC5022 then supplies a limited current (< 2mA), if necessary, to maintain the output states. Two overcurrent comparators with nominal trip voltages of 50mV make the MIC5022 ideal for use with current sensing MOSFETs. External low value resistors may be used instead of sensing MOSFETs for more precise overcurrent control. Optional external capacitors placed on the CTH and CTL pins may be used to individually control the current shutdown duty cycles from approximately 20% to <1%. Duty cycles from 20% to about 75% are possible with individual pull-up resistors from CTL and CTH to VDD. An open collector output provides a fault indication when either sense input is tripped. The MIC5022 is available in 16-pin wide SOIC and 14-pin plastic DIP packages. Other members of the MIC502x family include the MIC5020 low-side driver and the MIC5021 high-side driver. • • • • • • • • • • 12V to 36V operation 600ns rise time into 1000pF (high side) TTL compatible input with internal pull-down resistor Outputs interlocked to prevent cross conduction TTL compatible enable Fault output indication Individual overcurrent limits Gate protection Internal charge pump (high-side) Current source drive scheme reduces EMI Applications • Motor control • Switch-mode power supplies Ordering Information Part Number Temperature Range Package MIC5022BWM –40°C to +85°C 16-pin Wide SOIC MIC5022BN –40°C to +85°C 14-pin Plastic DIP Typical Application +12V to +36V TTL Input (PWM signal) 1 V DD 10µF 2 3 4 CTH 5 6 CTL 7 MIC5022 VB O O S T Input Gate H Fault Sense H– C TH Sense H+ Enable Gate L C TL Sense L– Gnd Sense L+ 14 13 2.7nF 12 11 RS 1 10 M 9 8 RS 2 DC Motor Control Application Micrel, Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 944-0970 • http://www.micrel.com July 2005 1 MIC5022 MIC5022 Micrel, Inc. Pin Configuration 1 V DD V B O O S T 14 1 V DD NC 16 2 Input Gate H 13 2 NC V B O O S T 15 3 Fault Sense H– 12 3 Input Gate H 14 4 CTH Sense H+ 11 4 Fault Sense H– 13 Gate L 10 5 CTH 5 Enable Sense H+ 12 6 CTL Sense L– 9 6 Enable 7 Gnd Sense L+ 8 7 CTL Sense L– 10 8 Gnd Sense L+ 9 DIP Package (N) Gate L 11 SOIC Package (WM) Pin Description DIP Pin No. SOIC Pin No. Pin Name Supply: +12V to +36V. Decouple with ≥ 10µF capacitor. 1 1 2 3 Input TTL Compatible Input: Logic high turns the high-side external MOSFET on and the low-side external MOSFET off. Logic low turns the high-side external MOSFET off and the low-side external MOSFET on. An internal pull-down returns an open pin to logic low. 3 4 Fault 4 5 CTH When either sense voltage exceeds threshold, open collector output is open circuit for 5µs (tG(ON)), then pulled low for tG(OFF). tG(OFF) is adjustable from CT. 5 6 Enable 6 7 7 8 Gnd 8 8 Sense L + Current Sense Comparator (+) Input, Low Side: Connect to source of lowside MOSFET. A built-in offset (nominal 50mV) in conjunction with RSENSE sets the load overcurrent trip point. 9 10 Sense L – Current Sense Comparator (–) Input, Low Side: Connect to the negative side of the low-side sense resistor. 10 11 Gate L Gate Drive, Low Side: Drives the gate of an external power MOSFET. Also limits VGS to 15V max. to prevent Gate to Source damage. Will sink and source current. 11 12 Sense H + Current Sense Comparator (+) Input, High Side: Connect to source of highside MOSFET. A built-in offset (nominal 50mV) in conjunction with RSENSE sets the load overcurrent trip point. 12 13 Source H – Current Sense Comparator (–) Input, High Side: Connect to the negative side of the high-side sense resistor. 13 14 Gate H Gate Drive, High Side: Drives the gate of an external power MOSFET. Also limits VGS to 15V max. to prevent Gate to Source damage. Will sink and source current. 14 15 VBOOST Charge Pump Boost Capacitor: A bootstrap capacitor from VBOOST to the MOSFET source pin supplies charge to quickly enhance the external MOSFET’s gate . MIC5022 VDD Pin Function CTL Retry Trimming Capacitor, High Side: Controls the off time (tG(OFF)) of the overcurrent retry cycle. (Duty cycle adjustment.) • Open = approx. 20% duty cycle. • Capacitor to Ground = approx. 20% to < 1% duty cycle. • Pullup resistor = approx. 20% to approx. 75% duty cycle. • Ground = maintained shutdown upon overcurrent condition. Output Enable: Disables operation of the output drivers; active high. An internal pull-down returns an open pin to logic low. Retry Trimming Capacitor, Low Side: Same function as CTH. Circuit Ground 2 July 2005 MIC5022 Micrel, Inc. Block Diagram 6V Internal Regulator I1 Fault CINT 2I1 CTH VDD Normal Sense H+ CHARGE PUMP Q1 Sense H– VB OOS T 1.4V 50mV 15V ON Input OFF ↑ ONE↓ SH O T 10I 2 6V Gate H I2 6V I1 Fault CINT 2I 1 CTL Normal Sense L+ Fault Q1 Sense L– 50mV VDD 1.4V 15V ON OFF ↑ ONE↓ SH O T 10I2 6V I2 Gate L Enable Transistor Count: 188 Absolute Maximum Ratings Operating Ratings Supply Voltage (VDD)................................................... +40V Input Voltage ...................................................–0.5V to 15V Sense Differential Voltage .......................................... ±6.5V Sense + or Sense – to Gnd ...........................–0.5V to +36V Fault Voltage ............................................................... +36V Current into Fault ........................................................ 50mA Timer Voltage (CT) ...................................................... +5.5V VBOOST Capacitor ..................................................... 0.01µF Supply Voltage (VDD)..................................... +12V to +36V Temperature Range SOIC ...................................................... –40°C to +85°C PDIP .................................................................... –40°C to +85°C July 2005 3 MIC5022 MIC5022 Micrel, Inc. Electrical Characteristics TA = 25°C, Gnd = 0V, VDD = 12V, Gate CL = 1500pF (IRF540 MOSFET) unless otherwise specificed Symbol Parameter Condition D.C. Supply Current Input Threshold VDD = 12V, Input = 0V VDD = 12V, Input = 5V Min 5 mA 6.0 10 mA 2.4 5 mA VDD = 36V, Input = 5V 3.0 25 mA 1.4 2.0 0.8 0.1 Input = 5V 10 20 40 µA 1.4 2.0 V tG(ON) 0.1 Fault Output Saturation Voltage Fault Current = 1.6mA Note 1 Fault Output Leakage Fault = 36V Current Limit Thresh., Low-Side Current Limit Thresh., High-Side Gate On Time, Fixed V V 0.8 Enable Hysteresis Gate On Voltage, Low-Side Units 2.5 Enable Threshold Gate On Voltage, High-Side Max VDD = 36V, Input = 0V Input Hysteresis Input Pull-Down Current Typ V 0.15 0.4 V –1 0.01 +1 µA Note 2 30 50 70 mV Note 2 30 50 70 mV VDD = 12V, Note 3 VDD = 12V, Note 3 16 18 21 V VDD = 36V, Note 3 46 49 52 V 10 11 VDD = 36V, Note 3 14 15 Sense Differential > 70mV 2 5 10 µs Sense Differential > 70mV, CT = 0pF 10 20 50 µs V 18 V tG(OFF) Gate Off Time, Adjustable Note 4 1.4 2.0 µs tR Gate Rise Time, High-Side Note 5 0.8 1.5 µs tDLH Gate Turn-On Delay, High-Side Gate Turn-Off Delay, High-Side Note 6 1.2 2.0 µs tF Gate Fall Time, High-Side Note 7 0.6 1.5 µs Gate Turn-On Delay, Low-Side Note 4 1.7 2.5 µs tR Gate Rise Time, Low-Side Note 8 0.7 1.5 µs Gate Turn-Off Delay, Low-Side Note 9 0.5 1.0 µs Gate Fall Time, Low-Side Note 10 1.0 1.5 µs tDHL tDLH tDHL tF Note 1 Note 2 Note 3 Voltage remains low for time affected by CT. When using sense MOSFETs, it is recommended that RSENSE < 50Ω. Higher values may affect the sense MOSFET’s current transfer ratio. DC measurement. Note 4 Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 0V to 2V. Note 5 Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 17V. Note 6 Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 20V (Gate on voltage) to 17V. Note 7 Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 17V to 2V. Note 8 Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 10V. Note 9 Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 15V (Gate on voltage) to 10V. Note 10 Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 10V to 2V. MIC5022 4 July 2005 MIC5022 Micrel, Inc. 25 VIN = 0V 20 0 10 15 20 25 30 35 40 VSUPPLY (V) 0.5 0 5 NOTE: INCLUDES PROPAGATION DELAY & CROSS CONDUCTION LOCKOUT 10 15 20 25 30 35 40 VSUPPLY (V) Overcurrent Retry Duty Cycle vs. Timing Capacitance 25 15 HIGH SIDE RETRY DUTY CYCLE (%) 20 tON = 5µS VSUPPLY = 12V 10 NOTE: tON, tOFF TIME 5 INDEPENDENT OF VSUPPLY 0 0.1 tO N (µS) VGATE H = VSUPPLY + 10V CL = CH = 1500pF CBOOST = 0.01µF 1 10 100 1000 10000 CTH (pF) tO N 4V (µS) 1.5 VGATE = VSUPPLY + 4V C = CH = 1500pF 1.0 CL BOOST = 0.01µF 0.5 5 5.0 4.5 VGATE H = VSUPPLY + 4V 4.0 CL = CH V = 12V 3.5 SUPPLY 3.0 HIGH-SIDE 2.5 2.0 PROP. 1.5 DELAY 1.0 NOTE: INCLUDES PROPAGATION DELAY & CROSS CONDUCTION 0.5 LOCKOUT 0.0 1x100 1x101 1x102 1x103 1x104 1x105 CGATE (pF) Overcurrent Retry Duty Cycle vs. Timing Capacitance 25.0 20.0 tON = 5µS VSUPPLY = 12V 15.0 LOW SIDE 10.0 80 3.5 10 15 20 25 30 35 40 VSUPPLY (V) Gate Turn-On/Off Delay vs. Gate Capacitance VGATE L = 4V 3.0 CL = CH VSUPPLY = 12V 2.5 2.0 1.5 LOW-SIDE NOTE: INCLUDES PROPAGATION DELAY & CROSS CONDUCTION LOCKOUT PROP. DELAY 1.0 1x100 1x101 1x102 1x103 1x104 1x105 CGATE (pF) 100 Input Current vs. Input Voltage VSUPPLY = 12V 80 60 40 20 5.0 0.0 0.1 NOTE: INCLUDES PROPAGATION DELAY & CROSS CONDUCTION LOCKOUT 0.0 5 10 15 20 25 30 35 40 VSUPPLY (V) Gate Turn-On/Off Delay vs. Gate Capacitance Gate Turn-On Delay vs. Supply Voltage RETRY DUTY CYCLE (%) tO N 10V (µS) 1 10 5 2 1.5 2.0 15 VIN = 5V Gate Turn-On Delay vs. Supply Voltage 2.5 tO N (µS) 2.5 Gate to Source Voltage vs. Supply Voltage IIN (µA) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 5 Supply Current vs. Supply Voltage VG ATE H (V) ISU PPLY (mA) Typical Characteristics 1 10 100 1000 10000 CTL (pF) 0 0 5 10 15 VIN (V) 20 25 Sense Threshold vs. Temperature VOLTAGE (mV) 70 60 50 40 30 20 -60 -30 0 30 60 90 120 150 TEMPERATURE °C) ( July 2005 5 MIC5022 MIC5022 Micrel, Inc. Input Enable Gate H Gate L Sense H+, H– Differential Sense L+, L– Differential Fault TTL (H) 0V TTL (H) 0V 15V (max.) Source 15V (max.) 0V 50mV 0V 50mV 0V Off On Timing Diagram 1. Normal Operation 5µs Input Enable Gate H Gate L Sense H+, H– Differential Sense L+, L– Differential Fault 20µs TTL (H) 0V TTL (H) 0V 15V (max.) 0V 15V (max.) 0V 50mV 0V 50mV 0V Off On Timing Diagram 2. Overcurrent Fault with Retry 5µs Input Enable Gate H Gate L Sense H+, H– Differential Sense L+, L– Differential Fault TTL (H) 0V TTL (H) 0V 15V (max.) Source 15V (max.) 0V 50mV 0V 50mV 0V Off On Timing Diagram 3. Overcurrent Fault with Maintained Off MIC5022 6 July 2005 MIC5022 Micrel, Inc. Functional Description Refer to the MIC5022 block diagram. Input A signal greater than 1.4V (nominal) applied to the MIC5022 INPUT causes gate enhancement on an external MOSFET connected to GATE H turning the high-side MOSFET on. At the same time internal logic removes gate enhancement from an external MOSFET connected to GATE L, turning the low-side MOSFET off. An internal pull-down resistor insures that an open INPUT remains low, keeping the external high-side MOSFET turned off and the low-side MOSFET turned on. Enable (Active Low) A signal greater than 1.4V (nominal) applied to the MIC5022 ENABLE keeps both GATE outputs off. An internal pull-down resistor insures that the MIC5022 is enabled if the pin is open. Gate Outputs Rapid rise and fall times on the GATE output are possible because each input state change triggers a one-shot which activates a high-value current sink (10I2) for a short time. This draws a high current though a current mirror circuit causing the output transistors to quickly charge or discharge the external FET’s gate. A second current sink continuously draws the lower value of current used to maintain the gate voltage for the selected state. Internal 15V Zener diodes protect the external high-side and low-side MOSFETs by limiting the gate to source voltage. Charge Pump (High-Side) An internal charge pump utilizes an external “boost” capacitor connected between VBOOST and the source of the external FET (refer to Typical Application). The boost capacitor stores charge when the FET is off. As the FET begins to turn on the voltage on the source side of the capacitor increases (because it is on the high side of the load) raising the VBOOST pin voltage. The boost capacitor charge is directed through the gate pin to quickly charge the FET’s gate to 15V maximum above VDD. The internal charge pump maintains the gate voltage by supplying a small current as needed. Overcurrent Limiting (High or Low-Side) Current source I1 charges CINT upon power up. An optional external capacitor connected to CT is kept discharged through a FET Q1. A fault condition (> 50mV from SENSE + to SENSE –) causes the overcurrent comparator to enable current sink 2I1 which overcomes current source I1 to discharge CINT in about 5µs time. When CINT is discharged, the INPUT is disabled, the FAULT output is enabled, and CINT and CT are ready to be charged. Since the INPUT is disabled the GATE output turns off. When the GATE output turns off the FET, the overcurrent signal is removed from the sense inputs which deactivates current sink 2I1. This allows CINT and the optional capacitor connected to CT to recharge. A Schmitt trigger delays the retry while the capacitor(s) recharge. Retry delay is increased by connecting a capacitor connected to CT (optional). The MIC5022’s low-side driver may be used without current sensing by grounding both SENSE + and SENSE – pins. The high-side driver may be used without current sensing by connecting SENSE + and SENSE – to the source of the external high-side MOSFET. Fault Output The FAULT output is an open collector transistor. FAULT is active at approximately the same time the output is disabled by a fault condition (5µs after an overcurrent condition is sensed). The FAULT output is open circuit (off) during each successive retry (5µs). Typical Full-Bridge Application +12V to +20V 10µF TTL Input (PWM signal) 1 2 3 4 5 6 7 MIC5022 VDD VBOOST Input Gate H Fault Sense H– CTH Sense H+ Enable Gate L CTL Sense L– Gnd Sense L+ 14 14 13 12 11 10 0.01µF 0.01µF Load 13 12 11 10 9 9 8 8 MIC5022 VBOOST VDD Gate H Input Sense H– Fault Sense H+ Gate L CTH Enable Sense L– CTL Sense L+ Gnd 1 10µF 2 TTL Input (PWM signal) 3 4 5 6 7 Figure 1. Basic Full-Bridge Circuit July 2005 7 MIC5022 MIC5022 Micrel, Inc. Applications Information The MIC5022 MOSFET driver is designed for half-bridge switching applications where overcurrent limiting and high speed are required. The MIC5022 can control MOSFETs that switch voltages up to 36V. The MIC5022 functionally includes the MIC5020 and MIC5021 with additional circuitry to coordinate the operation of the high and low-side drivers. Since most output considerations are similar, refer to the MIC5020 and MIC5021 data sheets for additional applications information. Supply Voltage The MIC5022’s supply input (VDD) is rated up to 36V. The supply voltage must be equal to or greater than the voltage applied to the drain of the external N-channel MOSFET. A 16V minimum supply is recommended to produce continuous on-state, gate drive voltage for standard MOSFETs (10V nominal gate enhancement). When the driver is powered from a 12V to 16V supply, a logic-level MOSFET is recommended (5V nominal gate enhancement). PWM operation may produce satisfactory gate enhancement at lower supply voltages. This occurs when fast switching repetition makes the boost capacitor a more significant voltage supply than the internal charge pump. Overcurrent Limiting Separate high and low-side 50mV comparators are provided for current sensing. The low level trip point minimizes I2R losses when a power resistor is used for current sensing. The adjustable retry feature can be used to handle loads with high initial currents, such as lamps or heating elements, and can be adjusted from the CT connection. CT to ground causes maintained gate drive shutdown following an overcurrent condition. CT open, or a capacitor to ground, causes automatic retry. The default duty cycle (CT open) is approximately 20% (the high side is slightly greater than the low side). Refer to the typical characteristics when selecting a capacitor for a reduced duty cycle. CT through a pull-up resistor to VDD increases the duty cycle. Increasing the duty cycle increases the power dissipation in the load and MOSFET under a “fault” condition. Circuits may become unstable at a duty cycle of about 75% or higher, depending on conditions. Caution: The MIC5022 may be damaged if the voltage applied to CT exceeds the absolute maximum voltage rating. Boost Capacitor Selection For 12V to 20V operation, the boost capacitor should be 0.01µF; and for 12V to 36V operation, the boost capacitor should be 2.7nF; both connected between VBOOST and the MOSFET source. The preferred configuration for 20V to 36V operation is a 0.01µF capacitor connected between VBOOST and VDD . Refer to the MIC5021 data sheet for examples. Do not connect capacitors between VBOOST and the MOSFET source and between VBOOST and VDD at the same time. Larger capacitors than specified may damage the MIC5022. MIC5022 Circuits Without Current Sensing Current sensing may be omitted by connecting the high-side SENSE + and SENSE – pins to the source of the MOSFET or the supply and the low-side SENSE + and SENSE – pins to ground. Do not connect the high-side sense pins to ground. Inductive Load Precautions Circuits controlling inductive loads require precautions when controlled by the MIC5022. Wire wound resistors, which are sometimes used to simulate other loads, can also show significant inductive properties. Sense Pin Considerations The sense pins of the MIC5022 are sensitive to negative voltages. If a voltage spike is too negative (below approximately –0.5V), current will be drawn from functional sections of the IC resulting in unpredictable circuit behavior or damage. Resistors and Schottky diodes may be used to protect the sense pins from the negative spikes. Refer to the MIC5021 data sheet for details. High-Side Sensing For the high-side driver, sensing the current on the supply side of the high-side MOSFET locates the SENSE pins away from the inductive spike. Refer to the MIC5021 data sheet for details. Low-Temperature Operation As the temperature of the MIC5022AJB (extended temperature range version—no longer available) approaches –55°C, the driver’s off-state, gate-output offset from ground increases. If the operating environment of the MIC5022AJB includes low temperatures (–40°C to –55°C), add an external 2.2MΩ resistor from gate-to-source or from gate-to-ground. This assures that the driver’s gate-to-source voltage is far below the external MOSFET’s gate threshold voltage, forcing the MOSFET fully off. Refer to the MIC5020 and MIC5021 data sheets for examples. The gate-to-source configuration is appropriate for resistive and inductive loads. This also causes the smallest decrease in gate output voltage. The gate-to-ground configuration is appropriate for resistive, inductive, or capacitive loads. This configuration will de-crease the gate output voltage slightly more than the gate-to-source configuration. Full-Bridge Motor Control An application for two MIC5022s is the full-bridge motor control circuit. Two high or two low-side sense inputs may be used for overcurrent detection. (Low-side sensing is shown in Figure 2). Sensing at four locations is usually unnecessary. When switching inductive loads, such as motors, it is desirable to place the high-side sense inputs on the supply side of the MOSFETs. The helps prevent the inductive spikes that occur upon load shutoff from affecting the sense inputs. 8 July 2005 MIC5022 Micrel, Inc. +12V to +20V 10µF 1 TTL Input (PWM signal) 2 3 4 5 6 7 MIC5022 VDD VBOOST Input Gate H Fault Sense H– CTH Sense H+ Gate L Enable CTL Sense L– Gnd Sense L+ 14 14 13 13 12 12 11 0.01µF 0.01µF M 10 11 10 9 9 RS2 RS1 8 8 MIC5022 VBOOST VDD Gate H Input Sense H– Fault Sense H+ Gate L CTH Enable Sense L– CTL Sense L+ Gnd 1 10µF 2 TTL Input (PWM signal) 3 4 5 6 7 Figure 2. Full-Bridge Motor Control Application Synchronous Rectifier Converter The MIC5022 can be part of a synchronous rectifier in SMPS (switch mode power supply) applications. This circuit uses the MIC38C43 SMPS controller IC to switch a pass transistor (Q1) and a “synchronous rectifier” transistor (Q2) using the MIC5022. The MIC38C43 controller switches the transistors at 50kHz. Output regulation is maintained using PWM. When the pass transistor is on, the synchronous rectifier is off and current is forced through the inductor to the output capacitor and load. When the pass transistor is switched off, the synchronous rectifier is switched on allowing current to continue to flow as the inductor returns stored energy. The synchronous rectifier MOSFET has a lower voltage drop than the forward voltage drop across a Schottky diode. This increases converter efficiency which extends battery life in portable equipment. +12V 10k 13k 47k 0.1µF 300k 0.15µF 2 3 3.3k 4 2200pF 1 5 4.7nF 1 4.3k 470µF 25V MIC38C43 Comp VREF FB VDD IS VOUT RT/CT Gnd 2 8 8 7 9 6 7 5 MIC5022 V+ Enable Gate H VPP Input Gate L S L+ S H+ S L– S H– Gnd Fault 0.1µF 13 14 10 11 12 SMP06N06-14 Q1 Q2 5mΩ 70µH VOUT 5V, 8A 1000µF Low ESR 3 10k Figure 3. 50kHz Synchronous Rectifier Converter July 2005 9 MIC5022 MIC5022 Micrel, Inc. Package Information .770 (19.558) MAX PIN 1 .235 (5.969) .215 (5.461) .060 (1.524) .045 (1.143) .310 (7.874) .280 (7.112) .160 MAX (4.064) .080 (1.524) .015 (0.381) .015 (0.381) .008 (0.2032) .160 (4.064) .100 (2.540) .110 (2.794) .090 (2.296) .023 (.5842) .015 (.3810) .400 (10.180) .330 (8.362) .060 (1.524) .045 (1.143) 14-Pin Plastic DIP (N) PIN 1 DIMENSIONS: INCHES (MM) 0.301 (7.645) 0.297 (7.544) 0.027 (0.686) 0.031 (0.787) 0.103 (2.616) 0.050 (1.270) 0.016 (0.046) 0.099 (2.515) TYP TYP 0.094 (2.388) 0.090 (2.286) 0.409 (10.389) 0.405 (10.287) 7° TYP 0.015 R (0.381) 0.015 (0.381) SEATING MIN PLANE 0.297 (7.544) 0.293 (7.442) 0.330 (8.382) 0.326 (8.280) 0.032 (0.813) TYP 0.408 (10.363) 0.404 (10.262) 0.022 (0.559) 0.018 (0.457) 5° TYP 10° TYP 16-Pin Wide SOIC (M) MICREL INC. 2180 FORTUNE DRIVE SAN JOSE, CA 95131 USA TEL + 1 (408) 944-0800 FAX + 1 (408) 474-1000 WEB http://www.micrel.com This information furnished by Micrel in this data sheet is believed to be accurate and reliable. However no responsibility is assumed by Micrel for its use. Micrel reserves the right to change circuitry and specifications at any time without notification to the customer. Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant into the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A Purchaser's use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser's own risk and Purchaser agrees to fully indemnify Micrel for any damages resulting from such use or sale. © 2003 Micrel, Inc. MIC5022 10 July 2005