MICREL MIC5022BN

MIC5022
Micrel, Inc.
MIC5022
Half-Bridge MOSFET Driver
Not Recommended for New Designs
General Description
Features
The MIC5022 half-bridge MOSFET driver is designed to
operate at frequencies up to 100kHz (5kHz PWM for 2%
to 100% duty cycle) and is an ideal choice for high speed
applications such as motor control and SMPS (switch mode
power supplies).
A rising or falling edge on the input results in a current source
pulse or sink pulse on the gate outputs. This output current
pulse can turn on a 2000pF MOSFET in approximately 1µs.
The MIC5022 then supplies a limited current (< 2mA), if
necessary, to maintain the output states.
Two overcurrent comparators with nominal trip voltages of
50mV make the MIC5022 ideal for use with current sensing
MOSFETs. External low value resistors may be used instead
of sensing MOSFETs for more precise overcurrent control.
Optional external capacitors placed on the CTH and CTL pins
may be used to individually control the current shutdown duty
cycles from approximately 20% to <1%. Duty cycles from
20% to about 75% are possible with individual pull-up resistors
from CTL and CTH to VDD. An open collector output provides
a fault indication when either sense input is tripped.
The MIC5022 is available in 16-pin wide SOIC and 14-pin
plastic DIP packages.
Other members of the MIC502x family include the MIC5020
low-side driver and the MIC5021 high-side driver.
•
•
•
•
•
•
•
•
•
•
12V to 36V operation
600ns rise time into 1000pF (high side)
TTL compatible input with internal pull-down resistor
Outputs interlocked to prevent cross conduction
TTL compatible enable
Fault output indication
Individual overcurrent limits
Gate protection
Internal charge pump (high-side)
Current source drive scheme reduces EMI
Applications
• Motor control
• Switch-mode power supplies
Ordering Information
Part Number
Temperature Range
Package
MIC5022BWM
–40°C to +85°C
16-pin Wide SOIC
MIC5022BN
–40°C to +85°C
14-pin Plastic DIP
Typical Application
+12V to +36V
TTL Input
(PWM signal)
1
V DD
10µF
2
3
4
CTH
5
6
CTL
7
MIC5022
VB O O S T
Input
Gate H
Fault
Sense H–
C TH
Sense H+
Enable
Gate L
C TL
Sense L–
Gnd
Sense L+
14
13
2.7nF
12
11
RS 1
10
M
9
8
RS 2
DC Motor Control Application
Micrel, Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 944-0970 • http://www.micrel.com
July 2005
1
MIC5022
MIC5022
Micrel, Inc.
Pin Configuration
1 V DD
V B O O S T 14
1
V DD
NC 16
2 Input
Gate H 13
2
NC
V B O O S T 15
3 Fault
Sense H– 12
3
Input
Gate H 14
4 CTH
Sense H+ 11
4
Fault Sense H– 13
Gate L 10
5
CTH
5 Enable
Sense H+ 12
6 CTL
Sense L– 9
6
Enable
7 Gnd
Sense L+ 8
7
CTL
Sense L– 10
8
Gnd
Sense L+ 9
DIP Package
(N)
Gate L 11
SOIC Package
(WM)
Pin Description
DIP Pin No.
SOIC Pin No.
Pin Name
Supply: +12V to +36V. Decouple with ≥ 10µF capacitor.
1
1
2
3
Input
TTL Compatible Input: Logic high turns the high-side external MOSFET
on and the low-side external MOSFET off. Logic low turns the high-side
external MOSFET off and the low-side external MOSFET on. An internal
pull-down returns an open pin to logic low.
3
4
Fault
4
5
CTH
When either sense voltage exceeds threshold, open collector output is open
circuit for 5µs (tG(ON)), then pulled low for tG(OFF). tG(OFF) is adjustable from
CT.
5
6
Enable
6
7
7
8
Gnd
8
8
Sense L +
Current Sense Comparator (+) Input, Low Side: Connect to source of lowside MOSFET. A built-in offset (nominal 50mV) in conjunction with RSENSE
sets the load overcurrent trip point.
9
10
Sense L –
Current Sense Comparator (–) Input, Low Side: Connect to the negative
side of the low-side sense resistor.
10
11
Gate L
Gate Drive, Low Side: Drives the gate of an external power MOSFET. Also
limits VGS to 15V max. to prevent Gate to Source damage. Will sink and
source current.
11
12
Sense H +
Current Sense Comparator (+) Input, High Side: Connect to source of highside MOSFET. A built-in offset (nominal 50mV) in conjunction with RSENSE
sets the load overcurrent trip point.
12
13
Source H –
Current Sense Comparator (–) Input, High Side: Connect to the negative
side of the high-side sense resistor.
13
14
Gate H
Gate Drive, High Side: Drives the gate of an external power MOSFET. Also
limits VGS to 15V max. to prevent Gate to Source damage. Will sink and
source current.
14
15
VBOOST
Charge Pump Boost Capacitor: A bootstrap capacitor from VBOOST to
the MOSFET source pin supplies charge to quickly enhance the external
MOSFET’s gate .
MIC5022
VDD
Pin Function
CTL
Retry Trimming Capacitor, High Side: Controls the off time (tG(OFF)) of the
overcurrent retry cycle. (Duty cycle adjustment.)
• Open = approx. 20% duty cycle.
• Capacitor to Ground = approx. 20% to < 1% duty cycle.
• Pullup resistor = approx. 20% to approx. 75% duty cycle.
• Ground = maintained shutdown upon overcurrent condition.
Output Enable: Disables operation of the output drivers; active high. An
internal pull-down returns an open pin to logic low.
Retry Trimming Capacitor, Low Side: Same function as CTH.
Circuit Ground
2
July 2005
MIC5022
Micrel, Inc.
Block Diagram
6V Internal Regulator
I1
Fault
CINT
2I1
CTH
VDD
Normal
Sense H+
CHARGE
PUMP
Q1
Sense H–
VB OOS T
1.4V
50mV
15V
ON
Input
OFF
↑ ONE↓ SH O T
10I 2
6V
Gate H
I2
6V
I1
Fault
CINT
2I 1
CTL
Normal
Sense L+
Fault
Q1
Sense L–
50mV
VDD
1.4V
15V
ON
OFF
↑ ONE↓ SH O T
10I2
6V
I2
Gate L
Enable
Transistor Count: 188
Absolute Maximum Ratings
Operating Ratings
Supply Voltage (VDD)................................................... +40V
Input Voltage ...................................................–0.5V to 15V
Sense Differential Voltage .......................................... ±6.5V
Sense + or Sense – to Gnd ...........................–0.5V to +36V
Fault Voltage ............................................................... +36V
Current into Fault ........................................................ 50mA
Timer Voltage (CT) ...................................................... +5.5V
VBOOST Capacitor ..................................................... 0.01µF
Supply Voltage (VDD)..................................... +12V to +36V
Temperature Range
SOIC ...................................................... –40°C to +85°C
PDIP .................................................................... –40°C to +85°C
July 2005
3
MIC5022
MIC5022
Micrel, Inc.
Electrical Characteristics
TA = 25°C, Gnd = 0V, VDD = 12V, Gate CL = 1500pF (IRF540 MOSFET) unless otherwise specificed
Symbol
Parameter
Condition
D.C. Supply Current
Input Threshold
VDD = 12V, Input = 0V
VDD = 12V, Input = 5V
Min
5
mA
6.0
10
mA
2.4
5
mA
VDD = 36V, Input = 5V
3.0
25
mA
1.4
2.0
0.8
0.1
Input = 5V
10
20
40
µA
1.4
2.0
V
tG(ON)
0.1
Fault Output
Saturation Voltage
Fault Current = 1.6mA
Note 1
Fault Output Leakage
Fault = 36V
Current Limit Thresh., Low-Side
Current Limit Thresh., High-Side
Gate On Time, Fixed
V
V
0.8
Enable Hysteresis
Gate On Voltage, Low-Side
Units
2.5
Enable Threshold
Gate On Voltage, High-Side
Max
VDD = 36V, Input = 0V
Input Hysteresis
Input Pull-Down Current
Typ
V
0.15
0.4
V
–1
0.01
+1
µA
Note 2
30
50
70
mV
Note 2
30
50
70
mV
VDD = 12V, Note 3
VDD = 12V, Note 3
16
18
21
V
VDD = 36V, Note 3
46
49
52
V
10
11
VDD = 36V, Note 3
14
15
Sense Differential > 70mV
2
5
10
µs
Sense Differential > 70mV, CT = 0pF
10
20
50
µs
V
18
V
tG(OFF)
Gate Off Time, Adjustable
Note 4
1.4
2.0
µs
tR
Gate Rise Time, High-Side
Note 5
0.8
1.5
µs
tDLH
Gate Turn-On Delay, High-Side
Gate Turn-Off Delay, High-Side
Note 6
1.2
2.0
µs
tF
Gate Fall Time, High-Side
Note 7
0.6
1.5
µs
Gate Turn-On Delay, Low-Side
Note 4
1.7
2.5
µs
tR
Gate Rise Time, Low-Side
Note 8
0.7
1.5
µs
Gate Turn-Off Delay, Low-Side
Note 9
0.5
1.0
µs
Gate Fall Time, Low-Side
Note 10
1.0
1.5
µs
tDHL
tDLH
tDHL
tF
Note 1
Note 2
Note 3
Voltage remains low for time affected by CT.
When using sense MOSFETs, it is recommended that RSENSE < 50Ω. Higher values may affect the sense MOSFET’s current transfer ratio.
DC measurement.
Note 4
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 0V to 2V.
Note 5
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 17V.
Note 6
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 20V (Gate on voltage) to 17V.
Note 7
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 17V to 2V.
Note 8
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 10V.
Note 9
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 15V (Gate on voltage) to 10V.
Note 10 Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 10V to 2V.
MIC5022
4
July 2005
MIC5022
Micrel, Inc.
25
VIN = 0V
20
0
10 15 20 25 30 35 40
VSUPPLY (V)
0.5
0
5
NOTE: INCLUDES PROPAGATION
DELAY & CROSS CONDUCTION
LOCKOUT
10 15 20 25 30 35 40
VSUPPLY (V)
Overcurrent Retry Duty
Cycle vs. Timing Capacitance
25
15
HIGH SIDE
RETRY DUTY CYCLE (%)
20
tON = 5µS
VSUPPLY = 12V
10 NOTE:
tON, tOFF TIME
5 INDEPENDENT
OF VSUPPLY
0
0.1
tO N (µS)
VGATE H = VSUPPLY + 10V
CL = CH = 1500pF
CBOOST = 0.01µF
1
10 100 1000 10000
CTH (pF)
tO N 4V (µS)
1.5
VGATE = VSUPPLY + 4V
C = CH = 1500pF
1.0 CL
BOOST = 0.01µF
0.5
5
5.0
4.5 VGATE H = VSUPPLY + 4V
4.0 CL = CH
V
= 12V
3.5 SUPPLY
3.0
HIGH-SIDE
2.5
2.0
PROP.
1.5
DELAY
1.0
NOTE: INCLUDES PROPAGATION
DELAY & CROSS CONDUCTION
0.5
LOCKOUT
0.0
1x100 1x101 1x102 1x103 1x104 1x105
CGATE (pF)
Overcurrent Retry Duty
Cycle vs. Timing Capacitance
25.0
20.0
tON = 5µS
VSUPPLY = 12V
15.0
LOW SIDE
10.0
80
3.5
10 15 20 25 30 35 40
VSUPPLY (V)
Gate Turn-On/Off Delay vs.
Gate Capacitance
VGATE L = 4V
3.0 CL = CH
VSUPPLY = 12V
2.5
2.0
1.5
LOW-SIDE
NOTE: INCLUDES
PROPAGATION
DELAY & CROSS
CONDUCTION
LOCKOUT
PROP.
DELAY
1.0
1x100 1x101 1x102 1x103 1x104 1x105
CGATE (pF)
100
Input Current vs.
Input Voltage
VSUPPLY = 12V
80
60
40
20
5.0
0.0
0.1
NOTE: INCLUDES PROPAGATION
DELAY & CROSS CONDUCTION
LOCKOUT
0.0
5
10 15 20 25 30 35 40
VSUPPLY (V)
Gate Turn-On/Off Delay vs.
Gate Capacitance
Gate Turn-On Delay vs.
Supply Voltage
RETRY DUTY CYCLE (%)
tO N 10V (µS)
1
10
5
2
1.5
2.0
15
VIN = 5V
Gate Turn-On Delay vs.
Supply Voltage
2.5
tO N (µS)
2.5
Gate to Source Voltage
vs. Supply Voltage
IIN (µA)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
5
Supply Current vs.
Supply Voltage
VG ATE H (V)
ISU PPLY (mA)
Typical Characteristics
1
10 100 1000 10000
CTL (pF)
0
0
5
10
15
VIN (V)
20
25
Sense Threshold vs.
Temperature
VOLTAGE (mV)
70
60
50
40
30
20
-60 -30 0 30 60 90 120 150
TEMPERATURE °C)
(
July 2005
5
MIC5022
MIC5022
Micrel, Inc.
Input
Enable
Gate H
Gate L
Sense H+, H–
Differential
Sense L+, L–
Differential
Fault
TTL (H)
0V
TTL (H)
0V
15V (max.)
Source
15V (max.)
0V
50mV
0V
50mV
0V
Off
On
Timing Diagram 1. Normal Operation
5µs
Input
Enable
Gate H
Gate L
Sense H+, H–
Differential
Sense L+, L–
Differential
Fault
20µs
TTL (H)
0V
TTL (H)
0V
15V (max.)
0V
15V (max.)
0V
50mV
0V
50mV
0V
Off
On
Timing Diagram 2. Overcurrent Fault with Retry
5µs
Input
Enable
Gate H
Gate L
Sense H+, H–
Differential
Sense L+, L–
Differential
Fault
TTL (H)
0V
TTL (H)
0V
15V (max.)
Source
15V (max.)
0V
50mV
0V
50mV
0V
Off
On
Timing Diagram 3. Overcurrent Fault with Maintained Off
MIC5022
6
July 2005
MIC5022
Micrel, Inc.
Functional Description
Refer to the MIC5022 block diagram.
Input
A signal greater than 1.4V (nominal) applied to the MIC5022
INPUT causes gate enhancement on an external MOSFET
connected to GATE H turning the high-side MOSFET on.
At the same time internal logic removes gate enhancement
from an external MOSFET connected to GATE L, turning the
low-side MOSFET off.
An internal pull-down resistor insures that an open INPUT
remains low, keeping the external high-side MOSFET turned
off and the low-side MOSFET turned on.
Enable (Active Low)
A signal greater than 1.4V (nominal) applied to the MIC5022
ENABLE keeps both GATE outputs off. An internal pull-down
resistor insures that the MIC5022 is enabled if the pin is
open.
Gate Outputs
Rapid rise and fall times on the GATE output are possible
because each input state change triggers a one-shot which
activates a high-value current sink (10I2) for a short time.
This draws a high current though a current mirror circuit
causing the output transistors to quickly charge or discharge
the external FET’s gate.
A second current sink continuously draws the lower value
of current used to maintain the gate voltage for the selected
state.
Internal 15V Zener diodes protect the external high-side and
low-side MOSFETs by limiting the gate to source voltage.
Charge Pump (High-Side)
An internal charge pump utilizes an external “boost” capacitor
connected between VBOOST and the source of the external
FET (refer to Typical Application). The boost capacitor stores
charge when the FET is off. As the FET begins to turn on
the voltage on the source side of the capacitor increases
(because it is on the high side of the load) raising the VBOOST
pin voltage. The boost capacitor charge is directed through
the gate pin to quickly charge the FET’s gate to 15V maximum
above VDD. The internal charge pump maintains the gate
voltage by supplying a small current as needed.
Overcurrent Limiting (High or Low-Side)
Current source I1 charges CINT upon power up. An optional
external capacitor connected to CT is kept discharged through
a FET Q1.
A fault condition (> 50mV from SENSE + to SENSE –) causes
the overcurrent comparator to enable current sink 2I1 which
overcomes current source I1 to discharge CINT in about 5µs
time. When CINT is discharged, the INPUT is disabled, the
FAULT output is enabled, and CINT and CT are ready to be
charged. Since the INPUT is disabled the GATE output turns
off.
When the GATE output turns off the FET, the overcurrent
signal is removed from the sense inputs which deactivates
current sink 2I1. This allows CINT and the optional capacitor
connected to CT to recharge. A Schmitt trigger delays the
retry while the capacitor(s) recharge. Retry delay is increased
by connecting a capacitor connected to CT (optional).
The MIC5022’s low-side driver may be used without current
sensing by grounding both SENSE + and SENSE – pins. The
high-side driver may be used without current sensing by connecting SENSE + and SENSE – to the source of the external
high-side MOSFET.
Fault Output
The FAULT output is an open collector transistor. FAULT is
active at approximately the same time the output is disabled
by a fault condition (5µs after an overcurrent condition is
sensed). The FAULT output is open circuit (off) during each
successive retry (5µs).
Typical Full-Bridge Application
+12V to +20V
10µF
TTL Input
(PWM signal)
1
2
3
4
5
6
7
MIC5022
VDD
VBOOST
Input
Gate H
Fault Sense H–
CTH
Sense H+
Enable
Gate L
CTL
Sense L–
Gnd
Sense L+
14
14
13
12
11
10
0.01µF
0.01µF
Load
13
12
11
10
9
9
8
8
MIC5022
VBOOST
VDD
Gate H
Input
Sense H– Fault
Sense H+
Gate L
CTH
Enable
Sense L–
CTL
Sense L+
Gnd
1
10µF
2
TTL Input
(PWM signal)
3
4
5
6
7
Figure 1. Basic Full-Bridge Circuit
July 2005
7
MIC5022
MIC5022
Micrel, Inc.
Applications Information
The MIC5022 MOSFET driver is designed for half-bridge
switching applications where overcurrent limiting and high
speed are required. The MIC5022 can control MOSFETs
that switch voltages up to 36V.
The MIC5022 functionally includes the MIC5020 and MIC5021
with additional circuitry to coordinate the operation of the high
and low-side drivers. Since most output considerations are
similar, refer to the MIC5020 and MIC5021 data sheets for
additional applications information.
Supply Voltage
The MIC5022’s supply input (VDD) is rated up to 36V. The
supply voltage must be equal to or greater than the voltage
applied to the drain of the external N-channel MOSFET.
A 16V minimum supply is recommended to produce continuous on-state, gate drive voltage for standard MOSFETs (10V
nominal gate enhancement).
When the driver is powered from a 12V to 16V supply, a
logic-level MOSFET is recommended (5V nominal gate
enhancement).
PWM operation may produce satisfactory gate enhancement
at lower supply voltages. This occurs when fast switching
repetition makes the boost capacitor a more significant voltage supply than the internal charge pump.
Overcurrent Limiting
Separate high and low-side 50mV comparators are provided
for current sensing. The low level trip point minimizes I2R
losses when a power resistor is used for current sensing.
The adjustable retry feature can be used to handle loads with
high initial currents, such as lamps or heating elements, and
can be adjusted from the CT connection.
CT to ground causes maintained gate drive shutdown following an overcurrent condition.
CT open, or a capacitor to ground, causes automatic retry.
The default duty cycle (CT open) is approximately 20% (the
high side is slightly greater than the low side). Refer to the
typical characteristics when selecting a capacitor for a reduced duty cycle.
CT through a pull-up resistor to VDD increases the duty cycle.
Increasing the duty cycle increases the power dissipation
in the load and MOSFET under a “fault” condition. Circuits
may become unstable at a duty cycle of about 75% or higher,
depending on conditions. Caution: The MIC5022 may be
damaged if the voltage applied to CT exceeds the absolute
maximum voltage rating.
Boost Capacitor Selection
For 12V to 20V operation, the boost capacitor should be
0.01µF; and for 12V to 36V operation, the boost capacitor
should be 2.7nF; both connected between VBOOST and the
MOSFET source. The preferred configuration for 20V to 36V
operation is a 0.01µF capacitor connected between VBOOST
and VDD . Refer to the MIC5021 data sheet for examples.
Do not connect capacitors between VBOOST and the MOSFET
source and between VBOOST and VDD at the same time. Larger
capacitors than specified may damage the MIC5022.
MIC5022
Circuits Without Current Sensing
Current sensing may be omitted by connecting the high-side
SENSE + and SENSE – pins to the source of the MOSFET or the
supply and the low-side SENSE + and SENSE – pins to ground.
Do not connect the high-side sense pins to ground.
Inductive Load Precautions
Circuits controlling inductive loads require precautions when
controlled by the MIC5022. Wire wound resistors, which
are sometimes used to simulate other loads, can also show
significant inductive properties.
Sense Pin Considerations
The sense pins of the MIC5022 are sensitive to negative voltages. If a voltage spike is too negative (below approximately
–0.5V), current will be drawn from functional sections of the
IC resulting in unpredictable circuit behavior or damage.
Resistors and Schottky diodes may be used to protect the
sense pins from the negative spikes. Refer to the MIC5021
data sheet for details.
High-Side Sensing
For the high-side driver, sensing the current on the supply
side of the high-side MOSFET locates the SENSE pins away
from the inductive spike. Refer to the MIC5021 data sheet
for details.
Low-Temperature Operation
As the temperature of the MIC5022AJB (extended temperature range version—no longer available) approaches –55°C,
the driver’s off-state, gate-output offset from ground increases.
If the operating environment of the MIC5022AJB includes
low temperatures (–40°C to –55°C), add an external 2.2MΩ
resistor from gate-to-source or from gate-to-ground. This
assures that the driver’s gate-to-source voltage is far below
the external MOSFET’s gate threshold voltage, forcing the
MOSFET fully off. Refer to the MIC5020 and MIC5021 data
sheets for examples.
The gate-to-source configuration is appropriate for resistive
and inductive loads. This also causes the smallest decrease
in gate output voltage.
The gate-to-ground configuration is appropriate for resistive,
inductive, or capacitive loads. This configuration will de-crease
the gate output voltage slightly more than the gate-to-source
configuration.
Full-Bridge Motor Control
An application for two MIC5022s is the full-bridge motor
control circuit.
Two high or two low-side sense inputs may be used for overcurrent detection. (Low-side sensing is shown in Figure 2).
Sensing at four locations is usually unnecessary.
When switching inductive loads, such as motors, it is desirable
to place the high-side sense inputs on the supply side of the
MOSFETs. The helps prevent the inductive spikes that occur
upon load shutoff from affecting the sense inputs.
8
July 2005
MIC5022
Micrel, Inc.
+12V to +20V
10µF
1
TTL Input
(PWM signal)
2
3
4
5
6
7
MIC5022
VDD
VBOOST
Input
Gate H
Fault Sense H–
CTH
Sense H+
Gate L
Enable
CTL
Sense L–
Gnd
Sense L+
14
14
13
13
12
12
11
0.01µF
0.01µF
M
10
11
10
9
9
RS2
RS1
8
8
MIC5022
VBOOST
VDD
Gate H
Input
Sense H– Fault
Sense H+
Gate L
CTH
Enable
Sense L–
CTL
Sense L+
Gnd
1
10µF
2
TTL Input
(PWM signal)
3
4
5
6
7
Figure 2. Full-Bridge Motor Control Application
Synchronous Rectifier Converter
The MIC5022 can be part of a synchronous rectifier in SMPS
(switch mode power supply) applications.
This circuit uses the MIC38C43 SMPS controller IC to switch
a pass transistor (Q1) and a “synchronous rectifier” transistor
(Q2) using the MIC5022.
The MIC38C43 controller switches the transistors at 50kHz.
Output regulation is maintained using PWM. When the pass
transistor is on, the synchronous rectifier is off and current is
forced through the inductor to the output capacitor and load.
When the pass transistor is switched off, the synchronous
rectifier is switched on allowing current to continue to flow
as the inductor returns stored energy.
The synchronous rectifier MOSFET has a lower voltage drop
than the forward voltage drop across a Schottky diode. This
increases converter efficiency which extends battery life in
portable equipment.
+12V
10k
13k
47k
0.1µF
300k
0.15µF
2
3
3.3k
4
2200pF
1
5
4.7nF 1
4.3k
470µF
25V
MIC38C43
Comp
VREF
FB
VDD
IS
VOUT
RT/CT
Gnd
2
8
8
7
9
6
7
5
MIC5022
V+
Enable
Gate H
VPP
Input
Gate L
S L+
S H+
S L–
S H–
Gnd
Fault
0.1µF
13
14
10
11
12
SMP06N06-14
Q1
Q2
5mΩ
70µH
VOUT
5V, 8A
1000µF
Low ESR
3
10k
Figure 3. 50kHz Synchronous Rectifier Converter
July 2005
9
MIC5022
MIC5022
Micrel, Inc.
Package Information
.770 (19.558) MAX
PIN 1
.235 (5.969)
.215 (5.461)
.060 (1.524)
.045 (1.143)
.310 (7.874)
.280 (7.112)
.160 MAX
(4.064)
.080 (1.524)
.015 (0.381)
.015 (0.381)
.008 (0.2032)
.160 (4.064)
.100 (2.540)
.110 (2.794)
.090 (2.296)
.023 (.5842)
.015 (.3810)
.400 (10.180)
.330 (8.362)
.060 (1.524)
.045 (1.143)
14-Pin Plastic DIP (N)
PIN 1
DIMENSIONS:
INCHES (MM)
0.301 (7.645)
0.297 (7.544)
0.027 (0.686)
0.031 (0.787)
0.103 (2.616)
0.050 (1.270) 0.016 (0.046) 0.099 (2.515)
TYP
TYP
0.094 (2.388)
0.090 (2.286)
0.409 (10.389)
0.405 (10.287)
7°
TYP
0.015
R
(0.381)
0.015
(0.381)
SEATING MIN
PLANE
0.297 (7.544)
0.293 (7.442)
0.330 (8.382)
0.326 (8.280)
0.032 (0.813) TYP
0.408 (10.363)
0.404 (10.262)
0.022 (0.559)
0.018 (0.457)
5°
TYP
10° TYP
16-Pin Wide SOIC (M)
MICREL INC.
2180 FORTUNE DRIVE
SAN JOSE, CA 95131
USA
TEL + 1 (408) 944-0800 FAX + 1 (408) 474-1000 WEB http://www.micrel.com
This information furnished by Micrel in this data sheet is believed to be accurate and reliable. However no responsibility is assumed by Micrel for its use.
Micrel reserves the right to change circuitry and specifications at any time without notification to the customer.
Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can
reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant into
the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A Purchaser's
use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser's own risk and Purchaser agrees to fully indemnify
Micrel for any damages resulting from such use or sale.
© 2003 Micrel, Inc.
MIC5022
10
July 2005