MITSUBISHI HVIGBT MODULES Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 Revision: A CM400HG-130H rd 3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400HG-130H ●IC ……………………… 400 A ●VCES …………………… 6500 V ●High Insulated Type ●1-element in a Pack ●AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Dimensions in mm HVM-1045-A 1 of 8 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol Conditions Item Ratings Unit VCES Collector-emitter voltage VGE = 0 V VGES Gate-emitter voltage VCE = 0 V, Tj = 25 °C 5800 6300 6500 ± 20 DC, Tc = 80 °C (Note 1) Pulse DC (Note 1) Pulse Tc = 25 °C, IGBT part 400 800 400 800 5900 A A A A W 10200 V IC ICM IE IEM Pc Collector current (Note 2) Emitter current Maximum power dissipation (Note 3) Tj = -40 °C Tj = +25 °C Tj = +125 °C Viso Isolation voltage RMS, sinusoidal, f = 60 Hz, t = 1 min. Ve Partial discharge extinction voltage RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC Tj Junction temperature V V 5100 V −40 ~ +150 °C Top Operating temperature −40 ~ +125 °C Tstg Storage temperature −40 ~ +125 °C Tpsc Maximum short circuit pulse width 10 µs VCC =4500V, VCE ≤ VCES, VGE =15V, Tj =125°C ELECTRICAL CHARACTERISTICS Symbol ICES Item Conditions — 7 — 20 60 VCE = 10 V, IC = 40 mA, Tj = 25 °C 5.0 6.0 7.0 V VGE = VGES, VCE = 0 V, Tj = 25 °C -0.5 — 0.5 µA — 82 — nF — 5.0 — nF — 1.4 — nF — 6.6 — µC Tj = 25 °C — 4.50 — Tj = 125 °C — 4.60 — Gate-emitter threshold voltage IGES Gate leakage current Input capacitance Cres Reverse transfer capacitance Unit — VGE(th) Output capacitance Max Tj = 125 °C VCE = VCES, VGE = 0 V Coes Limits Typ Tj = 25 °C Collector cutoff current Cies Min VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25 °C VCC = 3600 V, IC = 400 A mA Qg Total gate charge VCE(sat) Collector-emitter saturation voltage td(on) Turn-on delay time VCC = 3600 V, IC = 400 A — 1.20 — µs Turn-on rise time VGE = ±15 V, RG(on) = 15 Ω — 0.35 — µs — 3.00 — J/P — 8.20 — µs tr Eon(10%) td(off) Turn-on switching energy VGE = ±15 V, Tj = 25 °C (Note 5) (Note 4) IC = 400 A VGE = 15 V Tj = 125 °C, Ls = 150 nH t(IGBT_off) = 60 µs (Note 6) , Inductive load Turn-off delay time tf VCC = 3600 V, IC = 400 A Turn-off fall time VGE = ±15 V, RG(off) = 50 Ω tf2 Turn-off fall time Tj = 125 °C, Ls = 150 nH Eoff(10%) Turn-off switching energy (Note 5) Inductive load VEC Emitter-collector voltage (Note 2) IE = 400 A trr Reverse recovery time (Note 2) Reverse recovery time (Note 2) trr2 Qrr Erec(10%) (Note 4) VGE = 0 V Reverse recovery charge (Note 2) Reverse recovery energy (Note 2), (Note 5) 0.50 — µs 3.10 — µs — 2.70 — J/P Tj = 25 °C — 4.00 — Tj = 125 °C — 3.60 — — 1.00 — µs 2.40 — µs — 740 — µC — 1.40 — J/P VCC = 3600 V, IE = 400 A — VGE = ±15 V, RG(on) = 15 Ω Tj = 125 °C, Ls = 150 nH t(IGBT_off) = 60 µs HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules (Note 6) V , Inductive load HVM-1045-A V 2 of 8 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules THERMAL CHARACTERISTICS Symbol Item Conditions Limits Min Typ Max Unit Rth(j-c)Q Thermal resistance Junction to Case, IGBT part — — 21.0 K/kW Rth(j-c)R Thermal resistance Junction to Case, FWDi part — — 33.0 K/kW Rth(c-s) Contact thermal resistance Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm — 9.0 — K/kW MECHANICAL CHARACTERISTICS Symbol Item Mt Mounting torque Ms Mt Conditions Limits Unit Min Typ Max M8: Main termin als screw 7.0 — 15.0 N·m M6: Mounting scr ew 3.0 — 6.0 N·m M4: Auxiliary terminals screw 1.0 — 3.0 N·m — 1.00 — kg m Mass CTI Comparative tracking index 600 — — — da Clearance 26 — — mm dS Creepag e distance 56 — — mm LP CE Parasitic stray in ductance — 27 — nH RCC’+EE’ Internal lead resistance — 0.19 — mΩ Tc = 25 °C Pulse width and repetition rate should be such that junction temperature (T j) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. t(IGBT_off) definition is shown as follows. Note 1. Note 2. Note 3. Note 4. Note 5. Note 6. IC time t(IGBT_off) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1045-A 3 of 8 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 90%VGE VGE 10%VGE 0 VCC IC 90%IC 90%IC di 50%IC 10%IC 10%VCE 10%VCE VCE td(on) tr ton Eon = t1 ∫ t2 t1 10%IC dt 0 td(off) tf2 ic•vce dt Eoff = t2 t3 t4 ∫ t4 t3 ic•vce dt tf = (0.9ic − 0.1ic) / (di/dt) toff = td(off) + tf Fig. ２ – Definitions of switching times & energies of IGBT part Qrr = – IE (IF) di/dt 0 VEC (VR) trr di ∫ 10%IE Erec = – t6 ∫ 0 ie dt t6 ie•vec dt t5 Irr dt 0 10%VEC trr2 0 t5 t6 Fig. ３ – Definitions of reverse recovery charge & energy of FWDi part HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1045-A 4 of 8 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 800 800 Tj = 125°C VCE = 20V VGE = 20V 600 VGE = 15V VGE = 12V Collector Current [A] Collector Current [A] 600 VGE = 10V 400 VGE = 8V 200 0 400 Tj = 125°C 0 0 2 4 6 8 0 Collector - Emitter Voltage [V] 800 2 4 6 8 10 12 Gate - Emitter Voltage [V] COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 800 VGE = 15V 600 600 Tj = 125°C Tj = 25°C Emitter Current [A] Collector Current [A] Tj = 25°C 200 400 200 400 Tj = 125°C Tj = 25°C 200 0 0 0 2 4 6 8 Collector-Emitter Saturation Voltage [V] HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 0 2 4 6 8 Emitter-Collector Voltage [V] HVM-1045-A 5 of 8 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES cCAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 1000 20 VCE = 3600V, IC = 400A Tj = 25°C Cies Capacitance [nF] 100 10 Coes Cres 1 Gate-Emitter Voltage [V] 15 10 5 0 -5 -10 VGE = 0V, Tj = 25°C f = 100kHz 0 -15 0.1 1 10 0 100 2 Collector-Emitter Voltage [V] 6 8 10 Gate Charge [µC] HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 8 8 VCC = 3600V, VGE = ±15V RG(on) = 15 Ω, RG(off) = 50 Ω Tj = 125°C, Inductive load 6 VCC = 3600V, IC = 400A VGE = ±15V, Tj = 125°C Inductive load 7 Switching Energies [J/P] 7 Switching Energies [J/P] 4 Eon 5 Eoff 4 3 2 Erec 1 6 5 Eon 4 Eoff 3 2 Erec 1 0 0 0 200 400 600 800 1000 Collector Current [A] HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 0 20 40 60 80 100 120 Gate Resistance [Ω] HVM-1045-A 6 of 8 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 100 100 10000 Switching Times [µs] td(off) 10 tf td(on) 1 tr 10 0.1 1000 Irr 1 100 trr 0 10 100 1000 10000 10 100 Collector Current [A] Reverse Recovery Current [A] VCC = 3600V, VGE = ±15V RG(on) = 15 Ω, RG(off) = 50 Ω Tj = 125°C, Inductive load Reverse Recovery Time [µs] VCC = 3600V, VGE = ±15V RG(on) = 15 Ω, RG(off) = 50 Ω Tj = 125°C, Inductive load 10 10000 1000 Emitter Current [A] TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Normalized Transient Thermal impedance 1.2 Rth(j-c)Q = 21 K/kW Rth(j-c)R = 33 K/kW 1 Z 0.8 (t ) = th( j − c ) 0.6 0.4 n ∑ R 1− exp i =1 i − t τ i 1 2 3 4 Ri [K/kW] 0.0059 0.0978 0.6571 0.2392 τi [sec] 0.0002 0.0074 0.0732 0.4488 0.2 0 0.001 0.01 0.1 1 10 Time [s] HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1045-A 7 of 8 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES REVERSE BIAS SAFE OPERATING AREA (RBSOA) SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 10000 1200 VCC ≤ 4500V, VGE = ±15V Tj = 125°C, RG(off) ≥ 50 Ω VCC ≤ 4500V, VGE = ±15V Tj = 125°C, RG(off) ≥ 50 Ω 8000 Collector Current [A] Collector Current [A] 1000 800 600 400 6000 4000 2000 200 0 0 0 2000 4000 6000 8000 Collector-Emitter Voltage [V] 0 2000 4000 6000 8000 Collector-Emitter Voltage [V] FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 1200 Reverse Recovery Current [A] VCC ≤ 4500V, di/dt ≤ 2000A/µs Tj = 125°C 1000 800 600 400 200 0 0 2000 4000 6000 8000 Collector-Emitter Voltage [V] HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1045-A 8 of 8