MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o n are is s it is m e: Th tric li Notice parame Som CM800HA-66H PRE HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM800HA-66H ● IC ................................................................... 800A ● VCES ....................................................... 3300V ● Insulated Type ● 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 4 - M8 NUTS 57±0.25 20 57±0.25 E C E CM E C 3 - M4 NUTS C 140 124±0.25 E 40 C G C E CIRCUIT DIAGRAM G 10.35 6 - φ 7 MOUNTING HOLES 10.65 48.8 15 61.5 40 18 LABEL 30 28 5 38 5.2 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Aug.1998 MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o n are is s it is m e: Th tric li Notice parame Som PRE CM800HA-66H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Ratings 3300 ±20 800 1600 800 1600 6940 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 8.24 2.84 ~ 3.43 0.88 ~ 1.08 1.5 (Note 2) (Note 2) Main terminal to Base, AC for 1 minute Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value Unit V V A A A A W °C °C V N·m N·m N·m kg ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 1) trr (Note 1) Qrr (Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. Parameter Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Test conditions Limits Typ — IC = 80mA, VCE = 10V 4.5 6.0 7.5 V VGE = VGES, VCE = 0V Tj = 25°C IC = 800A, VGE = 15V Tj = 125°C — — — — — — — — — — — — — — — — — — 4.40 4.80 86 5 2 6.7 — — — — 3.30 — 200 — — 0.008 0.5 5.72 — — — — — 1.60 2.00 2.50 1.00 4.29 1.20 — 0.018 0.036 — µA VCE = 10V VGE = 0V VCC = 1650V, IC = 800A, VGE = 15V VCC = 1650V, IC = 800A VGE1 = VGE2 = 15V RG = 3.75Ω Resistive load switching operation IE = 800A, VGE = 0V IE = 800A die / dt = –1600A / µs IGBT part FWDi part Case to fin, conductive grease applied (Note 4) Max 10 Unit VCE = VCES, VGE = 0V Min — mA V nF nF nF µC µs µs µs µs V µs µC °C/W °C/W °C/W IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Aug.1998 MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o n are is s it is m e: Th tric li Notice parame Som PRE CM800HA-66H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 1600 1600 VCE=10V 1400 VGE=12V VGE=11V VGE=13V VGE=14V 1200 VGE=15V 1000 VGE=20V 800 VGE=10V 600 VGE=9V 400 200 0 0 1 2 3 4 5 6 VGE=8V VGE=7V 7 8 9 10 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) Tj=25°C 1400 1200 1000 800 600 400 200 0 Tj = 25°C Tj = 125°C 0 2 4 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 8 VGE=15V EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 6 4 2 Tj = 25°C Tj = 125°C 0 0 400 800 1200 1600 COLLECTOR CURRENT IC (A) 2000 104 7 5 3 2 Tj=25°C 103 7 5 3 2 102 7 5 3 2 101 0 1 2 3 4 5 EMITTER-COLLECTOR VOLTAGE VEC (V) Aug.1998